OLED display substrate and method for manufacturing the same, and display apparatus

Patent metadata

Field	Value
Publication number	US-9825106-B2
Application number	US-201615244930-A
Country	US
Kind code	B2
Filing date	Aug 23, 2016
Priority date	Mar 16, 2016
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The present disclosure discloses an OLED display substrate and a manufacturing method thereof, and a display apparatus. The OLED display substrate is a top emitting OLED display substrate, and comprises a reflective layer covering side surfaces of a pixel defining layer, thus the reflective layer and a first electrode of the OLED form a reflective cup which increases the reflection of light emitted from the OLED.

First claim

What is claimed is:

1. An organic light-emitting diode (OLED) display substrate, comprising a pixel defining layer arranged on a base and configured to define pixel regions, each of the pixel regions being provided with an OLED comprising a first electrode, an organic light-emitting layer and a second electrode arranged on the base in sequence;
wherein side surfaces of the pixel defining layer, adjacent to an upper surface of the pixel defining layer which is away from the base, are covered with a reflective layer, and the first electrode is made of a reflective material; and
wherein the pixel defining layer comprises a first insulating layer and a second insulating layer arranged on the base in sequence, a first orthographic projection of the first insulating layer on the base is located within a second orthographic projection of the second insulating layer on the base, and there is a distance between edges of the first orthographic projection and the second orthographic projection.

2. The OLED display substrate according to claim 1 , wherein the reflective layer is made of a conductive material, and the first electrode and the reflective layer are disconnected from each other.

3. The OLED display substrate according to claim 1 , wherein the reflective layer and the first electrode are arranged in a same layer.

4. The OLED display substrate according to claim 1 , wherein the second insulating layer has a greater thickness than the first insulating layer.

5. The OLED display substrate according to claim 3 , wherein the pixel region further comprises:
a thin film transistor;
a planarization layer covering the thin film transistor; and
a connection electrode arranged on the planarization layer and electrically connected with a drain electrode of the thin film transistor, and
wherein the first electrode is arranged on and in contact with the connection electrode.

6. The OLED display substrate according to claim 1 , wherein the first electrode is an anode of the OLED.

7. The OLED display substrate according to claim 2 , wherein the first electrode is an anode of the OLED.

8. A display apparatus comprising the display substrate according to claim 1 .

9. The display apparatus according to claim 8 , wherein the reflective layer is made of a conductive material, and the first electrode and the reflective layer are disconnected from each other.

10. The display apparatus according to claim 8 , wherein the reflective layer and the first electrode are arranged in a same layer.

11. The display apparatus according to claim 8 , wherein the second insulating layer has a greater thickness than the first insulating layer.

12. The display apparatus according to claim 10 , wherein the pixel region further comprises:
a thin film transistor;
a planarization layer covering the thin film transistor; and
a connection electrode arranged on the planarization layer and electrically connected with a drain electrode of the thin film transistor, and
wherein the first electrode is arranged on and in contact with the connection electrode.

13. The display apparatus according to claim 8 , wherein the first electrode is an anode of the OLED.

14. A method of manufacturing the OLED display substrate according to claim 1 , comprising steps of:
providing the base;
forming the pixel defining layer on the base to define the pixel regions;
forming the OLED comprising the first electrode, the organic light-emitting layer and the second electrode in each of the pixel regions;
forming a reflective layer on side surfaces of the pixel defining layer adjacent to an upper surface of the pixel defining layer which is away from the base; and
forming the first electrode by a process for patterning a conductive layer comprising a reflective material.

15. The manufacturing method according to claim 14 , wherein the reflective layer and the first electrode are formed by a process of patterning the same conductive reflective layer, and the first electrode and the reflective layer are disconnected from each other.

16. The manufacturing method according to claim 15 , wherein the step of forming the pixel defining layer comprises:
forming a first insulating layer and a second insulating layer on the base in sequence;
coating a photoresist on the second insulating layer, and subjecting it to exposure and development to form a photoresist-reserved region and a photoresist-unreserved region, wherein the photoresist-unreserved region is located at position corresponding to the pixel regions, and the photoresist-reserved region is located at position corresponding to other region;
removing the second insulating layer in the photoresist-unreserved region using a first wet etching process;
removing the first insulating layer in the photoresist-unreserved region using a second wet etching process, wherein the second wet etching process is carried out for a longer time than the first wet etching process;
removing the photoresist to form the pixel defining layer comprising the first insulating layer and the second insulating layer.

17. The manufacturing method according to claim 16 , wherein an etching solution used for both the first wet etching and the second wet etching is hydrofluoric acid.

18. The manufacturing method according to claim 16 , wherein the second insulating layer is made of Acrylic material, and the first insulating layer is a silicon nitride layer or a silicon oxide layer.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Li Yansong
• Xu Xiaowei
• Li Liangjian

Classifications

• H01L51/56

  Electricity · mapped topic

• H01L51/5271

  Electricity · mapped topic

• H01L27/3246 Primary

  Electricity · mapped topic

• H10K59/878

  comprising reflective means · CPC title

• H10K59/80518

  Reflective anodes, e.g. ITO combined with thick metallic layers · CPC title