Polymer-clad optical modulators

Patent metadata

Field	Value
Publication number	US-9829727-B2
Application number	US-201415305930-A
Country	US
Kind code	B2
Filing date	May 7, 2014
Priority date	May 7, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.

First claim

What is claimed is:

1. A polymer-clad optical modulator, including:
a substrate comprising an insulating material;
a silicon microring on the substrate;
a silicon waveguide on the substrate adjacent the silicon microring;
an electro-optic polymer covering the silicon microring and the silicon waveguide; and
an electrical contact on top of the electro-optic polymer,
wherein a portion of the silicon microring or a portion of an adjacent silicon layer is lightly doped with an n-type dopant.

2. The optical modulator of claim 1 , wherein the silicon microring or the adjacent silicon layer is doped to a level of about 5×10 15 to 5×10 17 cm −3 .

3. The optical modulator of claim 1 , wherein the electro-optic polymer comprises a polymer, wherein the refractive index of the polymer changes with the applied electric field.

4. The optical modulator of claim 1 , wherein one or both of the silicon microring and silicon waveguide comprise amorphous silicon.

5. The optical modulator of claim 1 , wherein the silicon waveguide has a width of about 200 to 400 μm that extends the optical mode in EO polymer.

6. The optical modulator of claim 5 , wherein one or both of the microring and the waveguide have a slot configuration.

7. The optical modulator of claim 1 , wherein top electrical contact comprises indium tin oxide.

8. An optical modulator with vertical polymer-cladding for RF modulation and depletion type modulation for wavelength tuning including:
a substrate comprising an insulating material;
a silicon microring on the substrate;
a silicon waveguide on the substrate adjacent the silicon microring;
an electro-optic polymer covering the silicon microring and the silicon waveguide; and
an electrical contact on top of the electro-optic polymer,
wherein an outer portion of the silicon microring is lightly doped with a first conductivity type and an inner portion of the microring is lightly doped with a second, and opposite, conductivity type; and
wherein a first vertically-disposed electrode contacts a highly doped contact of the first conductivity type outside the silicon microring and a second vertically-disposed electrode contacts a highly doped contact of the second conductivity type inside the microring.

9. The optical modulator of claim 8 , wherein the silicon microring is doped to a level of about 5×10 15 to 5×10 17 cm −3 .

10. An optical modulator with vertical polymer-cladding layer for RF modulation and lateral carrier injection modulation for wavelength tuning, including:
a substrate comprising an insulating material;
a silicon microring on the substrate;
a silicon waveguide on the substrate adjacent the silicon microring;
an electro-optic polymer covering the silicon microring and the silicon waveguide; and
an electrical contact on top of the electro-optic polymer,
wherein the silicon microring is intrinsic and a portion of an adjacent silicon layer is lightly doped; and
wherein a first vertically-disposed electrode contacts a highly doped contact of a first conductivity type outside the silicon microring and a second vertically-disposed electrode contacts a highly doped contact of the second conductivity type inside the microring, the silicon microring and the portion of the adjacent silicon layer being of the second conductivity type.

11. The optical modulator of claim 10 , wherein the silicon microring is doped to a level of about 5×10 15 to 5×10 17 cm −3 .

12. A polymer-clad optical modulator, including:
a substrate comprising an insulating material;
a silicon microring on the substrate;
a silicon waveguide on the substrate adjacent the silicon microring;
an electro-optic polymer covering the silicon microring and the silicon waveguide; and
an electrical contact on top of the electro-optic polymer,
wherein a portion of the silicon microring or a portion of an adjacent silicon layer is lightly doped with a p-type dopant.

13. The optical modulator of claim 12 , wherein the silicon microring or the adjacent silicon layer is doped to a level of about 5×10 15 to 5×10 17 cm −3 .

14. The optical modulator of claim 12 , wherein the electro-optic polymer comprises a polymer, wherein the refractive index of the polymer changes with the applied electric field.

15. The optical modulator of claim 12 , wherein one or both of the silicon microring and silicon waveguide comprise amorphous silicon.

16. The optical modulator of claim 12 , wherein the silicon waveguide has a width of about 200 to 400 μm that extends the optical mode in EO polymer.

17. The optical modulator of claim 16 , wherein one or both of the microring and the waveguide have a slot configuration.

18. The optical modulator of claim 12 , wherein top electrical contact comprises indium tin oxide.

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Huang Zhihong
• Liang Di
• Peng Zhen
• Beausoleil Raymond G

Classifications

• G02F1/0018

  Electro-optical materials · CPC title

• G02F1/025

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/065 Primary

  in an optical waveguide structure · CPC title

• G02F2202/022

  polymeric · CPC title

• G02F2202/103

  a-Si · CPC title