Deposition method and focused ion beam system

Patent metadata

Field	Value
Publication number	US-9824856-B2
Application number	US-201514956725-A
Country	US
Kind code	B2
Filing date	Dec 2, 2015
Priority date	Dec 3, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

First claim

What is claimed is:

1. A deposition method that is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method comprising:
a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and
a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

2. The deposition method as defined in claim 1 ,
wherein the first deposition film-depositing step deposits the first deposition film while decreasing the defocus amount with passing of time.

3. The deposition method as defined in claim 1 ,
wherein the first deposition film-depositing step deposits the first deposition film while linearly decreasing the defocus amount.

4. The deposition method as defined in claim 1 ,
wherein the first deposition film-depositing step deposits the first deposition film while curvilinearly decreasing the defocus amount.

5. A focused ion beam system comprising:
a focused ion beam optical system that focuses an ion beam, and applies the focused ion beam to a specimen;
a gas supply section that supplies a compound gas to the specimen; and
a control section that controls the focused ion beam optical system,
the control section including a stored program and processor for executing the stored program: said stored program defining a first process in which the ion beam that is defocused with respect to the specimen is applied to the specimen to which the compound gas is supplied, by controlling the focused ion beam optical system; and a second process in which the ion beam that is smaller in defocus amount than that used during the first process is applied to the specimen to which the compound gas is supplied, by controlling the focused ion beam optical system.

6. The focused ion beam system as defined in claim 5 ,
wherein the first process directed by the stored program decreases the defocus amount with passing of time by controlling the focused ion beam optical system.

7. The focused ion beam system as defined in claim 5 ,
wherein the first process directed by the stored program linearly decreases the defocus amount by controlling the focused ion beam optical system.

8. The focused ion beam system as defined in claim 5 ,
wherein the first process directed by the stored program curvilinearly decreases the defocus amount by controlling the focused ion beam optical system.

Assignees

• Jeol Ltd

Inventors

• Kadoi Misumi

Classifications

• C23C16/047 Primary

  using irradiation by energy or particles · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C14/221

  Ion beam deposition (C23C14/46, C23C14/48 take precedence) · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• H01J37/3178

  for applying thin layers on objects · CPC title