Selecting reversible resistance memory cells based on initial resistance switching

Patent metadata

Field	Value
Publication number	US-9837153-B1
Application number	US-201715468512-A
Country	US
Kind code	B1
Filing date	Mar 24, 2017
Priority date	Mar 24, 2017
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Technology is described for selecting a group of reversible-resistance memory cells in which to store data based on information regarding switching the reversible-resistance memory cells from a first resistance state in which the reversible-resistance memory cells are in immediately after fabrication to a second resistance state for the first time after fabrication. Information regarding switching the reversible-resistance memory cells from the first resistance state to the second resistance state for the first time after fabrication may provide insight into factors including, but not limited to, endurance and data retention. In one aspect, a control circuit is configured to select a group of reversible-resistance memory cells in which to store data based on both the difficulty in switching from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored in the memory system.

First claim

What is claimed is:

1. An apparatus, comprising:
a plurality of reversible-resistance memory cells;
a control circuit in communication with the plurality of reversible-resistance memory cells, the control circuit configured to:
access information regarding switching groups of the reversible-resistance memory cells from a first resistance state in which the reversible-resistance memory cells are in immediately after fabrication to a second resistance state for the first time after fabrication;
select a group of reversible-resistance memory cells to store data based on the information for respective ones of the groups; and
store data in the selected group.

2. The apparatus of claim 1 , wherein the information is based on a difficulty in switching groups of the reversible-resistance memory cells from the first resistance state to the second resistance state for the first time after fabrication.

3. The apparatus of claim 1 , wherein the information is based on a difficulty in forming groups of the reversible-resistance memory cells after fabrication.

4. The apparatus of claim 1 , wherein the information is based on a difficulty in initializing groups of the reversible-resistance memory cells after fabrication.

5. The apparatus of claim 1 , wherein the control circuit is configured to select a group of the reversible-resistance memory cells based on both a difficulty in switching groups of the reversible-resistance memory cells from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored.

6. The apparatus of claim 5 wherein, to select a group based on both the difficulty in switching groups of the reversible-resistance memory cells from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored, the control circuit is configured to:
store data having a first temperature in groups of reversible-resistance memory cells for which switching from the first resistance state to the second resistance state for the first time after fabrication has a first difficulty; and
store data having a second temperature in groups of reversible-resistance memory cells for which switching from the first resistance state to a low resistance state for the first time after fabrication has a second difficulty that is greater than the first difficulty, wherein the second temperature is less than the first temperature.

7. The apparatus of claim 5 wherein, to select a group based on both the difficulty in switching from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored, the control circuit is configured to:
store data having a first temperature in groups of reversible-resistance memory cells for which switching from the first resistance state to the second resistance state for the first time after fabrication has a first difficulty; and
store data having a second temperature in groups of reversible-resistance memory cells for which switching from the first resistance state to the second resistance state for the first time after fabrication has a second difficulty that is greater than the first difficulty, wherein the second temperature is greater than the first temperature.

8. The apparatus of claim 7 wherein, to select a group based on both the difficulty in switching from the first resistance state to the second resistance state for the first time after fabrication and a temperature of the data to be stored, the control circuit is further configured to:
store data having a third temperature in groups of reversible-resistance memory cells for which switching from the first resistance state to the second resistance state for the first time after fabrication has a third difficulty that is greater than both the first and second difficulties, wherein the third temperature is less than the first temperature and less than the second temperature.

9. The apparatus of claim 1 , further comprising storage that stores the indication of difficulty in switching from the first resistance state to the second resistance state for the first time after fabrication, wherein the stored indication is based on how many iterations of a process is used to switch reversible-resistance memory cells in a group from the first resistance state to the second resistance state for the first time after fabrication.

10. A method of operating a non-volatile memory system comprising reversible-resistance memory cells, comprising:
accessing information that characterizes groups of the reversible-resistance memory cells based on how many iterations of a forming procedure were used to form the reversible-resistance memory cells in the respective groups;
selecting a group of the reversible-resistance memory cells based on the information; and
storing data in the selected group.

11. The method of claim 10 , wherein the selecting a group of the reversible-resistance memory cells is based on both the information and a temperature of data to be stored in the memory system.

12. The method of claim 11 , wherein the selecting a group of the reversible-resistance memory cells based on the both the information and a temperature of data to be stored in the memory system comprises:
storing data having a first temperature in groups of the reversible-resistance memory cells for which forming is characterized by a first range of forming iterations; and
storing data having a second temperature in reversible-resistance memory cells for which forming is characterized by a second range of forming iterations that is greater than the first range, wherein the second temperature is less than the first temperature.

13. The method of claim 11 , wherein the selecting a group of the reversible-resistance memory cells based on the both the information and a temperature of data to be stored in the memory system comprises:
storing data having a first temperature in reversible-resistance memory cells for which forming is characterized by a first range of forming iterations; and
storing data having a second temperature in reversible-resistance memory cells for which forming is characterized by a second range of forming iterations that is less than the first range, wherein the second temperature is less than the first temperature.

14. The method of claim 13 , wherein the selecting a group of the reversible-resistance memory cells based on the both the information and a temperature of data to be stored in the memory system further comprises:
storing data having a third temperature in reversible-resistance memory cells for which forming has a third range of forming iterations that is greater than both the first and second ranges, wherein the third temperature is less than the first temperature and less than the second temperature.

15. The method of claim 10 , wherein the selecting a group of the reversible-resistance memory cells based on the information comprises:
performing logical to physical mapping of data to the reversible-resistance memory cells based on the information.

16. The method of claim 10 , wherein the selecting a group of the reversible-resistance memory cells based on the information comprises:
performing wear-leveling of the reversible-resistance memory cells based on the information.

17. A non-volatile memory system, comprising:
a plurality of reversible-resistance memory cells;
means for accessing stored information of difficulty in switching groups of the reversible-resistance memory cells

Assignees

• Western Digital Tech Inc

Inventors

• Rajamohanan Bijesh
• Petti Christopher
• Hu Xinde

Classifications

• G11C13/0069 Primary

  Writing or programming circuits or methods · CPC title

• G11C13/0002

  using resistive RAM [RRAM] elements · CPC title

• G06F12/10

  Address translation · CPC title

• G11C13/0035

  Evaluating degradation, retention or wearout, e.g. by counting writing cycles · CPC title

• G11C2013/0083

  Write to perform initialising, forming process, electro forming or conditioning · CPC title