Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-9831083-B2
Application number	US-201315023232-A
Country	US
Kind code	B2
Filing date	Sep 27, 2013
Priority date	Sep 27, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film containing a prescribed element which is a semiconductor element or a metal element and carbon on a substrate by performing a cycle a prescribed number of times, the cycle including:
supplying an organic-based source containing a bond of the prescribed element and carbon and a bond of the prescribed element and hydrogen and a pseudo catalyst including at least one selected from the group consisting of a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and mixing and confining the organic-based source and the pseudo catalyst in the process chamber;
maintaining a state in which the organic-based source and the pseudo catalyst are mixed and confined in the process chamber; and
exhausting an inside of the process chamber.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst acts so as to break the bond of the prescribed element and hydrogen in the organic-based source.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst acts so as to break the bond of the prescribed element and hydrogen in the organic-based source, and also acts so as to maintain the bond of the prescribed element and carbon in the organic-based source.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst acts so as to generate a hydrogen compound of halogen or a hydrogen compound of boron by reacting with the organic-based source.

5. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst acts so as to generate a hydrogen compound of halogen or a hydrogen compound of boron by allowing halogen or boron contained in the pseudo catalyst, to bind with hydrogen contained in the organic-based source.

6. The method of manufacturing a semiconductor device according to claim 1 , wherein the organic-based source includes a chain structure in its chemical structural formula.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst includes at least one selected from the group consisting of an inorganic halogen compound and an inorganic boron compound.

8. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst includes at least one selected from the group consisting of an inorganic halogen compound not containing the prescribed element and an inorganic boron compound not containing the prescribed element.

9. The method of manufacturing a semiconductor device according to claim 1 , wherein in forming the film containing the prescribed element and carbon, a temperature of the substrate is set to a temperature of not thermally decomposing the organic-based source when the organic-based source alone is supplied into the process chamber.

10. The method of manufacturing a semiconductor device according to claim 1 , wherein in forming the film containing the prescribed element and carbon, a temperature of the substrate is set to a temperature of thermally decomposing the organic-based source when the organic-based source alone is supplied into the process chamber.

11. A substrate processing apparatus, comprising:
a process chamber in which a substrate is housed;
an organic-based source supply system configured to supply an organic-based source containing a bond of the prescribed element which is a semiconductor element or a metal element and carbon and a bond of the prescribed element and hydrogen into the process chamber;
a pseudo catalyst supply system configured to supply a pseudo catalyst including at least one selected from the group consisting of a halogen compound and a boron compound, into the process chamber;
an exhaust system configured to exhaust an inside of the process chamber; and
a control part configured to control the organic-based source supply system, the pseudo catalyst supply system, and the exhaust system, so as to make a processing of forming a film containing the prescribed element and carbon on the substrate perform by performing a cycle a prescribed number of times, the cycle including:
a process of supplying the organic-based source and the pseudo catalyst into the process chamber in which the substrate is housed, and mixing and confining the organic-based source and the pseudo catalyst in the process chamber;
a process of maintaining a state in which the organic-based source and the pseudo catalyst are mixed and confined in the process chamber; and
a process of exhausting the inside of the process chamber.

12. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a procedure of forming a film containing a prescribed element which is a semiconductor element or a metal element and carbon on a substrate by performing a cycle a prescribed number of times, the cycle including:
a procedure of supplying an organic-based source containing a bond of the prescribed element and carbon and a bond of the prescribed element and hydrogen and a pseudo catalyst including at least one selected from the group consisting of a halogen compound and a boron compound, into the process chamber in which the substrate is housed, and mixing and confining the organic-based source and the pseudo catalyst in the process chamber;
a procedure of maintaining a state in which the organic-based source and the pseudo catalyst are mixed and confined in the process chamber; and
a procedure of exhausting an inside of the process chamber.

13. The method of manufacturing a semiconductor device according to claim 1 , wherein the organic-based source includes at least one selected from the group consisting of
Si x C y H 2(x+y+1) and Si x C (y+1) H 2(x+y+1)
where
x is an integer of 1 or more, and
y is an integer of 1 or more.

14. The method of manufacturing a semiconductor device according to claim 1 , wherein the pseudo catalyst includes at least one selected from the group consisting of BClH 2 , BCl 2 H, BOCl 3 , BF 3 , BBr 3 , BI 3 , B 2 H 6 , and NF 3 .

Assignees

• Hitachi Int Electric Inc

Inventors

• Yamaguchi Daigo
• Kamakura Tsukasa
• Ashihara Hiroshi
• Takeda Tsuyoshi
• Sato Taketoshi

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title