Semiconductor device having low on resistance

Patent metadata

Field	Value
Publication number	US-9824996-B2
Application number	US-201514845357-A
Country	US
Kind code	B2
Filing date	Sep 4, 2015
Priority date	Jun 30, 2003
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor chip including a field effect transistor, having a main surface over which a source electrode and a gate electrode of the field effect transistor are formed, and having a second main surface on which a drain electrode of the field effect transistor is formed, the second main surface being opposed to the first main surface;
a metal-made support board having a top surface and a bottom surface opposite the top surface, the semiconductor chip being mounted over the top surface such that the drain electrode is fixed to the top surface of the metal-made support board via a conductive adhesive material;
a source lead electrically connected with the source electrode of the semiconductor chip via a plurality of source conductors;
a gate lead electrically connected with the gate electrode of the semiconductor chip via a gate conductor;
a drain lead formed contiguously with the metal-made support board; and
a sealing body sealing the semiconductor chip, and
wherein, in plan view, the metal-made support board has a first side and a second side opposite the first side,
wherein, in plan view, the sealing body having a third side that is extended along the first side of the metal-made support board,
wherein, in plan view, the first side of the metal-made support board is located between the second side of the metal-made support board and the third side of the sealing body,
wherein, in plan view, the source lead, the gate lead, and the drain lead are located outside of the metal-made support board, located alongside the first side of the metal-made support board, and not located alongside the second side of the metal-made support board,
wherein, in plan view, each of the plurality of source conductors and the gate conductor intersects with the first side of the metal-made support board,
wherein, in plan view, each of the source lead, the gate lead, and the drain lead intersects with the third side of the sealing body,
wherein, in plan view, the plurality of source conductors includes a first source conductor that is most proximate to the gate conductor among the plurality of source conductors,
wherein the gate conductor has a connecting portion connected to the gate electrode,
wherein the first source conductor has a connecting portion connected to a part of the source electrode,
wherein the connecting portion of the first source conductor has a first end corresponding to an end of the first source conductor, and
wherein, in plan view, a part of the connecting portion of the gate conductor is located between the first end of the connecting portion of the first source conductor and the second side of the metal-made support board in a first direction that is perpendicular to the first side of the metal-made support board.

2. The semiconductor device according to claim 1 , wherein a cross-sectional area of each of the plurality of source conductors is greater than a cross-sectional area of the gate conductor.

3. The semiconductor device according to claim 2 , wherein, in plan view, the semiconductor chip has a first chip side that is extended along the first side of the metal-made support board, and a second chip side that is crossed with the first chip side and is extended in the first direction,
wherein, in plan view, the first chip side of the semiconductor chip is located between the source electrode and the first side of the metal-made support board,
wherein, in plan view, the plurality of source conductors intersects with the first chip side of the semiconductor chip, and
wherein, in plan view, the gate conductor intersects with the second chip side of the semiconductor chip.

4. The semiconductor device according to claim 1 , wherein each of the plurality of source conductors is comprised of a wire, and wherein the gate conductor is comprised of a wire.

5. The semiconductor device according to claim 1 , wherein each of the plurality of source conductors and the gate conductor is made from aluminum (Al).

6. The semiconductor device according to claim 1 , wherein the source electrode and the gate electrode are each made from aluminum (Al).

7. The semiconductor device according to claim 1 , wherein, in the plan view, the first end of the connecting portion of the first source conductor is extended along the first side of the metal-made support board.

8. The semiconductor device according to claim 1 , wherein, in plan view, the sealing body having a fourth side that is opposite to the third side of sealing body, wherein, in plan view, the second side of the metal-made support board is exposed from the sealing body, and wherein, in plan view, the fourth side of the sealing body is located between the second side of the metal-made support board and the first side of the metal-made support board.

9. A semiconductor device, comprising:
a semiconductor chip including a field effect transistor, having a first main surface over which a source electrode and a gate electrode of the field effect transistor are formed, and having a second main surface on which a drain electrode of the field effect transistor is formed, the second main surface being opposed to the first main surface;
a metal-made support board having a top surface and a bottom surface opposite the top surface, the semiconductor chip being mounted over the top surface such that the drain electrode is fixed to the top surface of the metal-made support board via a conductive adhesive material;
a source lead electrically connected with the source electrode of the semiconductor chip via a plurality of source conductors;
a gate lead electrically connected with the gate electrode of the semiconductor chip via a gate conductor;
a drain lead formed contiguously with the metal-made support board; and
a sealing body sealing the semiconductor chip, and
wherein, in plan view, the metal-made support board has a first side and a second side opposite the first side,
wherein, in plan view, the sealing body having a third side that is extended along the first side of the metal-made support board,
wherein, in plan view, the first side of the metal-made support board is located between the second side of the metal-made support board and the third side of the sealing body,
wherein, in plan view, the source lead, the gate lead, and the drain lead are located outside of the metal-made support board, located alongside the first side of the metal-made support board, and not located alongside the second side of the metal-made support board,
wherein, in plan view, each of the source lead, the gate lead, and the drain lead intersects with the third side of the sealing body,
wherein, in plan view, each of the plurality of source conductors and the gate conductor intersects with the first side of the metal-made support board,
wherein, in plan view, the plurality of source conductors includes a first source conductor that is most proximate to the gate conductor among the plurality of source conductors,
wherein the first source conductor has a connecting portion connected to a part of the source electrode,
wherein the connecting portion of the first source conductor has a first end corresponding to an end of the first source conductor, and
wherein, in plan view, a part of the gate conductor is located between the first end of the connecting portion of the first source conductor and the second side of the metal-made support board in a first direction that is perpendicular to the first side of the metal-made support board.

10. The semiconductor device according to claim 9 , wherein a cross-sectional area of each of the plurality of source conductors is greater than a cross-sectional area of the gat

Assignees

• Renesas Electronics Corp

Inventors

• Satou Yukihiro
• Hata Toshiyuki

Classifications

• H10W72/07653

  changes in shapes · CPC title

• H10W72/534

  being rectangular · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/871

  Bond wires and strap connectors · CPC title