Handle Substrate, Composite Substrate for Semiconductor, and Semiconductor Circuit Board and Method for Manufacturing the Same
US-2016005643-A1 · Jan 7, 2016 · US
US9828253B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9828253-B2 |
| Application number | US-201514666480-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2015 |
| Priority date | Mar 26, 2014 |
| Publication date | Nov 28, 2017 |
| Grant date | Nov 28, 2017 |
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The disclosure relates to a nanotube film structure. The nanotube film structure includes at least one nanotube film. The at least one nanotube film includes a plurality of nanotubes orderly arranged and combined with each other by ionic bonds. The nanotube film is fabricated by using the template of carbon nanotube film. The carbon nanotube film is drawn from supper aligned carbon nanotube array and includes a plurality of carbon nanotubes joined end to end.
Opening claim text (preview).
What is claimed is: 1. A nanotube film structure comprising: a nanotube film, wherein the nanotube film comprises a plurality of nanotubes orderly arranged and ionicly bonded to each other by direct contact with each other, and the nanotube film is free of carbon nanotubes. 2. The nanotube film structure of claim 1 , wherein adjacent two of the plurality of nanotubes are internally communicated such that interior of the adjacent two of the plurality of nanotubes are in communication with each other at a location where the adjacent two of the plurality of nanotubes are in direct contact with each other. 3. The nanotube film structure of claim 1 , wherein the plurality of nanotubes are substantially parallel with each other. 4. The nanotube film structure of claim 3 , wherein the nanotube film comprises two stacked nanotube films. 5. The nanotube film structure of claim 4 , wherein nanotubes of one of the two stacked nanotube films are perpendicular with nanotubes of the other one of the two stacked nanotube films. 6. The nanotube film structure of claim 4 , wherein the two stacked nanotube films are combined with each other by ionic bonds. 7. The nanotube film structure of claim 1 , wherein each of the plurality of nanotubes has a wall with a thickness in a range from about 10 nanometers to about 100 nanometers. 8. The nanotube film structure of claim 1 , wherein at least part of the plurality of nanotubes extend from a first side of the nanotube film to a second side opposite to the first side. 9. The nanotube film structure of claim 1 , wherein a length of the plurality of nanotubes is the same as a length or a width of the nanotube film. 10. The nanotube film structure of claim 1 , wherein a material of the plurality of nanotubes is selected from the group consisting of metal oxide, metal nitride, metal carbide, silicon oxide, silicon nitride and silicon carbide. 11. The nanotube film structure of claim 1 , wherein the nanotube film defines a plurality of openings. 12. The nanotube film structure of claim 1 , wherein the nanotube film is a free-standing structure. 13. A nanotube film structure comprising: a nanotube film, wherein the nanotube film comprises a plurality of nanotubes ironically bonded to each other by direct contact with each other and fabricated from a material selected from the group consisting of metal oxide, metal nitride, metal carbide, silicon oxide, silicon nitride and silicon carbide, and the nanotube film is free of carbon nanotubes. 14. The nanotube film structure of claim 13 , wherein the nanotube film is a free-standing structure.
Aluminium oxide; Aluminium hydroxide; Aluminates · CPC title
single-walled · CPC title
Carbon nanotubes · CPC title
Web or sheet containing structurally defined element or component · CPC title
Nanotubes · CPC title
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