Power amplification module

Patent metadata

Field	Value
Publication number	US-9825594-B2
Application number	US-201615274313-A
Country	US
Kind code	B2
Filing date	Sep 23, 2016
Priority date	Nov 27, 2015
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A power amplification module includes: a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal; a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal; and first and second bias circuits that supply first and second bias currents to bases of the first and second transistors. The first bias circuit includes a third transistor that outputs the first bias current from its emitter or source, a capacitor that is input with the first radio frequency signal and connected to the base of the first transistor, a first resistor connected between the emitter or source of the third transistor and the base of the first transistor, a second resistor connected between the capacitor and the emitter or source of the third transistor, and a third resistor connected between the capacitor and the base of the first transistor.

First claim

What is claimed is:

1. A power amplification module comprising:
a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal;
a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal;
a first bias circuit that supplies a first bias current to a base of the first transistor; and
a second bias circuit that supplies a second bias current to a base of the second transistor;
wherein the first bias circuit includes:
a third transistor, wherein the first bias current is output from an emitter or a source of the third transistor,
a capacitor, wherein the first radio frequency signal is input to a first end of the capacitor and a second end of the capacitor is connected to the base of the first transistor,
a first resistor, wherein a first end of the first resistor is connected to the emitter or source of the third transistor and a second end of the first resistor is connected to the base of the first transistor,
a second resistor, wherein a first end of the second resistor is connected to the first end of the capacitor and a second end of the second resistor is connected to the emitter or source of the third transistor,
a third resistor, wherein a first end of the third resistor is connected to the first end of the capacitor and a second end of the third resistor is connected to the base of the first transistor,
a fourth transistor and a fifth transistor, an emitter of the fourth transistor being connected to a collector of the fifth transistor, wherein a base of the fourth transistor is connected to a collector of the fourth transistor and to a base or gate of the third transistor, a base of the fifth transistor is connected to the collector of the fifth transistor, and the emitter of the fifth transistor is grounded, and
a second capacitor connected between the collector of the fourth transistor and the emitter of the fifth transistor.

2. The power amplification module according to claim 1 , wherein the third transistor is a bipolar transistor.

3. The power amplification module according to claim 1 , wherein the third transistor is a field effect transistor.

4. The power amplification module according to claim 1 , wherein a resistance value of the second resistor is smaller than a resistance value of the first resistor.

5. The power amplification module according to claim 1 , wherein a resistance value of the second resistor is smaller than a resistance value of the first resistor.

6. A power amplification module comprising:
a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal;
a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal;
a first bias circuit that supplies a first bias current to a base of the first transistor; and
a second bias circuit that supplies a second bias current to a base of the second transistor;
wherein the first bias circuit includes:
a third transistor, wherein the first bias current is output from an emitter or a source of the third transistor,
a capacitor, wherein the first radio frequency signal is input to a first end of the capacitor and a second end of the capacitor is connected to the base of the first transistor,
a first resistor, wherein a first end of the first resistor is connected to the emitter or source of the third transistor and a second end of the first resistor is connected to the base of the first transistor,
a second resistor, wherein a first end of the second resistor is connected to the first end of the capacitor and a second end of the second resistor is connected to the emitter or source of the third transistor,
a third resistor, wherein a first end of the third resistor is connected to the first end of the capacitor and a second end of the third resistor is connected to the base of the first transistor,
a fourth transistor, wherein a collector of the fourth transistor is connected to a base or gate of the third transistor, an emitter of the fourth transistor is grounded, and a base of the fourth transistor is connected to the collector of the fourth transistor, and
a second capacitor connected between the collector of the fourth transistor and the emitter of the fourth transistor.

7. The power amplification module according to claim 6 , wherein the third transistor is a field effect transistor.

8. The power amplification module according to claim 6 , wherein a resistance value of the second resistor is smaller than a resistance value of the first resistor.

9. A power amplification module comprising:
a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal;
a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal;
a first bias circuit that supplies a first bias current to a base of the first transistor; and
a second bias circuit that supplies a second bias current to a base of the second transistor;
wherein the first bias circuit includes:
a third transistor, wherein the first bias current is output from an emitter or a source of the third transistor,
a capacitor, wherein the first radio frequency signal is input to a first end of the capacitor and a second end of the capacitor is connected to the base of the first transistor,
a first resistor, wherein a first end of the first resistor is connected to the emitter or source of the third transistor and a second end of the first resistor is connected to the base of the first transistor,
a second resistor, wherein a first end of the second resistor is connected to the first end of the capacitor and a second end of the second resistor is connected to the emitter or source of the third transistor,
a third resistor, wherein a first end of the third resistor is connected to the first end of the capacitor and a second end of the third resistor is connected to the base of the first transistor,
a fourth transistor, wherein a collector of the fourth transistor is connected to a base or gate of the third transistor, an emitter of the fourth transistor is grounded, and a base of the fourth transistor is connected to the emitter or source of the third transistor, and
a second capacitor connected between the collector of the fourth transistor and the emitter of the fourth transistor.

10. The power amplification module according to claim 9 , wherein the third transistor is a field effect transistor.

11. The power amplification module according to claim 9 , wherein a resistance value of the second resistor is smaller than a resistance value of the first resistor.

12. A power amplification module, comprising:
a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal;
a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal;
a first bias circuit that supplies a first bias current to a base of the first transistor; and
a second bias circuit that supplies a second bias current to a base of the second transistor;
wherein the first bias circuit includes:
a third transistor, wherein the first bias current is output from an emitter or a source of the third transistor,
a capacitor, wherein the first radio frequency signal is input to a first end of the capacitor and a second end of the capacitor is connected to the base of the first transistor,
a first resistor, wherein a first end of the first resistor is connected to the emitter or source of the third transistor and a second end of the first resistor is connected to the base of the

Assignees

• Murata Manufacturing Co

Inventors

• Watanabe Kazuo
• Tanaka Satoshi
• Nakai Kazuhito
• Tsutsui Takayuki

Classifications

• H03F2200/21

  Bias resistors are added at the input of an amplifier · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F1/02

  Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation · CPC title

• H03F2203/21106

  An input signal being distributed in parallel over the inputs of a plurality of power amplifiers · CPC title

• H03F3/245 Primary

  with semiconductor devices only · CPC title