Semiconductor device

US9837335B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9837335-B2
Application numberUS-201615374478-A
CountryUS
Kind codeB2
Filing dateDec 9, 2016
Priority dateDec 11, 2015
Publication dateDec 5, 2017
Grant dateDec 5, 2017

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Performance of a semiconductor device is improved. Graphene particles are mixedly added in a sealing resin covering a semiconductor chip. The graphene particles are thus mixedly added in the sealing resin, thereby thermal conduction of the sealing resin is improved, and thus radiation performance of the semiconductor device can be improved. Graphene is a sheet of sp 2 bonded carbon atoms having a monolayer thickness. Graphene has a structure where hexagonal lattices, each of which is formed of carbon atoms and bonds of the carbon atoms, are planarly spread. Graphene is preferably used as heat transfer filler because of its high thermal conductivity and light weight.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a semiconductor chip; and a resin material covering the semiconductor chip, the resin material containing a resin and graphene particles, and wherein content of the graphene particles in the resin material is 40 to 70 vol %. 2. The semiconductor device according to claim 1 , wherein particle size of the graphene particles is 10 to 500 μm. 3. The semiconductor device according to claim 1 , wherein the content of the graphene particles in the resin material is 60 to 70 vol %. 4. The semiconductor device according to claim 1 , wherein the resin material contains potassium ion.

Assignees

Inventors

Classifications

  • Multilayered bond wires, e.g. having a coating concentric around a core · CPC title

  • comprising aluminium [Al] · CPC title

  • comprising gold [Au] · CPC title

  • Encapsulations, e.g. protective coatings · CPC title

  • batch processes · CPC title

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Frequently asked questions

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What does patent US9837335B2 cover?
Performance of a semiconductor device is improved. Graphene particles are mixedly added in a sealing resin covering a semiconductor chip. The graphene particles are thus mixedly added in the sealing resin, thereby thermal conduction of the sealing resin is improved, and thus radiation performance of the semiconductor device can be improved. Graphene is a sheet of sp 2 bonded carbon atoms havin…
Who is the assignee on this patent?
Renesas Electronics Corp
What technology area does this patent fall under?
Primary CPC classification H10W74/473. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).