Thin-layer capacitors with large scale integration
US-2015380168-A1 · Dec 31, 2015 · US
US9828395B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9828395-B2 |
| Application number | US-201615255369-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2016 |
| Priority date | Mar 10, 2016 |
| Publication date | Nov 28, 2017 |
| Grant date | Nov 28, 2017 |
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A nanocrystal represented by the following Formula 1 and a preparation method thereof: AMX 3 L Formula 1 wherein A is cesium (Cs), rubidium (Rb), or an ammonium salt, M is germanium (Ge), tin (Sn), or lead (Pb), X is one or more selected from Cl, Br and I, and L is an organic functional group having one terminal selected from a phosphonic acid group, a carboxylic acid group, and an amino group.
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What is claimed is: 1. A nanocrystal represented by Formula 1: AMX 3 L Formula 1 wherein A is selected from the group consisting of cesium (Cs), rubidium (Rb), and an ammonium salt, M is selected from the group consisting of germanium (Ge), tin (Sn), and lead (Pb), X is one or more selected from the group consisting of Cl, Br, and I, and L is CH 3 (CH 2 ) 6 P(═O)(OH) 2 , CH 3 (CH 2 ) 7 P(═O)(OH) 2 , CH 3 (CH 2 ) 8 P(═O)(OH) 2 , CH 3 (CH 2 ) 9 P(═O)(OH) 2 , CH 3 (CH 2 ) 10 P(═O)(OH) 2 , CH 3 (CH 2 ) 11 P(═O)(OH) 2 , or CH 3 (CH 2 ) 12 P(═O)(OH) 2 . 2. The nanocrystal of claim 1 , wherein the nanocrystal represented by Formula 1 is a compound represented by Formula 2: AMI x Br 3-x L Formula 2 wherein A is selected from the group consisting of cesium (Cs), rubidium (Rb), and an ammonium salt, M is selected from the group consisting of Ge, Sn, and Pb, and 0<x≦3. 3. The nanocrystal of claim 1 , wherein the nanocrystal is a compound represented by the following Formula 3: CsPbI x Br 3-x L Formula 3 wherein 0<x≦3. 4. The nanocrystal of claim 1 , wherein the nanocrystal is a compound represented by the following Formula 4: CsPbI x Br 3-x L Formula 4 wherein 0<x≦3. 5. The nanocrystal of claim 1 , wherein AMX 3 in the nanocrystal is CsPbI 3 , CsPbBr 1.92 I 1.08 , CsPbBr 1.8 I 1.2 , CsPbBr 1.7 I 1.3 , CsPbBr 1.6 I 1.4 , CsPbBr 1.1 I 1.9 , CsPbBr 1.2 I 1.8 , CsPbBr 0.9 I 2.1 , CsPbBr 0.7 I 2.3 , CsPbBr 0.5 I 2.5 , CsPbBr 0.3 I 2.7 , or CsPbBr 0.1 I 2.9 . 6. The nanocrystal of claim 4 , wherein the nanocrystal represented by Formula 4 is a nanocrystal of CsPbBr 1.92 I 1.08 . 7. The nanocrystal of claim 1 , wherein the nanocrystal is a colloidal perovskite quantum dot. 8. The nanocrystal of claim 1 , wherein an emission wavelength of the nanocrystal is 500 to 700 nm, and a difference in the emission wavelength after 1 week is less than 50 nm. 9. The nanocrystal of claim 1 , wherein a content of one or more selected from the group consisting of Cl, Br and I, when extracted from the nanocrystal to an aqueous layer, is 80 mg/l or less, and a content of one or more selected from the group consisting of cesium (Cs) and rubidium (Rb), when extracted from the nanocrystal to an aqueous layer, is 40 mg/l or less. 10. A method of preparing the nanocrystal of claim 1 , the method comprising: mixing a metal halide comprising one or more selected from the group consisting of germanium (Ge), tin (Sn), and lead (Pb) with a solvent to form a mixture, and drying the mixture to form a dried mixture; and adding, to the dried mixture, a surfactant, a compound comprising an organic functional group having one terminal as a phosphonic acid group, and an organic acid comprising one or more selected from the group consisting of cesium (Cs), rubidium (Rb), and an ammonium salt, followed by mixing and heat-treatment. 11. The method of claim 10 , wherein the compound comprising an organic functional group having one terminal as a phosphonic acid group is added in an amount of 0.1 to 1 mole, based on 1 mole of the metal halide. 12. The method of claim 10 , wherein the organic acid is at least one selected from the group consisting of cesium oleate and rubidium oleate. 13. The method of claim 10 , wherein the heat treatment is performed at a temperature of from 100 to 200° C. 14. The method of claim 10 , wherein the compound comprising an organic functional group having one terminal as a phosphonic acid group is 1-tetradecyl phosphonic acid, n-hexyl phosphonic acid, or n-octadecyl phosphonic acid. 15. The method of claim 10 , wherein the metal halide is at least one selected from the group consisting of lead iodide (PbI 2 ), lead bromide (PbBr 2 ), germanium iodide (GeI 2 ), germanium bromide (GeBr 2 ), tin iodide (SnI 2 ), and tin bromide (SnBr 2 ). 16. The method of claim 10 , wherein the surfactant is at least one selected from the group consisting of C 1 -C 18 carboxylic acid, C 3 -C 18 alkyl amine, and C 1 -C 18 alcohol. 17. The method of claim 16 , wherein the C 1 -C 18 carboxylic acid is selected from the group consisting of oleic acid, octanoic acid, stearic acid, and decanoic acid, the C 1 -C 18 alkylamine is selected from the group consisting of oleylamine, octylamine, hexadecylamine, octadecylamine, and tri-n-octylamine, and the C 1 -C 18 alcohol is selected from the group consisting of oleyl alcohol, octanol, and butanol. 18. The method of claim 10 , wherein the solvent is one or more selected from the group consisting of 1-octadecene, 1-decene, 1-undecene, 1-dodecene, 1-tetradecene, 1-hexadecene, and 1-eicosene. 19. The method of claim 10 , wherein the drying is performed at a temperature of from 100 to 150° C.
Acyclic saturated acids which can have further substituents on alkyl · CPC title
Manufacture or treatment of nanostructures · CPC title
Electromagnetic energy · CPC title
Nanooptics, e.g. quantum optics or photonic crystals · CPC title
Chemical synthesis, e.g. chemical bonding or breaking · CPC title
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