Method for manufacturing semiconductor substrate

Patent metadata

Field	Value
Publication number	US-9831086-B2
Application number	US-201715468900-A
Country	US
Kind code	B2
Filing date	Mar 24, 2017
Priority date	Mar 30, 2016
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor substrate, the method comprising:
coating a diffusion agent composition on a semiconductor substrate I that is an object into which an impurity diffusion ingredient (A) is to be diffused, to form a coating film having a thickness of not more than 30 nm; and
diffusing the impurity diffusion ingredient (A) in the diffusion agent composition into the semiconductor substrate I, wherein
the diffusion agent composition contains the impurity diffusion ingredient (A) and a Si compound (B) that is hydrolyzable to produce a silanol group, and
in coating the diffusion agent composition, an atmosphere around the semiconductor substrate I has a relative humidity of not more than 40%.

2. The method for manufacturing a semiconductor substrate according to claim 1 , wherein the atmosphere has a temperature of not more than 23° C.

3. The method for manufacturing a semiconductor substrate according to claim 1 , wherein the Si compound (B) is a compound represented by the following formula (1):
R 4-n Si(NCO) n   (1)

wherein R 1 represents a hydrocarbon group; and n is an integer of 3 or 4.

4. The method for manufacturing a semiconductor substrate according to claim 3 , wherein the coating film has a thickness of 0.2 to 10 nm.

5. The method for manufacturing a semiconductor substrate according to claim 1 , wherein the semiconductor substrate I has a three-dimensional structure having convexes and concaves on a surface on which the diffusion agent composition is coated.

6. The method for manufacturing a semiconductor substrate according to claim 1 , further comprising rinsing the coating film with an organic solvent.

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Sawada Yoshihiro
• Takahashi Yu

Classifications

• H10P32/19 Primary

  Diffusion sources · CPC title

• H10P32/16

  between a solid phase and a liquid phase · CPC title

• H10P32/1404

  using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase · CPC title

• H10P32/171 Primary

  being group IV material · CPC title

• H01L21/2252 Primary

  Electricity · mapped topic