Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic recording and reproducing device, and method for manufacturing magnetoresistance effect element
US-9214171-B2 · Dec 15, 2015 · US
Magnetoresistive element, method of manufacturing magnetoresistive element, magnetic head, and magnetic recording/reproducing device
US9837105B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9837105-B2 |
| Application number | US-201615200454-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 1, 2016 |
| Priority date | Jul 6, 2015 |
| Publication date | Dec 5, 2017 |
| Grant date | Dec 5, 2017 |
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Abstract
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A magnetoresistive element according to an embodiment includes: a first magnetic layer, a second magnetic layer, and an intermediate layer disposed between the first magnetic layer and the second magnetic layer, the intermediate layer including: a first layer containing oxygen and at least one element of Cu, Au, and Ag; and a second layer containing Mg and oxygen, the second layer being disposed between the first layer and the second magnetic layer.
First claim
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The invention claimed is: 1. A magnetoresistive element comprising a first magnetic layer, a second magnetic layer, and an intermediate layer disposed between the first magnetic layer and the second magnetic layer, the intermediate layer including: a first layer containing oxygen and at least one element of Cu, Au, and Ag; and a second layer containing Mg and oxygen, the second layer being disposed between the first layer and the second magnetic layer. 2. The magnetoresistive element according to claim 1 , wherein the first layer includes: a metal layer containing the at least one of Cu, Au, or Aq; and an oxide layer disposed between the metal layer and the second layer. 3. The magnetoresistive element according to claim 2 , wherein the oxide layer contains Al. 4. The magnetoresistive element according to claim 2 , wherein the metal layer has a thickness between 0.25 nm and 1.5 nm. 5. The magnetoresistive element according to claim 1 , wherein the second magnetic layer includes a magnetic alloy layer containing Ge. 6. The magnetoresistive element according to claim 1 , wherein the second magnetic layer includes at least one of a FeCoGe alloy layer and a FeCoMnGe alloy layer. 7. A magnetic reproducing device comprising: a magnetic recording medium; and a hard disk head comprising the magnetoresistive element according to claim 1 . 8. The device according to claim 7 , further comprising a head stack assembly configured to support the hard disk head. 9. The device according to claim 8 , further comprising a signal processing unit. 10. A magnetoresistive element comprising a first magnetic layer, a second magnetic layer, and an intermediate layer disposed between the first magnetic layer and the second magnetic layer, wherein the intermediate layer includes an oxide layer containing at least one metal element of Cu, Au, and Ag, a nonmagnetic layer containing a nonmagnetic element, and an Mg layer, wherein the metal element has a distribution with a peak on a side of the first magnetic layer, the nonmagnetic element has a distribution with a peak near a middle portion between the first magnetic layer and the second magnetic layer, and the Mg layer has a distribution with a peak on a side of the second magnetic layer. 11. The magnetoresistive element according to claim 10 , wherein the nonmagnetic element is Al. 12. The magnetoresistive element according to claim 10 , wherein the second magnetic layer includes a magnetic alloy layer containing Ge. 13. The magnetoresistive element according to claim 10 , wherein the second magnetic layer includes at least one of a FeCoGe alloy layer and a FeCoMnGe alloy layer.
Assignees
Inventors
Classifications
Electricity · mapped topic
- G11B5/3909Primary
Arrangements using a magnetic tunnel junction · CPC title
comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title
Magnetoresistive devices · CPC title
Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title
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- What does patent US9837105B2 cover?
- A magnetoresistive element according to an embodiment includes: a first magnetic layer, a second magnetic layer, and an intermediate layer disposed between the first magnetic layer and the second magnetic layer, the intermediate layer including: a first layer containing oxygen and at least one element of Cu, Au, and Ag; and a second layer containing Mg and oxygen, the second layer being dispose…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification G11B5/3909. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).