Thin psd for laser-scanning systems
US-2016265902-A1 · Sep 15, 2016 · US
US9829445B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9829445-B2 |
| Application number | US-201514957643-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2015 |
| Priority date | Dec 3, 2015 |
| Publication date | Nov 28, 2017 |
| Grant date | Nov 28, 2017 |
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An apparatus for testing diffraction or diffusion of a light beam is provided. The apparatus includes a photosensitive semiconductor, shaped to define an aperture. At least one anode, and a plurality of cathodes, are coupled to the semiconductor. An optical element, configured to modify an angular spread of a light beam that traverses the optical element, is disposed within the aperture. A detector is configured to detect electric currents that pass between the cathodes and the anode in response to a portion of the light beam exiting the optical element and hitting the semiconductor. Other embodiments are also described.
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The invention claimed is: 1. An apparatus, comprising: a photosensitive semiconductor, shaped to define an aperture; at least one anode, and a plurality of cathodes, coupled to the semiconductor; an optical element, configured to modify an angular spread of a light beam that traverses the optical element, disposed within the aperture; a detector, configured to detect electric currents that pass between the cathodes and the anode in response to a portion of the light beam exiting the optical element and hitting the semiconductor; and a processor configured to: compute a quantity that is based on respective magnitudes of one or more of the detected electric currents, compare the quantity to a baseline quantity, and generate an output in response thereto. 2. The apparatus according to claim 1 , wherein the optical element is selected from the group consisting of: a diffractive optical element (DOE), and a diffuser. 3. The apparatus according to claim 1 , wherein the semiconductor is shaped to define a rectangular front face and a rectangular rear face, the aperture passing through the semiconductor from the front face to the rear face. 4. The apparatus according to claim 3 , wherein the semiconductor is further shaped to define four outward-facing side faces between the front face and the rear face, and wherein the cathodes comprise four cathodes, each of which is coupled to a respective one of the outward-facing side faces. 5. The apparatus according to claim 1 , wherein a perimeter of the optical element is in contact with a perimeter of the aperture. 6. The apparatus according to claim 1 , wherein the processor is further configured to, in response to comparing the quantity to the baseline quantity, identify an abnormal power level of the light beam. 7. The apparatus according to claim 1 , wherein the optical element is a diffractive optical element (DOE), and wherein the processor is further configured to, in response to comparing the quantity to the baseline quantity, identify an abnormal diffraction pattern of the DOE. 8. The apparatus according to claim 1 , further comprising a light source configured to direct the light beam through the optical element. 9. The apparatus according to claim 8 , wherein the output controls the light source. 10. The apparatus according to claim 1 , wherein the optical element is shaped to define (i) a front face at a front opening of the aperture, and (ii) a rear face at a rear opening of the aperture, and wherein the semiconductor partially covers the rear face of the optical element. 11. A method, comprising: providing a photosensitive semiconductor shaped to define an aperture, at least one anode, and a plurality of cathodes, being coupled to the semiconductor, and an optical element, configured to modify an angular spread of a light beam that traverses the optical element, being disposed within the aperture; detecting electric currents that pass between the cathodes and the anode in response to a portion of the light beam exiting the optical element and hitting the semiconductor; computing a quantity that is based on respective magnitudes of one or more of the detected electric currents; comparing the quantity to a baseline quantity; and generating an output in response to the comparing. 12. The method according to claim 11 , wherein the quantity is a total magnitude of the electric currents. 13. The method according to claim 11 , wherein the quantity is based on a difference between two of the magnitudes. 14. The method according to claim 11 , further comprising, using a light source, directing the light beam through the optical element. 15. The method according to claim 14 , wherein the output controls the light source. 16. The method according to claim 11 , wherein the optical element is shaped to define (i) a front face at a front opening of the aperture, (ii) a rear face at a rear opening of the aperture, and (iii) one or more side faces, and wherein at least part of the portion of the light beam that hits the semiconductor exits from at least one of the side faces of the optical element. 17. The method according to claim 16 , wherein part of the portion of the light beam that hits the semiconductor exits from the rear face of the optical element. 18. The method according to claim 11 , wherein the optical element is selected from the group consisting of: a diffractive optical element (DOE), and a diffuser. 19. The method according to claim 11 , further comprising, in response to comparing the quantity to the baseline quantity, identifying an abnormal power level of the light beam. 20. The method according to claim 11 , wherein the optical element is a diffractive optical element (DOE), and wherein the method further comprises, in response to comparing the quantity to the baseline quantity, identifying an abnormal diffraction pattern of the DOE.
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