Directly modulated laser for PON application

Patent metadata

Field	Value
Publication number	US-9831631-B2
Application number	US-201514737026-A
Country	US
Kind code	B2
Filing date	Jun 11, 2015
Priority date	May 17, 2012
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

In an embodiment, a laser includes a gain section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm.

First claim

What is claimed is:

1. A laser comprising:
a gain section comprising:
an active region;
an upper separate confinement heterostructure (SCH) above the active region having a thickness of at least 60 nanometers (nm); and
a lower SCH below the active region having a thickness of at least 60 nm; and

a gain electrode coupled to the gain section and configured to be coupled to a direct modulation source that is configured to provide a modulation signal having a data rate of about 10 gigabits per second or higher;
wherein in response to application of the modulation signal to the gain electrode, the laser is configured to generate an optical signal having a frequency modulation profile exhibiting both transient chirp and adiabatic chirp, and a ratio of transient chirp to adiabatic chirp is in a range from 1:3 to 1:4.

2. The laser of claim 1 , wherein the modulation signal applied to the gain section has a modulation swing of at least 40 milliamps peak-to-peak (mApp).

3. The laser of claim 2 , wherein the gain section has a length of 300 micrometers (μm) or less.

4. The laser of claim 3 , wherein the modulation signal applied to the gain section has a modulation swing of about 60 mApp and the gain section has a length of about 200 μm.

5. The laser of claim 1 , wherein the laser has a reach of 21 kilometers or more with a bit error rate of about 1×10−3.

6. The laser of claim 1 , wherein the thickness of the upper SCH is less than 125 nm and the thickness of the lower SCH is less than 125 nm.

7. The laser of claim 1 , wherein the laser comprises a distributed Bragg reflector (DBR) laser and the DBR laser is tuned toward a long wavelength side of a Bragg peak associated with the DBR laser.

8. The laser of claim 1 , wherein the laser comprises a distributed Bragg reflector (DBR) laser and the DBR laser comprises a front DBR laser in which a passive section of the DBR laser is positioned between the gain section and a front side of the front DBR laser having an antireflection (AR) coating.

9. The laser of claim 1 , wherein the laser comprises a distributed Bragg reflector (DBR) laser and the DBR laser comprises a rear DBR laser in which the gain section is positioned between a passive section of the DBR laser and a front side of the rear DBR laser having an antireflection (AR) coating.

10. The laser of claim 1 , further comprising a passive section coupled to the gain section, the passive section comprising a Bragg filter in optical communication with the active region such that the laser comprises a distributed Bragg reflector (DBR) laser, wherein:
the passive section comprises a first passive section;
the Bragg filter comprises a first Bragg filter;
the DBR laser further comprises a second passive section including a second Bragg filter in optical communication with the active region; and
the gain section is positioned between the first passive section and the second passive section such that the DBR laser comprises a front/rear DBR laser.

11. The laser of claim 1 , wherein a relaxation oscillation frequency of the laser is at least 12 gigahertz (GHz) and a damping caused by carrier transport effect in the gain section is at least 12 GHz.

12. The laser of claim 11 , wherein the relaxation oscillation frequency of the laser is at least 16 GHz.

13. The laser of claim 1 , wherein:
the thickness of the upper SCH is about 100 nanometers (nm);
the thickness of the lower SCH is about 100 nm; and
a K factor of the laser is 0.32 nanoseconds (ns).

14. An optical transmitter comprising:
a direct modulation source;
a high-pass electrical filter coupled to the direct modulation source, the high-pass electrical filter having a time constant on the order of 1 nanosecond (ns); and
a laser coupled to the high-pass electrical filter, the laser comprising:
a gain section including:
an active region;
an upper separate confinement heterostructure (SCH) above the active region having a thickness of at least 60 nanometers (nm); and
a lower SCH below the active region having a thickness of at least 60 nm.

15. The optical transmitter of claim 14 , wherein the high-pass electrical filter comprises a capacitor coupled in parallel with a first resistor, the parallel-coupled capacitor and first resistor being coupled in series with a second resistor.

16. The optical transmitter of claim 15 , wherein the capacitor has a capacitance of about 50 picofarads (pF), the first resistor has a resistance of about 15 Ohms (Ω), and the second resistor has a resistance of about 45 Ω.

17. The optical transmitter of claim 14 , wherein:
the thickness of the upper SCH is about 125 nanometers (nm);
the thickness of the lower SCH is about 125 nm; and
a K factor of the laser is 0.34 nanoseconds (ns).

18. The optical transmitter of claim 14 , wherein the gain section is biased with a relatively high bias current density of at least 0.2 milliamps (mA) per micrometer (μm).

19. A laser comprising:
a gain section comprising:
an active region;
an upper separate confinement heterostructure (SCH) above the active region having a thickness of at least 60 nanometers (nm); and
a lower SCH below the active region having a thickness of at least 60 nm; and

a gain electrode coupled to the gain section and configured to be coupled to a direct modulation source that is configured to provide a modulation signal having a data rate of about 10 gigabits per second or higher;
wherein a relaxation oscillation frequency of the laser is at least 12 gigahertz (GHz) and a damping caused by carrier transport effect in the gain section is at least 12 GHz.

Assignees

• Finisar Corp

Inventors

• Matsui Yasuhiro

Classifications

• H01S5/06226

  Modulation at ultra-high frequencies · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• H01S5/026

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/3416

  tunneling through barriers · CPC title

• H01S5/0265

  Intensity modulators (intra-cavity modulators H01S5/0625) · CPC title