Micromechanical pressure sensor structure having a side wall layer

Patent metadata

Field	Value
Publication number	US-9829405-B2
Application number	US-201514600240-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Jan 17, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A microelectromechanical pressure sensor structure that comprises a planar base, a side wall layer and a diaphragm plate. The side wall layer forms side walls that extend away from the planar base into contact with the diaphragm plate. The side wall layer is formed of at least three layers, a first layer and a second layer of insulating material and a third layer of conductive material, wherein the third layer is between the first layer and the second layer. The conducting layer provides a shield electrode within the isolating side wall layer. This shield electrode is adapted to reduce undesired effects to the capacitive measurement results.

First claim

The invention claimed is:

1. A microelectromechanical pressure sensor structure, comprising:
a planar base;
a side wall layer; and
a diaphragm plate, wherein
the side wall layer forms side walls that extend away from the planar base into contact with the diaphragm plate,
the side wall layer is formed of at least three layers, a first layer and a second layer of insulating material, and a third layer of conductive material,
the third layer is between the first layer and the second layer,.
the first layer extends horizontally towards the outer direction beyond the third layer, and the third layer extends horizontally towards the outer direction beyond the second layer, and
in a cross-section, an outer periphery of the first insulating layer extends horizontally beyond an outer periphery of the third layer, and the outer periphery of the third layer extends horizontally beyond an outer periphery of the second insulating layer.

2. The microelectromechanical pressure sensor structure of claim 1 , wherein in a cross section, a distance between opposite inner peripheries of the first layer is smaller than a distance between opposite inner peripheries of the third layer, and a distance between opposite inner peripheries of the third layer is smaller than a distance between opposite inner peripheries of the second layer.

3. The microelectromechanical pressure sensor structure of claim 1 , wherein
a portion of the diaphragm plate not in contact with the side wall layer provides a diaphragm, and wherein
a ratio between a cross-sectional width of the gap in the third layer level and a corresponding cross-sectional width of the diaphragm is smaller than one.

4. The microelectromechanical pressure sensor structure of claim 3 , wherein the ratio is in a range of 0.3 to 0.7.

5. The microelectromechanical pressure sensor structure of claim 4 , wherein the ratio is 0.4.

6. The microelectromechanical pressure sensor structure of claim 1 , wherein at least one of the first and the second layer comprises silicon-dioxide.

7. The microelectromechanical pressure sensor structure of claim 1 , further comprising an internal electrode layer of conducting material within the side walls, wherein the internal electrode layer is electrically isolated from the third layer.

8. The microelectromechanical pressure sensor structure of claim 7 , comprising an electrically isolating region circumscribing the internal electrode layer, thereby providing electrical isolation.

9. The microelectromechanical pressure sensor structure of claim 8 , wherein the electrically isolating region comprises a trench that extends to the planar base through the internal electrode layer and the first layer.

10. The microelectromechanical pressure sensor structure of claim 8 , wherein the internal electrode layer is in electrical contact with the planar base through a contact opening.

11. The microelectromechanical pressure sensor structure of claim 7 , wherein the internal electrode layer is in electrical contact with the planar base through a contact opening.

12. A pressure sensor that comprises the microelectromechanical pressure sensor structure comprising:
a planar base
a side wall layer; and
a diaphragm plate, wherein
the side wall layer forms side walls that extend away from the planar base into contact with the diaphragm plate,
the side wall layer is formed of at least three layers, a first layer and a second layer of insulating material, and a third layer of conductive material,
the third layer is between the first layer and the second layer, and
the first layer extends horizontally towards the outer direction beyond the third layer, and the third layer extends horizontally towards the outer direction beyond the second layer, the pressure sensor further comprising:
an electrical circuit connected to electrical leads to the planar base, to a shield electrode and to the diaphragm plate, wherein
the electrical circuit comprises an operational amplifier in a feed-back configuration connected to keep a. shield electrode in a same potential with either of the planar base or the diaphragm plate, and to separate a current path through the shield electrode and the diaphragm plate from each other.

13. The pressure sensor of claim 12 , further comprising an electrical circuit connected to electrical leads to the planar base, to the layer of conducting material and to the diaphragm plate, wherein
the electrical circuit comprises an operational amplifier in a feed-back configuration connected to keep the third layer of conducting material in a same potential with either of the planar base or the diaphragm plate, and to separate a current path through the shield electrode and a current path through diaphragm plate from each other.

14. The pressure sensor of claim 13 , wherein the operational amplifier comprises an inverting operational amplifier or a non-inverting operational amplifier.

15. The pressure sensor of claim 12 , wherein the operational amplifier comprises an inverting operational amplifier or a non-inverting operational amplifier.

16. The microelectromechanical pressure sensor structure of claim 12 , wherein in a cross section, a distance between opposite inner peripheries of the first layer is smaller than a distance between opposite inner peripheries of the third layer, and a distance between opposite inner peripheries of the third layer is smaller than a distance between opposite inner peripheries of the second layer.

17. The pressure sensor of claim 12 , further comprising
an electrical circuit connected to electrical leads to the planar base, to the layer of conducting material and to the diaphragm plate, wherein
the electrical circuit comprises an operational amplifier in a feed-back configuration connected to keep a layer of conducting material in a same potential with either of the planar base or the diaphragm plate, and to separate a current path through the shield electrode and a current path through diaphragm plate from each other.

Assignees

• Murata Manufacturing Co

Inventors

• Kuisma Heikki
• Yoshida Koichi

Classifications

• G01L9/0072 Primary

  using variations in capacitance · CPC title

• G01L9/0041

  Transmitting or indicating the displacement of flexible diaphragms · CPC title

• B81B3/00

  Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B5/00 takes precedence) · CPC title

• G01L7/08

  of the flexible-diaphragm type · CPC title