Chemical Mechanical Polishing (CMP) of Colbalt-Containing Substrate
US-2016027657-A1 · Jan 28, 2016 · US
Cobalt dishing control agents
US9834704B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9834704-B2 |
| Application number | US-201514919490-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 21, 2015 |
| Priority date | Oct 21, 2014 |
| Publication date | Dec 5, 2017 |
| Grant date | Dec 5, 2017 |
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- Title
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Abstract
Official abstract text for this publication.
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C 13 -C 20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.
First claim
Opening claim text (preview).
The invention claimed is: 1. A chemical-mechanical polishing composition comprising: (a) abrasive particles, (b) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor has the formula: RCON(CH3)CH2COOH wherein R is a C 8 -C 13 aliphatic group, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent has the formula: RCON(CH3)CH2COOH wherein R is a C 15 -C 17 aliphatic group, or is a C 16 -C 18 alkyl diphenyloxide disulfonate, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. 2. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 2 wt. % of abrasive particles. 3. The polishing composition of claim 1 , wherein the polishing composition comprises about 50 ppm to about 1000 ppm of the cobalt corrosion inhibitor. 4. The polishing composition of claim 1 , wherein the cobalt dishing control agent comprises an anionic head group and a C 15 -C 18 aliphatic tail group. 5. The polishing composition of claim 1 , wherein the polishing composition comprises about 5 ppm to about 100 ppm of the cobalt dishing control agent. 6. The polishing composition of claim 1 , wherein the polishing composition further comprises a cobalt accelerator, wherein the accelerator is iminodiacetic acid. 7. The polishing composition of claim 1 , wherein the oxidizing agent is hydrogen peroxide.
Assignees
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Classifications
of conductive or resistive materials · CPC title
Electricity · mapped topic
characterised by the composition of the lapping agent · CPC title
- C09G1/02Primary
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
of semiconductor materials · CPC title
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- What does patent US9834704B2 cover?
- The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C 13 -C 20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about …
- Who is the assignee on this patent?
- Cabot Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification C09G1/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).