Solid-state image sensor and camera with pixel openings

Patent metadata

Field	Value
Publication number	US-9831278-B2
Application number	US-201614996774-A
Country	US
Kind code	B2
Filing date	Jan 15, 2016
Priority date	Jan 26, 2015
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

First claim

What is claimed is:

1. A solid-state image sensor comprising a plurality of pixels for focus detection, each of the pixels plurality of pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter,
wherein a face in each of the plurality of pixels, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion,
wherein the light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening, and
wherein the second opening is larger in area than the light blocking portion, and the light blocking portion is larger in area than the first opening.

2. The sensor according to claim 1 , wherein when d is a shortest distance between the first opening and the second opening, and w is a width of a condensed spot formed on the face through the microlens, w≦d≦3w is satisfied.

3. The sensor according to claim 1 , further comprising:
an insulating film arranged between the microlens and the semiconductor substrate; and
a color filter arranged between the insulating film and the microlens,
wherein the light blocking portion is arranged in the insulating film.

4. The sensor according to claim 3 , further comprising a wiring layer between the face and the microlens in the insulating film.

5. The sensor according to claim 1 , wherein each of the plurality of pixels further includes a transfer gate that forms a channel for transferring charges generated in the photoelectric converter, and
the separator is arranged to cover part of the transfer gate.

6. The sensor according to claim 5 , wherein a boundary line between the second opening and the light blocking portion is perpendicular to a direction of length of the channel.

7. The sensor according to claim 1 , wherein the plurality of pixels include pixels for which the respective light blocking portions are of different shapes in accordance with positions at which the pixels are arranged.

8. The sensor according to claim 1 , wherein a contact plug is arranged in the first opening.

9. A camera comprising:
a solid-state image sensor including a plurality of pixels for focus detection; and
a processor configured to process a signal output from the solid-state image sensor,
wherein each of the plurality of pixels includes a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter,
wherein a face in each of the plurality of pixels, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion,
wherein the light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening, and
wherein the second opening is larger in area than the light blocking portion, and the light blocking portion is larger in area than the first opening.

10. A solid-state image sensor comprising a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, a light blocking portion arranged between the semiconductor substrate and the microlens, and a transfer transistor configured to transfer charges generated in the photoelectric converter,
wherein the photoelectric converter includes a first region overlapping with the light blocking portion, a second region not overlapping with the light blocking portion, and a third region not overlapping with the light blocking portion,
wherein the second region and the third region are separated from each other by the first region,
wherein the third region is larger in area than the second region, and
wherein the light blocking portion overlaps with a gate of the transfer transistor.

11. The sensor according to claim 10 , wherein an area of the first region is smaller than a sum of an area of the second region and an area of the third region.

12. The sensor according to claim 10 , wherein the first region is smaller in area than the third region.

13. The sensor according to claim 10 , further comprising:
an insulating film arranged between the microlens and the semiconductor substrate; and
a color filter arranged between the insulating film and the microlens,
wherein the light blocking portion is arranged in the insulating film.

14. The sensor according to claim 13 , further comprising a wiring layer between the light blocking portion and the microlens in the insulating film.

15. The sensor according to claim 10 , wherein an extended line from a boundary line between the third region and the first region is perpendicular to a longitudinal direction of the gate.

16. The sensor according to claim 10 , wherein the plurality of pixels include pixels including the light blocking portions having different shapes in accordance with positions at which the pixels are arranged.

Assignees

• Canon Kk

Inventors

• Kato Taro
• Iba Jun
• Iwata Koichiro
• Akabori Hiroo
• Shigemori Shota
• Hashimoto Kouhei

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N23/54

  Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils · CPC title

• H04N25/00 Primary

  Circuitry of solid-state image sensors [SSIS]; Control thereof · CPC title

• H04N5/378

  Electricity · mapped topic