Thin-film transistor and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9825180-B2
Application number	US-201615248567-A
Country	US
Kind code	B2
Filing date	Aug 26, 2016
Priority date	May 9, 2013
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode ( 108 ), a drain electrode ( 109 ), a semiconductor layer ( 105 ), a gate electrode ( 103 ), and an insulating layer ( 104 ); wherein the semiconductor layer ( 105 ) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer ( 104 ) is provided with an SiO 2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO 2 layer and the high-permittivity layers are used to control the threshold voltage.

First claim

The invention claimed is:

1. A thin-film transistor comprising:
a source electrode and a drain electrode;
a semiconductor layer provided in contact with the source electrode and the drain electrode;
a gate electrode provided corresponding to a channel between the source electrode and the drain electrode; and
an insulating layer provided between the gate electrode and the semiconductor layer,
wherein the insulating layer has a layer stack arranged in an order of, from the gate electrode side or the semiconductor layer side, a silicon oxide layer, a high-permittivity first layer provided in contact with the silicon oxide layer and having a permittivity higher than that of the silicon oxide layer, and a high-permittivity second layer having a permittivity higher than that of the high-permittivity first layer.

2. The thin-film transistor according to claim 1 , wherein the high-permittivity first layer is formed of at least one metal oxide selected from the group consisting of aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, tantalum oxide, niobium oxide, rare-earth oxide, magnesium oxide and strontium oxide, silicate oxide or silicon oxynitride.

3. The thin-film transistor according to claim 1 , wherein a thickness of the high-permittivity first layer is 0.6 nm or more.

4. The thin-film transistor according to claim 1 , wherein a thickness of the silicon oxide film is 0.6 nm or more.

Assignees

• Nat Inst Materials Science

Inventors

• Nabatame Toshihide
• Tsukagoshi Kazuhito
• Aikawa Shinya
• Chikyo Toyohiro

Classifications

• H10P95/50

  Alloying conductive materials with semiconductor bodies · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H01L21/40

  Electricity · mapped topic