Systems and methods for imaging using single photon avalanche diodes

US9831283B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9831283-B2
Application numberUS-201414247983-A
CountryUS
Kind codeB2
Filing dateApr 8, 2014
Priority dateOct 31, 2011
Publication dateNov 28, 2017
Grant dateNov 28, 2017

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Abstract

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Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom.

First claim

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What is claimed is: 1. A single-photon avalanche diode comprising: a central junction including a central p+ area and a deep-n well in contact with the central p+ area; a p-type guard ring disposed between the central junction and the deep-n well, at least partially in contact with the central junction; and a plurality of shallow trench isolations separated from the central p+ area, wherein the p-type guard ring is in contact with a single shallow trench isolation from the plurality of shallow trench isolations proximal to the central junction. 2. The single-photon avalanche diode of claim 1 , further comprising a photosensitive area disposed proximate to the surface of the diode. 3. The single-photon avalanche diode of claim 2 , wherein the photosensitive area has an octagonal shape. 4. The single-photon avalanche diode of claim 1 , wherein the guard ring is configured to substantially surround the p+ area. 5. The single-photon avalanche diode of claim 1 , wherein the guard ring is disposed between the p+ area and the shallow trench isolation. 6. The single-photon avalanche diode of claim 5 , wherein the guard ring is adjacent the p+ area and the shallow trench isolation. 7. An imaging apparatus, comprising: a plurality of pixels, each pixel comprising: a complementary metal-oxide-semiconductor-implemented single photon avalanche diode, the single photon avalanche diode comprising a central junction including a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, at least partially in contact with the central junction, and a plurality of shallow trench isolations separated from the central p+ area, wherein the p-type guard ring is in contact with a single shallow trench isolation from the plurality of shallow trench isolations proximal to the central junction; and one or more signal converters electrically coupled to the diode and configured to detect changes in output therefrom. 8. The apparatus of claim 7 , wherein the one or more signal converters comprise delay-locked loop-based time-to-digital converters. 9. The apparatus of claim 7 , each single photon avalanche diode further comprising a quenching circuit and a resetting circuit connected in series with the single photon avalanche diode. 10. The apparatus of claim 9 , wherein the quenching circuit further comprises a resistive component. 11. The apparatus of claim 10 , wherein the resistive component further comprises a variable resistor. 12. The apparatus of claim 10 , wherein the resistive component further comprises a resistor. 13. The apparatus of claim 9 , wherein the single photon avalanche diodes are arranged in an array. 14. The apparatus of claim 13 , wherein the array further comprises a two-dimensional 64 * 64 array. 15. The apparatus of claim 13 , wherein the array further comprises a two-dimensional 128 * 128 array. 16. The apparatus of claim 9 , wherein the signal converters are further coupled to a processor configured to compress data. 17. The apparatus of claim 9 , wherein the apparatus is configured to detect a signal categorized as a non-homogeneous Poisson process. 18. The apparatus of claim 9 , further comprising a C-mount adapter disposed proximate to the surface of the apparatus, enabling it to connect to a microscope. 19. The apparatus of claim 7 , wherein the resetting circuit further comprises an active resetting circuit. 20. A laser scanning microscopy system comprising the imaging apparatus of claim 7 . 21. A two-photon microscopy system comprising the imaging apparatus of claim 7 . 22. An endoscopic imaging system comprising the imaging apparatus of claim 7 .

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What does patent US9831283B2 cover?
Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor…
Who is the assignee on this patent?
Univ Columbia
What technology area does this patent fall under?
Primary CPC classification H01L27/14643. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 28 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).