Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9831309-B2
Application number	US-201615017818-A
Country	US
Kind code	B2
Filing date	Feb 8, 2016
Priority date	Feb 11, 2015
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A miniaturized transistor having highly stable electrical characteristics is provided. Furthermore, high performance and high reliability of a semiconductor device including the transistor is achieved. The transistor includes a first electrode, a second electrode, a third electrode, an oxide semiconductor layer, a first insulating layer, and a second insulating layer. The transistor includes a first region and a second region surrounded by the first region. In the first region, the first insulating layer, the second electrode, the oxide semiconductor layer, and the second insulating layer are stacked. In the second region, the first electrode, the oxide semiconductor layer, the second insulating layer, and the third electrode are stacked.

First claim

The invention claimed is:

1. A semiconductor device comprising a transistor, the transistor comprising:
a first electrode;
a second electrode comprising a first opening;
a third electrode;
an oxide semiconductor layer;
a first insulating layer comprising a second opening; and
a second insulating layer,
wherein the first opening and the second opening overlap each other,
wherein the oxide semiconductor layer is in contact with the first electrode through the first opening and the second opening,
wherein the transistor includes a first region overlapping with the second electrode and a second region overlapping with the first opening and the second opening,
wherein in the first region, the first insulating layer, the second electrode, the oxide semiconductor layer, and the second insulating layer are stacked, and
wherein in the second region, the first electrode, the oxide semiconductor layer, the second insulating layer, and the third electrode are stacked.

2. A semiconductor device comprising a transistor, the transistor comprising:
a first electrode;
a second electrode;
a third electrode;
an oxide semiconductor layer;
a first insulating layer; and
a second insulating layer,
wherein the second electrode and the first insulating layer have an opening,
wherein a side surface and a bottom surface of the third electrode are covered with the second insulating layer, and
wherein the third electrode is embedded in the opening.

3. The semiconductor device according to claim 1 , wherein the first insulating layer contains oxygen.

4. The semiconductor device according to claim 1 ,
wherein the first electrode functions as one of a source electrode and a drain electrode, and
wherein the second electrode functions as the other of the source electrode and the drain electrode.

5. An electronic device comprising the semiconductor device according to claim 1 .

6. The semiconductor device according to claim 2 , wherein the first insulating layer contains oxygen.

7. The semiconductor device according to claim 2 ,
wherein the first electrode functions as one of a source electrode and a drain electrode, and
wherein the second electrode functions as the other of the source electrode and the drain electrode.

8. An electronic device comprising the semiconductor device according to claim 2 .

9. A semiconductor device comprising a transistor, the transistor comprising:
a first electrode;
a first insulating layer over the first electrode, the first insulating layer comprising a first opening;
a second electrode over the first insulating layer, the second electrode comprising a second opening;
an oxide semiconductor layer over the second electrode and the first electrode, the oxide semiconductor layer being in contact with the first electrode through the first opening and the second opening;
a second insulating layer over the oxide semiconductor layer, the second insulating layer overlapping the first opening and the second opening; and
a third electrode over the second insulating layer, the third electrode overlapping the first opening and the second opening.

10. The semiconductor device according to claim 9 , wherein the first insulating layer contains oxygen.

11. The semiconductor device according to claim 9 ,
wherein the first electrode functions as one of a source electrode and a drain electrode, and
wherein the second electrode functions as the other of the source electrode and the drain electrode.

12. An electronic device comprising the semiconductor device according to claim 9 .

Assignees

• Semiconductor Energy Lab

Inventors

• Miyairi Hidekazu

Classifications

• H01L29/4236

  Electricity · mapped topic

• H01L27/11582

  Electricity · mapped topic

• H01L27/11553

  Electricity · mapped topic

• H01L27/11556

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic