Method of forming metal film

Patent metadata

Field	Value
Publication number	US-9828694-B2
Application number	US-201514838126-A
Country	US
Kind code	B2
Filing date	Aug 27, 2015
Priority date	Aug 29, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

First claim

The invention claimed is:

1. A method of forming a metal film on a base, comprising:
an atomization step of atomizing a raw-material solution into a mist, in which the raw-material solution is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, an amine compound, or a protonic acid;
a carrier-gas supply step of supplying a carrier gas to the mist;
a mist supply step of supplying the mist onto the base using the carrier gas; and
a metal-film formation step of forming the metal film on part or all of a surface of the base by causing the mist to thermally react, wherein the metal film consists of one or more metals,
wherein the thermal reaction is carried out under normal pressure or atmospheric pressure,
the thermal reaction is not carried out in an oxidizing atmosphere, and
the thermal reaction is not carried out with a plasma.

2. The method of claim 1 , wherein the organic solvent contains the oxidant.

3. The method of claim 2 , wherein a volume ratio between the oxidant and the organic solvent ranges from 1:99 to 50:50.

4. The method of claim 2 , wherein the oxidant is water or hydrogen peroxide.

5. The method of claim 1 , wherein the organic solvent contains the amine compound.

6. The method of claim 5 , wherein the amine compound is diamine.

7. The method of claim 1 , wherein the organic solvent contains the protonic acid.

8. The method of claim 7 , wherein the protonic acid is a halide acid.

9. The method of claim 1 , wherein the thermal reaction is carried out at a temperature of 200° C. to 650° C.

10. The method of claim 1 , wherein the thermal reaction is carried out in an atmosphere of an inert gas or a reducing gas.

11. The method of claim 1 , wherein the one or more metals are selected from gold (Au), silver (Ag), platinum (Pt), copper (Cu), iron (Fe), manganese (Mn), nickel (Ni), palladium (Pd), cobalt (Co), rhodium (Rh), ruthenium(Ru), chromium (Cr), molybdenum (Mo), tungsten (W), and aluminum (Al).

12. The method of claim 1 , wherein the organic solvent is an alcohol.

13. The method of claim 1 , wherein the raw-material solution is a mixed solution of an organic solvent containing the oxidant, the amine compound, or the protonic acid and a metal complex solution containing the metal or a metal salt solution containing the metal.

14. A metal film formed using the method of claim 1 .

15. The metal film of claim 14 , wherein the metal film is an electrode.

16. A semiconductor device comprising the metal film of claim 15 as an electrode, further comprising at least a semiconductor layer.

17. The method of claim 2 , wherein a volume ratio between the oxidant and organic solvent ranges from 1:99 to 40:60.

18. The method of claim 1 , the metal film formation step forms the metal film with a thickness of 10 μm or more.

Assignees

• Flosfia Inc

Inventors

• Oda Masaya
• Hitora Toshimi

Classifications

• H10P14/46

  using a liquid · CPC title

• C03C2218/112

  by spraying · CPC title

• C30B29/02

  Elements · CPC title

• C23C16/4486

  by producing an aerosol and subsequent evaporation of the droplets or particles · CPC title

• C03C17/10

  by deposition from the liquid phase · CPC title