Stacked carbon nanotube multiple threshold device

Patent metadata

Field	Value
Publication number	US-9837491-B2
Application number	US-201615224480-A
Country	US
Kind code	B2
Filing date	Jul 29, 2016
Priority date	Dec 9, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

A device structure including a gate structure containing a first layer of carbon nanotubes and a second layer of carbon nanotubes. The first and the second layers are stacked vertically. The first and the second layers have carbon nanotubes which have substantially homogeneous electric characteristics within each layer. The carbon nanotubes in the first layer have different electric characteristics than the carbon nanotubes in the second layer, so that the device structure exhibits a multiple threshold behavior when coupled to a voltage source. The disclosure also includes a method for fabricating a multithreshold device structure.

First claim

Having described our invention, what we now claim is as follows:

1. A ternary or higher level of multivalued logic device comprising:
a gate structure containing a first layer of carbon nanotubes and a second layer of carbon nanotubes;
the first and the second layers are stacked vertically and the first and the second layers have carbon nanotubes which have substantially homogeneous electric characteristics within each layer and the carbon nanotubes in the first layer have different electric characteristics than the carbon nanotubes in the second layer; and
the gate structure produces a multiple threshold voltage when coupled to a voltage source and is incorporated in the ternary or higher level of multivalued logic device.

2. The device as recited in claim 1 , wherein the carbon nanotubes are single walled carbon nanotubes and the carbon nanotubes in the first layer have different carbon nanotube diameters than the carbon nanotubes in the second layer, and the carbon nanotube diameters have been selected to achieve a desired threshold voltage.

3. The device as recited in claim 1 , wherein the carbon nanotubes in each layer are chemically doped to achieve a desired threshold voltage.

4. The device as recited in claim 1 , wherein the gate structure further comprises an insulator which sandwiches the carbon nanotubes and isolates the carbon nanotubes from a conductive gate material.

5. The device as recited in claim 4 , wherein each layer of the gate structure is arranged to comprise a first dielectric layer, a layer of carbon nanotubes, a second dielectric layer and a conductive gate layer forming a top gate layer.

6. The device as recited in claim 4 , in which the gate metal surrounds each layer of carbon nanotubes and provides a common gate electrode connection.

7. The device as recited in claim 1 , further comprising a multilevel source electrode which is electrically coupled to a first end of each layer of carbon nanotubes and a multilevel drain electrode which is connected to a second end of each layer of carbon nanotubes, wherein the carbon nanotubes in each layer are arranged in a substantially parallel manner bridging from the multilevel source electrode to the multilevel drain electrode.

8. The device as recited in claim 1 , further comprising:
a third layer of carbon nanotubes and a fourth layer of carbon nanotubes in the gate structure;
wherein the third and the fourth layers are stacked vertically with first and the second layers and the first and the third layers have carbon nanotubes which have substantially homogeneous electric characteristics and the second and the fourth layers have carbon nanotubes which have substantially homogeneous electric characteristics and the carbon nanotubes in the first and third layers have different electric characteristics than the carbon nanotubes in the second and fourth layers.

9. The device as recited in claim 1 , wherein the device is a ternary logic device.

10. The device as recited in claim 1 , wherein the multiple threshold voltage comprises a plurality of threshold voltages, each threshold voltage corresponding to a ternary or higher level of multivalued logic value.

11. The device as recited in claim 1 , wherein each layer of carbon nanotubes has a substantially similar number of carbon nanotubes to control a total resistance of each layer.

12. The device as recited in claim 1 , further comprising:
a third layer of carbon nanotubes in the gate structure;
wherein the third layer is stacked vertically with first and the second layers and the third layer has carbon nanotubes which have substantially homogeneous electric characteristics and third layers has different electric characteristics than the carbon nanotubes in the first and second layers: and
wherein the device is a quaternary device.

13. The device as recited in claim 1 , wherein the electric characteristics for nanotubes in the first and second layers include a set of desired band gap and voltage threshold characteristics for the nanotubes in each respective layer.

14. The device as recited in claim 7 , further comprising a first buried electrode located on a side of the device proximate to the multilevel source electrode and a second buried electrode located on a side of the device proximate to multilevel drain electrode, the first and second buried electrodes for aligning the carbon nanotubes in a fabrication step.

15. The device as recited in claim 1 , wherein current flows in the first and second layers when respective threshold voltages are produced by the gate structure in normal operation of the device.

16. The device as recited in claim 12 , further comprising:
a fourth layer of carbon nanotubes, a fifth layer of carbon nanotubes and a sixth layer of carbon nanotubes in the gate structure;
wherein the fourth, fifth and sixth layers are stacked vertically with the first, second and third layers and the first and the fourth layers have carbon nanotubes which have substantially homogeneous electric characteristics, the second and the fifth layers have carbon nanotubes which have substantially homogeneous electric characteristics and the third and the sixth layers have carbon nanotubes which have substantially homogeneous electric characteristics and the carbon nanotubes in the first and fourth layers have different electric characteristics than the carbon nanotubes in the second and fifth layers and the third and the sixth layers.

17. The device as recited in claim 4 , wherein individual carbon nanotubes in each layer are surrounded by insulator in the gate structure.

18. The device as recited in claim 17 , wherein individual carbon nanotubes in each layer are encased by the multilevel source electrode.

Assignees

• IBM

Inventors

• Rosenblatt Sami
• Topaloglu Rasit O

Classifications

• H01L29/0673 Primary

  Electricity · mapped topic

• Y10S977/938

  Field effect transistors, FETS, with nanowire- or nanotube-channel region · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• Y10S977/75

  Single-walled · CPC title

• H01L29/42392

  Electricity · mapped topic