Semiconductor integrated circuit device and electronic device for driving a power semiconductor device

Patent metadata

Field	Value
Publication number	US-9835658-B2
Application number	US-201615216859-A
Country	US
Kind code	B2
Filing date	Jul 22, 2016
Priority date	Sep 2, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.

First claim

What is claimed is:

1. A semiconductor integrated circuit device comprising:
a driving circuit configured to drive a power semiconductor device;
a driving capability control circuit configured to control a driving capability of the driving circuit; and
a current detection circuit configured to receive a sense current of the power semiconductor device and output a first control signal to the driving circuit and a second control signal, separate from the first control signal, to the driving capability control circuit,
wherein the driving circuit is further configured to receive the first control signal and stop the driving of the power semiconductor device based on the first control signal, and
wherein the driving capability control circuit is further configured to receive the second control signal and control the driving capability of the driving circuit based on the second control signal.

2. The semiconductor integrated circuit device according to claim 1 , wherein the current detection circuit comprises:
a first current detection circuit configured to receive the sense current and output an abnormal-current detection voltage as the first control signal based on the sense current of the power semiconductor device, and
a second current detection circuit configured to receive the sense current and output a normal-current detection voltage as the second control signal based on the sense current of the power semiconductor device.

3. The semiconductor integrated circuit device according to claim 2 , wherein the driving capability control circuit comprises:
a circuit generating a voltage based on the normal-current detection voltage, and
a control circuit controlling, based on the generated voltage, a voltage or a current of the driving circuit.

4. The semiconductor integrated circuit device according to claim 3 , wherein the circuit includes an amplification circuit having an operational amplifier and a loop resistor, and a circuit generating a reference voltage, and
wherein a resistance value of the loop resistor or the reference voltage is changeable based on a third control signal.

5. The semiconductor integrated circuit device according to claim 4 , further comprising:
an A/D conversion circuit that converts the normal-current detection voltage,
a terminal that outputs an output of the A/D conversion circuit, and
a terminal to which the third control signal generated based on the output of the A/D conversion circuit is input.

6. The semiconductor integrated circuit device according to claim 1 , further comprising
a first terminal to be coupled to a terminal that outputs the sense current from which an abnormal current of the power semiconductor device is detected, and
a second terminal to be coupled to a terminal that outputs the sense current from which a normal current is detected.

7. The semiconductor integrated circuit device according to claim 6 ,
wherein a resistor for detecting the abnormal current of the power semiconductor device is coupled to an outside so that the first terminal is configured to receive an abnormal-current detection voltage, and
wherein a resistor for detecting the normal current of the power semiconductor device is coupled to the outside so that the second terminal is configured to receive a normal-current detection voltage.

8. The semiconductor integrated circuit device according to claim 7 ,
wherein the driving capability control circuit includes
a circuit generating a voltage based on the normal-current detection voltage, and
a control circuit controlling, based on the generated voltage, a voltage or a current of the driving circuit.

9. The semiconductor integrated circuit device according to claim 1 , wherein the current detection circuit simultaneously outputs the first control signal and the second control signal.

10. The semiconductor integrated circuit device according to claim 1 , wherein the driving capability control circuit is further configured to vary the driving capability of the driving circuit based on the second control signal, while the driving circuit drives the power semiconductor device based on the first control signal.

11. A semiconductor integrated circuit device comprising:
a driving circuit that drives a power semiconductor device; and
a driving capability control circuit that controls a driving capability of the driving circuit, wherein the driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device, and wherein the driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device;
a first current detection circuit that outputs an abnormal-current detection voltage based on the sense current of the power semiconductor device; and
a second current detection circuit that outputs a normal-current detection voltage based on the sense current of the power semiconductor device,
wherein the first current detection circuit and the second current detection circuit are respectively formed by a current mirror circuit, and
wherein a first resistor is coupled to a first terminal of the current mirror circuit for detecting the abnormal current of the power semiconductor device to an outside and a second resistor is coupled to a second terminal of the current mirror circuit for detecting the normal current of the power semiconductor device to the outside are provided.

12. An electronic device comprising:
a power semiconductor device;
a first semiconductor integrated circuit device; and
a second semiconductor integrated circuit device,
wherein the first semiconductor integrated circuit device comprises:
a driving circuit configured to drive the power semiconductor device;
a driving capability control circuit configured to control a driving capability of the driving circuit; and
a current detection circuit configured to receive a sense current of the power semiconductor device and output a first control signal to the driving circuit and a second control signal, separate from the first control signal, to the driving capability control circuit,
wherein the driving circuit is further configured to receive the first control signal and stop the driving of the power semiconductor device based on the first control signal, and
wherein the driving capability control circuit is further configured to receive the second control signal and control the driving capability of the driving circuit based on the second control signal.

13. The electronic device according to claim 12 ,
wherein the power semiconductor device comprises:
a first terminal that supplies a current for driving a load, and
a second terminal that supplies a current for monitoring a driving current, and

wherein the current detection circuit of the first semiconductor integrated circuit device comprises:
a first current detection circuit configured to receive the sense current and output an abnormal-current detection voltage as the first control signal based on the current from the second terminal, and
a second current detection circuit configured to receive the sense current and output a normal-current detection voltage as the second control signal based on the current from the second terminal.

14. The electronic device according to claim 13 ,
wherein the first semiconductor integrated circuit device comprises:
a fourth terminal coupling a first resistor for detecting an abnormal current of the power semiconductor device to an outside, and
a fifth terminal coupling a seco

Assignees

• Renesas Electronics Corp

Inventors

• Tsurumaru Makoto

Classifications

• B60L3/12

  Recording operating variables {; Monitoring of operating variables} · CPC title

• B60L3/0061

  relating to electrical machines · CPC title

• H02P27/08 Primary

  with pulse width modulation · CPC title

• B60L7/14

  for vehicles propelled by AC motors · CPC title

• Y02T10/7005

  Cross-Sectional Technologies · mapped topic