Porous graphene member, method for manufacturing same, and apparatus for manufacturing same using the method

Patent metadata

Field	Value
Publication number	US-9834445-B2
Application number	US-201514953965-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	Nov 30, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Disclosed are a porous graphene member having through-holes formed therein, a method for manufacturing the porous graphene member, and an apparatus for manufacturing the porous graphene member using the method. The method comprises: introducing a carbon source and a substitution reaction source into a deposition furnace; thermally decomposing the carbon source and the substitution reaction source simultaneously to generate carbon atoms and substitution atoms, respectively, wherein the carbon atoms are deposited on a substrate present within the deposition furnace to form a graphene film consisting of a monoatomic layer structure, and during the deposition of carbon atoms, the substitution atoms not only interfere with covalent bonds between the carbon atoms to cause crystal defects, but also substitute for parts of the carbon atoms to in situ form through-holes in the graphene, thereby creating the porous graphene member; and releasing the porous graphene member from the substrate.

First claim

What is claimed is:

1. A method for manufacturing a porous graphene member, comprising:
introducing a carbon source and a substitution reaction source comprising pyridine(C 5 H 5 N) as a nitrogen precursor for forming through-holes in graphene into a deposition furnace;
thermally decomposing the carbon source and the substitution reaction source simultaneously to generate carbon atoms and substitution atoms, respectively, wherein the carbon atoms are deposited on a substrate present within the deposition furnace to form a graphene film consisting of a monoatomic layer structure, and during the deposition of carbon atoms, the substitution atoms not only interfere with covalent bonds between the carbon atoms to cause crystal defects, but also substitute for parts of the carbon atoms to in situ form through-holes in the graphene, thereby creating the porous graphene member; and
releasing the porous graphene member from the substrate.

2. The method of claim 1 , wherein the substrate comprises at least one selected from among a copper plate and a copper-plated plate, both of which can prevent the monoatomic carbon layer from being thermally deformed and can allow the porous graphene member to be easily released therefrom.

3. The method of claim 1 , wherein the method further comprises separately vaporizing the carbon source and the substitution reaction source at same time prior to introducing the carbon source and the substitution reaction source into the deposition furnace wherein the vaporized carbon source and the vaporized substitution reaction source are transmitted into the deposition furnace by a carrier gas.

4. The method of claim 3 , wherein the carbon source contains a carbon precursor including a hydrocarbon and the substitution reaction source contains a nitrogen precursor including a nitrogen compound.

5. The method of claim 1 , wherein the carbon source and the substitution reaction source are introduced into the deposition furnace via respective pipes.

6. The method of claim 1 , wherein the carbon source and the substitution reaction source are introduced into the deposition furnace through a common pipe where the carbon source and the substitution reaction source are mixed.

7. The method of claim 1 , wherein the carbon source contains at least one selected from the group consisting of methane (CH 4 ), methanol (CH 3 OH), carbon monoxide (CO), ethane (C 2 H 6 ), ethylene (C 2 H 4 ), ethanol (C 2 H 5 OH), acetylene (C 2 H 2 ), acetone (CH 3 COCH 3 ), propane (C 3 H 8 ), propylene (C 3 H 6 ), butane (C 4 H 10 ), pentane (C 5 H 12 ), pentene (C 5 H 10 ), cyclopentadiene (C 5 H 6 ), hexane (C 6 H 14 ), cyclohexane (C 6 H 12 ), benzene (C 6 H 6 ), toluene (C 7 H 8 ), and xylene (C 8 H 10 ).

Assignees

• Korea Inst Energy Res

Inventors

• Kim Hee-Yeon
• Kwon Guk-Hyeon

Classifications

• C01B2204/26

  Mechanical properties · CPC title

• C01B2204/02

  Single layer graphene · CPC title

• B01J19/247

  Suited for forming thin films · CPC title

• C01B32/186 Primary

  by chemical vapour deposition [CVD] · CPC title

• C01B31/0453 Primary

  Chemistry & Metallurgy · mapped topic