Bidirectional Zener diode

Patent metadata

Field	Value
Publication number	US-9825187-B2
Application number	US-201615041019-A
Country	US
Kind code	B2
Filing date	Feb 10, 2016
Priority date	Mar 5, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.

First claim

The invention claimed is:

1. A bidirectional Zener diode, comprising:
a semiconductor substrate of a first conductivity type;
a first electrode and a second electrode which are defined on the semiconductor substrate;
a plurality of first diffusion regions of a second conductivity type, which are defined at a surface portion of the semiconductor substrate, to be connected to the first electrode; and
a plurality of second diffusion regions of a second conductivity type, which are defined at intervals from the first diffusion regions at the surface portion of the semiconductor substrate, to be connected to the second electrode, wherein
the first electrode includes a first extraction electrode which is defined so as to cover the plurality of first diffusion regions,
the second electrode includes second extraction electrodes which are defined so as to cover the plurality of second diffusion regions along an extracting direction of the first extraction electrode, and
the first extraction electrodes and the second extraction electrodes are defined so as to have a width wider than each width of the plurality of first diffusion regions and the plurality of second diffusion regions.

2. The bidirectional Zener diode according to claim 1 , wherein a plurality of the first extraction electrodes and a plurality of the second extraction electrodes are defined in comb-teeth shapes engaging with each other.

3. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions are arrayed along the extracting direction of the first extraction electrodes and the second extraction electrodes.

4. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions are defined so as to be adjacent to one another along a direction perpendicular to the extracting direction of the first extraction electrodes and the second extraction electrodes.

5. The bidirectional Zener diode according to claim 1 further comprising an insulating film which covers the surface of the semiconductor substrate, wherein
contact holes for selectively exposing the plurality of first diffusion regions and the plurality of second diffusion regions are defined in the insulating film.

6. The bidirectional Zener diode according to claim 5 , wherein each of the contact holes is defined so as to have a width narrower than each width of the plurality of first diffusion regions and the plurality of second diffusion regions.

7. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions are respectively defined so as to have the same area and the same depth.

8. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions respectively have parasitic capacitances equal to one another.

9. The bidirectional Zener diode according to claim 8 , wherein the parasitic capacitances are 1.0 pF.

10. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions have the same boundary length.

11. The bidirectional Zener diode according to claim 1 , wherein the plurality of first diffusion regions and the plurality of second diffusion regions are arrayed so as to be symmetrical.

12. The bidirectional Zener diode according to claim 1 , wherein
the respective boundary lengths of the first diffusion regions and the second diffusion regions are respectively 470 μm or more in planar view that the semiconductor substrate is viewed from a normal direction.

13. The bidirectional Zener diode according claim 12 , wherein the respective boundary lengths of the first diffusion regions and the second diffusion regions are respectively 2500 μm or less.

14. The bidirectional Zener diode according claim 12 , wherein the respective areas of the first diffusion regions and the second diffusion regions are respectively 6000 μm 2 to 32000 μm 2 .

Assignees

• Rohm Co Ltd

Inventors

• Yamamoto Hiroki

Classifications

• H01L27/0255

  Electricity · mapped topic

• H01L29/747

  Electricity · mapped topic

• H01L29/66106

  Electricity · mapped topic

• H01L29/0692

  Electricity · mapped topic

• H01L29/866 Primary

  Electricity · mapped topic