Compliant electrostatic transfer head with defined cavity

Patent metadata

Field	Value
Publication number	US-9828244-B2
Application number	US-201414502994-A
Country	US
Kind code	B2
Filing date	Sep 30, 2014
Priority date	Sep 30, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a base substrate, a cavity template layer on the base substrate, a first confinement layer between the base substrate and the cavity template layer, and a patterned device layer on the cavity template layer. The patterned device layer includes an electrode that is deflectable toward a cavity in the cavity template layer. In an embodiment, a second confinement layer is between the cavity template layer and the patterned device layer.

First claim

What is claimed is:

1. A compliant electrostatic transfer head comprising:
a base substrate;
a cavity template layer on the base substrate;
a first confinement layer between the base substrate and the cavity template layer;
a patterned device layer on the cavity template layer, the patterned device layer comprising an electrode that is deflectable toward a cavity in the cavity template layer; and
a second confinement layer between the cavity template layer and the patterned device layer, wherein the second confinement layer spans along a top surface of the cavity template layer and directly above the cavity; and
wherein the cavity includes a bottom surface defined by the first confinement layer and cavity sidewalls defined by the second confinement layer.

2. The compliant electrostatic transfer head of claim 1 , wherein the cavity comprises substantially vertical sidewalls.

3. The compliant electrostatic transfer head of claim 1 , wherein the second confinement layer is formed directly on the cavity template layer.

4. The compliant electrostatic transfer head of claim 1 , further comprising a spring support layer between the cavity template layer and the patterned device layer.

5. The compliant electrostatic transfer head of claim 4 , further comprising an insulating layer between the spring support layer and the patterned device layer, wherein the insulating layer electrically insulates the patterned device layer from the spring support layer.

6. The compliant electrostatic transfer head of claim 1 , wherein the patterned device layer comprises a pair of electrodes that is deflectable toward the cavity in the cavity template layer, and the electrode is one of the pair of electrodes.

7. The compliant electrostatic transfer head of claim 6 , wherein the pair of electrodes includes a first electrode lead integrally formed with a first mesa structure protruding above the first electrode lead, and a second electrode lead integrally formed with a second mesa structure protruding above the second electrode lead.

8. The compliant electrostatic transfer head of claim 7 , wherein the patterned device layer further comprises a first trace interconnect integrally formed with a first electrode, and a second trace interconnect integrally formed with a second electrode.

9. The compliant electrostatic transfer head of claim 8 , wherein the first and second electrodes form an electrode beam profile extending between the first and second trace interconnects.

10. The compliant electrostatic transfer head claim 9 , wherein the each of the first and second electrodes comprises a double bend.

11. The compliant electrostatic transfer head of claim 10 , wherein the electrode beam profile comprises an S-shape configuration.

12. The compliant electrostatic transfer head claim 7 , wherein the first and second mesa structures are separated by trench characterized by a width of 1.0 um or less, and the trench is filled with a dielectric material.

13. The compliant electrostatic transfer head of claim 1 , wherein the first confinement layer and the second confinement layer comprise a same material.

14. The compliant electrostatic transfer head of claim 1 , wherein the first confinement layer and the second confinement layer comprise SiO 2 .

15. The compliant electrostatic transfer head of claim 14 , wherein the patterned device layer comprises silicon.

16. The compliant electrostatic transfer head of claim 15 , wherein the cavity template layer comprises silicon.

17. The compliant electrostatic transfer head of claim 16 , wherein the base substrate comprises silicon.

18. A compliant electrostatic transfer head comprising:
a base substrate;
a cavity template layer on the base substrate;
a first confinement layer between the base substrate and the cavity template layer;
a patterned device layer on the cavity template layer, the patterned device layer comprising an electrode that is deflectable toward a cavity in the cavity template layer; and
a second confinement layer between the cavity template layer and the patterned device layer, wherein the second confinement layer spans along a top surface of the cavity template layer and directly above the cavity;
a spring support layer between the cavity template layer and the patterned device layer; and
an insulating layer between the spring support layer and the patterned device layer, wherein the insulating layer electrically insulates the patterned device layer from the spring support layer.

19. The compliant electrostatic transfer head of claim 18 , wherein the patterned device layer comprises a pair of electrodes that is deflectable toward the cavity in the cavity template layer, and the electrode is one of the pair of electrodes.

20. The compliant electrostatic transfer head of claim 19 , wherein the pair of electrodes includes a first electrode lead integrally formed with a first mesa structure protruding above the first electrode lead, and a second electrode lead integrally formed with a second mesa structure protruding above the second electrode lead.

Assignees

• Apple Inc

Inventors

• Golda Dariusz
• Bathurst Stephen P
• Higginson John A
• Bibl Andreas
• Birkmeyer Jeffrey

Classifications

• B81C99/002 Primary

  Apparatus for assembling MEMS, e.g. micromanipulators (micromanipulators per se B25J7/00) · CPC title

• H01L41/113

  Electricity · mapped topic

• H01H59/0009

  making use of micromechanics · CPC title

• H10N30/30

  with mechanical input and electrical output, e.g. functioning as generators or sensors · CPC title