A Transistor and Method of Making
US-2016190293-A1 · Jun 30, 2016 · US
US9837241B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9837241-B2 |
| Application number | US-201615183175-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 15, 2016 |
| Priority date | Aug 25, 2015 |
| Publication date | Dec 5, 2017 |
| Grant date | Dec 5, 2017 |
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A Tera Hertz reflex klystron includes an electron emission unit, a resonant unit and an output unit. The electron emission is used to emit a plurality of electrons. The electron emission unit defines a first opening. The resonant unit comprises a resonant cavity frame. The resonant cavity frame comprises a top wall and a bottom wall and defines a resonant cavity. The top wall and the bottom wall faces with each other. The bottom wall comprises a bottom opening. The top wall comprises a top opening and at least one outputting hole. The bottom opening and the first opening are merged with each other. The output unit being configured to output Tera Hertz waves. The plurality of electrons are transferred to the output unit from the at least one outputting hole.
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What is claimed is: 1. A Tera Hertz reflex klystron, comprising: an electron emission unit being configured to emit a plurality of electrons, the electron emission unit defines a first opening, wherein the electron emission unit comprises a cathode, an electron emitter unit, and an electron injection layer; and the electron emitter unit is electrically connected with the cathode, the electron injection layer defines a hollow space having the first opening, and the electron emitter unit is located in the hollow space; a resonant unit comprising a resonant cavity frame, the resonant cavity frame comprises a top wall and a bottom wall and defining a resonant cavity; the top wall and the bottom wall facing each other; and the bottom wall comprising a bottom opening, the top wall comprising a top opening and at least one outputting hole, and the bottom opening and the first opening are merged with each other; and an output unit being configured to output Tera Hertz waves, and the plurality of electrons are transferred to the output unit from the at least one outputting hole. 2. The Tera Hertz reflex klystron of claim 1 , wherein the first opening, the bottom opening and the top opening are co-axial. 3. The Tera Hertz reflex klystron of claim 1 , wherein at least one outputting hole comprises a plurality of outputting holes arranged orderly, the plurality of outputting holes are central symmetry around a center of the top opening. 4. The Tera Hertz reflex klystron of claim 1 , wherein the electron emission unit further comprises an electron extraction grid, and the electron extraction grid covers the first opening. 5. The Tera Hertz reflex klystron of claim 4 , wherein the electron extraction grid is a carbon nanotube composite layer, a carbon nanotube layer, or a graphene layer. 6. The Tera Hertz reflex klystron of claim 5 , wherein the electron extraction grid is a carbon nanotube composite layer comprising a carbon nanotube layer and a coating layer, and the carbon nanotube composite layer defines a plurality of apertures. 7. The Tera Hertz reflex klystron of claim 1 , further comprising an insulating layer located on a surface of the electron injection layer; and the insulating layer comprises two potions, a first portion of the insulating layer is located between the electron injection layer and the cathode, and a second portion of the insulating layer is located in the hollow space and on an inside surface of the electron injection layer. 8. The Tera Hertz reflex klystron of claim 1 , wherein the hollow space is in a shape of inversed funnel, and the size of hollow space is gradually narrowed along a direction away from the cathode. 9. The Tera Hertz reflex klystron of claim 1 , wherein the electron emitter unit is in a tapered shape with a peak and comprises a plurality of electron emitters, one of the plurality of electron emitters, in a center of the electron emitter unit, is the highest. 10. The Tera Hertz reflex klystron of claim 9 , wherein a height of each of the plurality of electron emitters is gradually decreased along a direction away from the center. 11. The Tera Hertz reflex klystron of claim 1 , wherein the electron emitter unit is a carbon nanotube wire comprising a plurality of carbon nanotubes parallel with each other or twisted with other. 12. The Tera Hertz reflex klystron of claim 1 , wherein the resonant unit further comprises an insulating support, a first grid electrode, a second grid electrode, a reflective room and a reflective electrode; the insulating support is located around the bottom opening; the first grid electrode is located on the insulating support; the second grid electrode covers the top opening; the reflective room covers the top opening and open to the top opening; and the reflective electrode is located in the reflective room. 13. The Tera Hertz reflex klystron of claim 12 , wherein the reflective electrode is located above and faces the second grid electrode. 14. A micro Tera Hertz reflex klystron array, comprising: a substrate; a plurality of first electrodes and a plurality of second electrodes located on the substrate; a plurality of Tera Hertz reflex klystrons electrically connected with the plurality of first electrodes and the plurality of second electrodes; and each Tera Hertz reflex klystron comprises an electron emission unit being configured to emit a plurality of electrons, and the electron emission unit defines a first opening; a resonant unit comprising a resonant cavity frame, the resonant cavity frame comprises a top wall and a bottom wall and defining a resonant cavity; the top wall and the bottom wall faces with each other; the bottom wall comprising a bottom opening; the top wall comprising a top opening and at least one outputting hole; and the bottom opening and the first opening are merged with each other; and an output unit being configured to output Tera Hertz waves, so that the plurality of electrons are transferred to the output unit from the at least one outputting hole. 15. The micro Tera Hertz reflex klystron array of claim 14 , wherein the plurality of first electrodes and the plurality of second electrodes are perpendicular with each other to from a grid structure. 16. The micro Tera Hertz reflex klystron array of claim 15 , wherein the grid structure comprises a plurality of cells, each cell is defined by adjacent first electrodes and adjacent second electrodes, and each Tera Hertz reflex klystrons is located in the cell and electrically connected with one first electrode and one second electrode. 17. The micro Tera Hertz reflex klystron array of claim 14 , wherein the electron emission unit comprises a cathode, an electron emitter unit, and an electron injection layer; and the electron emitter unit is electrically connected with the cathode. 18. The micro Tera Hertz reflex klystron array of claim 17 , wherein the electron injection layer defines a hollow space having the first opening, the electron emitter unit is located in the hollow space. 19. The micro Tera Hertz reflex klystron array of claim 17 , wherein the electron emitter unit has a tapered shape with a peak and comprises a plurality of electron emitters; and one of the plurality of electron emitters, in a center of the electron emitter unit, is the highest. 20. The micro Tera Hertz reflex klystron array of claim 17 , wherein the electron emitter unit is a carbon nanotube wire comprising a plurality of carbon nanotubes parallel with each other or twisted with other.
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