Micro-light-emitting diode device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9825200-B2
Application number	US-201615060885-A
Country	US
Kind code	B2
Filing date	Mar 4, 2016
Priority date	May 13, 2015
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

First claim

What is claimed is:

1. A method for manufacturing a micro-light-emitting diode device comprising:
providing a first substrate;
depositing a mask layer on the first substrate;
patterning the mask layer to expose a portion of the first substrate;
etching the exposed portion of the first substrate to form a recess, and a depth at a center of the recess being greater than a depth at an edge of the recess;
removing the mask layer;
forming a micro-light-emitting diode device comprising:
depositing a second semiconductor layer on the recess;
depositing an active layer on the second semiconductor layer, wherein the recess is filled with a portion of the second semiconductor layer; and
depositing a first semiconductor layer on the active layer;
transferring and reversing the first substrate and the micro-light-emitting diode device to a second substrate, the first semiconductor layer of the micro-light-emitting diode device being connected to the second substrate;
etching the first semiconductor layer, the active layer and the second semiconductor layer in a same time to define a size of the micro-light-emitting diode device; and
removing the first substrate.

2. The method of claim 1 , wherein the second semiconductor layer is deposited in the recess and fills and levels up the recess.

3. The method of claim 1 , wherein the portion of the first substrate is etched to form a first shape, and the second semiconductor layer is deposited on the recess to form a light-exiting surface, the light-exiting surface has a second shape, and the first shape and the second shape are the same.

4. The method of claim 1 , further comprising:
providing a panel, and forming at least one thin film transistor on the panel;
gripping the micro-light-emitting diode device to allow the micro-light-emitting diode device to be separated from the second substrate, and moving the micro-light-emitting diode device onto the thin film transistor; and
forming an electrode layer on the second semiconductor layer of the micro-light-emitting diode device.

Assignees

• Au Optronics Corp

Inventors

• Lin Tsung-Yi
• Chang Cheng-Chieh

Classifications

• H01L33/20

  Electricity · mapped topic

• H01L33/22

  Electricity · mapped topic

• H01L33/005 Primary

  Electricity · mapped topic

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title