GaN transistors with polysilicon layers used for creating additional components

Patent metadata

Field	Value
Publication number	US-9837438-B2
Application number	US-201514959710-A
Country	US
Kind code	B2
Filing date	Dec 4, 2015
Priority date	Jul 29, 2013
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.

First claim

What is claimed is:

1. A method of manufacturing an integrated circuit, the method comprising:
forming a gate structure for an enhancement mode device;
depositing a first insulating layer over the gate structure;
depositing a polysilicon layer on the first insulating layer;
doping the polysilicon layer to form at least one p-type region and at least one n-type region in the polysilicon layer;
depositing a second insulating layer on the polysilicon layer;
forming a first interconnect on the second insulating layer and electrically coupled to the n-type region of the polysilicon layer by a first via formed in the second insulating layer, and forming a second interconnect on the second insulating layer and electrically coupled to the p-type region of the polysilicon layer by a second via formed in the second insulating layer.

2. The method according to claim 1 , further comprising:
depositing a channel layer over at least one buffer layer; and
depositing a barrier layer over the channel layer.

3. The method according to claim 2 , wherein the step of forming the gate structure comprises:
depositing a p-type GaN layer over the barrier layer;
depositing a gate metal on the p-type GaN layer;
forming a photoresist over the gate metal; and etching the gate metal and the p-type GaN layer.

4. The method according to claim 3 , further comprising:
etching the first insulating layer to form a pair of contact windows in the first insulating layer on opposite sides of the gate structure;
forming a source metal and a drain metal in the pair of contact windows, respectively; and
connecting the source metal to the first interconnect, and connecting the drain metal to the second interconnect, by respective vias through the second insulating layer.

5. The method according to claim 1 , further comprising:
depositing a third insulating layer on the first metal interconnect and the second interconnect;
forming a plurality of vias in the third insulating layer; and
forming a pair of metal contacts on the third insulating layer and electrically coupled to the plurality of vias.

6. The method according to claim 1 , wherein the step of doping the polysilicon layer further comprises leaving at least one region of the polysilicon layer undoped.

7. The method according to claim 6 , wherein the undoped region of the polysilicon layer is electrically connected to the second interconnect by an additional via.

8. The method according to claim 1 , wherein the first and second interconnects are formed of metal.

Assignees

• Efficient Power Conversion Corp

Inventors

• Cao Jianjun
• Beach Robert
• Lidow Alexander
• Nakata Alana
• Zhao Guangyuan
• Ma Yanping
• Strittmatter Robert
• De Rooij Michael A
• Zhou Chunhua
• Kolluri Seshadri
• Liu Fang-Chang
• Chiang Ming-Kun
• Cao Jiali
• Jauhar Agus

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W10/041

  of isolation regions comprising polycrystalline semiconductor materials · CPC title

• H10W10/40

  Isolation regions comprising polycrystalline semiconductor materials · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title