Current detection method of semiconductor device and semiconductor device

Patent metadata

Field	Value
Publication number	US-9835660-B2
Application number	US-201615068929-A
Country	US
Kind code	B2
Filing date	Mar 14, 2016
Priority date	Apr 14, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

A semiconductor device with the highly precise current detecting function is provided. Current detection is performed using a semiconductor device in which two semiconductor chips are mounted in one package. The first semiconductor chip is provided with an electric power supply transistor to supply power to a load via a load driving terminal, and a current detection circuit to detect a current flowing through the load driving terminal. In the inspection process of the semiconductor device, the electrical property of the current detection circuit in the first semiconductor chip is inspected, and the information on a correction equation obtained as the inspection result is written in a memory circuit of the second semiconductor chip. The second semiconductor chip corrects the detection result obtained by the current detection circuit based on the information on the correction equation written in the memory circuit concerned.

First claim

What is claimed is:

1. A current detection method of a semiconductor device comprising a first semiconductor chip and a second semiconductor chip which are mounted in one package, and a load driving terminal, wherein the first semiconductor chip comprises an electric power supply transistor operable to supply power to a load via the load driving terminal, and a current detection circuit operable to detect a current flowing through the load driving terminal, wherein the second semiconductor chip comprises a memory circuit, the method comprising:
in an inspection process of the semiconductor device:
inspecting an electrical property of the current detection circuit in the first semiconductor chip;
writing information on a correction equation obtained on the basis of an inspection result in the memory circuit of the second semiconductor chip; and
correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.

2. The current detection method of the semiconductor device according to claim 1 , wherein the first semiconductor chip further comprises a first terminal,
wherein the current detection circuit comprises a current detection resistor operable to output a voltage reflecting the current flowing through the load driving terminal to the first terminal, and
wherein the second semiconductor chip further comprises:
a second terminal to be coupled to the first terminal;
an analog-to-digital converter circuit operable to convert an analog signal inputted to the second terminal into a digital signal; and
an arithmetic processing circuit operable to process the digital signal.

3. The current detection method of the semiconductor device according to claim 2 , wherein the inspection process of the semiconductor device comprises:
a first process of applying a first current to the load driving terminal and measuring a first voltage outputted to the first terminal;
a second process of applying a second current with a different current value from the first current to the load driving terminal and measuring a second voltage outputted to the first terminal;
a third process of defining the information on the correction equation on the basis of the relation between the difference of the first current and the second current and the difference of the first voltage and the second voltage; and
a fourth process of writing the information on the correction equation to the memory circuit, and
wherein the arithmetic processing circuit calculates the current value of the current flowing through the load driving terminal, by correcting the digital signal with the use of the correction equation.

4. The current detection method of the semiconductor device according to claim 3 , wherein the correction equation is a linear function, and
wherein the information on the correction equation is a coefficient of the linear function.

5. The current detection method of the semiconductor device according to claim 3 , wherein one of the first semiconductor chip and the second semiconductor chip further comprises a temperature sensor circuit operable to output a temperature monitor signal with a value indicative of temperature,
wherein the inspection process of the semiconductor device further comprises:
a fifth process of executing the first process, the second process, and the third process, in the state where the semiconductor device is placed under the environment of a first temperature, to further measure the temperature monitor signal;
a sixth process of executing the first process, the second process, and the third process, in the state where the semiconductor device is placed under the environment of a second temperature different from the first temperature, to further measure the temperature monitor signal;
a seventh process of defining the information on the correction equation including the temperature dependence, on the basis of the information on the correction equation and the measurement result of the temperature monitor signal, obtained in the fifth process, and the information on the correction equation and the measurement result of the temperature monitor signal, obtained in the sixth process; and
an eighth process of writing the information on the correction equation including the temperature dependence to the memory circuit, and

wherein the arithmetic processing circuit calculates the current value of the current flowing through the load driving terminal, by correcting the digital signal with the use of the correction equation according to the temperature monitor signal.

6. The current detection method of the semiconductor device according to claim 5 , wherein the information on the correction equation including the temperature dependence includes a coefficient of a linear function and a temperature coefficient indicative of the temperature dependence of the coefficient of the linear function, and
wherein the arithmetic processing circuit calculates the current value of the current flowing through the load driving terminal, by correcting the coefficient of the linear function on the basis of the temperature monitor signal and the temperature coefficient, and correcting the digital signal with the use of the linear function with the corrected coefficient.

7. The current detection method of the semiconductor device according to claim 3 , wherein the current detection resistor is a variable resistor capable of setting a plurality of values of resistance,
wherein the first semiconductor chip further comprises a third terminal to set the values of resistance,
wherein, in the inspection process of the semiconductor device, the value of resistance of the current detection resistor is set via the third terminal and the first process, the second process, the third process, and the fourth process are executed for each of the values of resistance, and
wherein the arithmetic processing circuit calculates the current value of the current flowing through the load driving terminal, by setting the value of resistance of the current detection resistor via the third terminal, and correcting the digital signal with the use of the correction equation corresponding to the value of resistance of the current detection resistor.

8. The current detection method of the semiconductor device according to claim 3 , wherein wiring to couple the first terminal with the second terminal is provided in the package, and
wherein in the first process and the second process, a prescribed inspection device applies the first current and the second current, and the arithmetic processing circuit measures the first voltage and the second voltage on the basis of the digital signal outputted from the analog-to-digital converter circuit.

9. The current detection method of the semiconductor device according to claim 1 , wherein the semiconductor device is employed in an electronic control unit (ECU) of a vehicle.

10. The current detection method of the semiconductor device according to claim 1 , wherein the current detection circuit comprises a current detection resistor operable to detect a current flowing through the load driving terminal.

11. A semiconductor device comprising:
a first semiconductor chip;
a second semiconductor chip, the first semiconductor chip and the second semiconductor chip being mounted in one package; and
a load driving terminal,
wherein the first semiconductor chip comprises:
an electric power supply transistor operable to supply power to a load via the load driving terminal;
a driver circuit operable to drive the electric power supply transistor;
a first terminal; and
a current detection resist

Assignees

• Renesas Electronics Corp

Inventors

• Soma Osamu
• Uemura Akira
• Amada Kenji

Classifications

• G01R1/203

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• G01R19/32 Primary

  Compensating for temperature change · CPC title

• G01R15/09

  Autoranging circuits · CPC title