Solar cell with reduced absorber thickness and reduced back surface recombination

Patent metadata

Field	Value
Publication number	US-9825192-B2
Application number	US-201514844450-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Oct 12, 2012
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

First claim

We claim:

1. A solar cell, prepared by a process comprising the steps of:
etching a first aperture through a reflective layer and a second aperture through a dielectric layer, the first and second apertures to form a third aperture, wherein a first side of the reflective layer is in contact with a second side of a conducting layer, a first side of the dielectric layer is in contact with a second side of the reflective layer, a first side of the conducting layer is in contact with a first side of a substrate;
filling the third aperture with a layer of Copper Indium Gallium Selenide (CIGS) having a first side and a second side, the first side of the layer of CIGS is in direct physical contact with the second side of the conducting layer, the second side of the conducting layer continuously extends across the filled third aperture and covering a second side of the dielectric layer and the second side of the CIGS in contact with a first side of a first transparent layer; and
depositing a second transparent layer, including a first side of second transparent layer in contact with a second side of the first transparent layer, wherein the second transparent layer comprises a conductive material.

2. The solar cell of claim 1 , further comprising coating the second side of the dielectric layer with a UV-curable polymer prior to soft stamping and etching the first and second aperture, and removing the UV-curable polymer subsequent to the soft stamping and etching.

3. The solar cell of claim 2 , further comprising curing the UV-curable polymer by exposing the UV-curable polymer to ultraviolet light.

4. The solar cell of claim 1 , wherein the conducting layer is prepared by sputtering.

5. The solar cell of claim 1 , wherein the reflective layer is prepared by sputtering.

6. The solar cell of claim 5 , further comprising separating and interconnecting areas of the solar cell into sub cells by a method selected from the group consisting of mechanical scribing and laser-scribing.

7. The solar cell of claim 1 , further comprising encapsulating the solar cell to form a module.

8. The solar cell of claim 1 , wherein the conducting layer comprises Molybdenum.

9. A solar cell, prepared by a process comprising the steps of:
depositing a conducting layer on a substrate layer, wherein a first surface of the substrate layer is in communication with a first surface of the conducting layer;
depositing a reflective layer on the conducting layer, wherein a second surface of the conducting layer is in communication with a first surface of the reflective layer;
depositing a dielectric layer on the reflective layer, wherein a second surface of the reflective layer is in communication with a first surface of the dielectric layer;
etching one or more apertures, wherein the one or more apertures extend through the dielectric layer and the reflective layer;
depositing a semiconductor layer, including:
filling the one or more apertures with Copper Indium Gallium Selenide (CIGS), wherein a first portion of a first surface of the semiconductor layer is in direct physical communication with the second surface of the conducting layer and the second surface of the conducting layer continuously extends across the filled one or more apertures;
covering a second surface of the dielectric layer with the CIGS, wherein a second portion of the first surface of the semiconductor layer is in communication with the second surface of the dielectric layer;

depositing a first transparent layer on the semiconductor layer, wherein a first surface of the first transparent layer is in communication with a second surface of the semiconductor layer; and
depositing a second transparent layer on the first transparent layer, wherein a first surface of second transparent layer in communication with a second surface of the first transparent layer, the second transparent layer comprises a conductive material.

10. The solar cell of claim 9 , further comprising coating the second surface of the dielectric layer with a UV-curable polymer prior to a soft stamping and etching the one or more apertures, and removing the UV-curable polymer subsequent to the soft stamping and etching.

11. The solar cell of claim 10 , further comprising curing the UV-curable polymer by exposing the UV-curable polymer to ultraviolet light.

12. The solar cell of claim 9 , wherein the depositing the conducting layer includes sputtering.

13. The solar cell of claim 9 , wherein depositing the reflective layer includes sputtering.

14. The solar cell of claim 13 , further comprising separating areas of the solar cell into sub cells by a method selected from the group consisting of mechanical scribing and laser-scribing.

15. The solar cell of claim 14 , further comprising interconnecting the sub cells of the solar cell.

16. The solar cell of claim 9 , further comprising encapsulating the solar cell to form a module, wherein the encapsulating prevents mechanical and environmental degradation.

17. The solar cell of claim 9 , wherein the conducting layer comprises Molybdenum.

18. A solar cell, prepared by a process comprising the steps of:
depositing a conducting layer on a substrate layer, wherein a first surface of the substrate layer is in communication with a first surface of the conducting layer;
depositing a reflective layer on the conducting layer, wherein a second surface of the conducting layer is in communication with a first surface of the reflective layer, wherein a first aperture is formed in the reflective layer;
depositing a dielectric layer on the reflective layer, wherein a second surface of the reflective layer is in communication with a first surface of the dielectric layer, wherein a second aperture is created in the dielectric layer, wherein the first and second apertures are created in alignment forming a third aperture;
depositing a semiconductor layer, including:
filling the third aperture with Copper Indium Gallium Selenide (CIGS), wherein a first portion of a first surface of the semiconductor layer is in direct physical communication with the second surface of the conducting layer;
covering a second surface of the dielectric layer with the CIGS, wherein a second portion of the first surface of the semiconductor layer is in communication with the second surface of the dielectric layer;

depositing a first transparent layer on the semiconductor layer, wherein a first surface of the first transparent layer is in communication with a second surface of the semiconductor layer; and
depositing a second transparent layer on the first transparent layer, wherein a first surface of second transparent layer in communication with a second surface of the first transparent layer, the second transparent layer comprises a conductive material.

Assignees

• IBM

Inventors

• Eickelmann Hans-Juergen
• Haag Michael
• Kellmann Ruediger
• Schmidt Markus
• Windeln Johannes

Classifications

• Y02E10/52

  PV systems with concentrators · CPC title

• H01L31/03923

  Electricity · mapped topic

• H01L31/0749

  Electricity · mapped topic

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L31/1884

  Electricity · mapped topic