Capacitor of variable capacity, comprising a layer of a phase change material, and method for varying the capacity of a capacitor

Patent metadata

Field	Value
Publication number	US-9824825-B2
Application number	US-201514965004-A
Country	US
Kind code	B2
Filing date	Dec 10, 2015
Priority date	Dec 10, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The invention relates to a variable-capacitance electrical capacitor comprising a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes characterized in that the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode facing the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary the electrically active surface area of the second electrode.

First claim

The invention claimed is:

1. A variable-capacitance electrical capacitor, comprising at least a first stack including a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes,
wherein the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other hand, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode respectively facing the first electrode according to a fixed orientation relative to the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary an electrically active surface area of the second electrode.

2. The capacitor according to claim 1 wherein the additional electrode comprises a layer of electrically conductive material arranged such that the state-change material is placed at least partially between the primary electrode and the layer of electrically conductive material of the additional electrode along a direction in respect of a thickness of the first stack.

3. The capacitor according to claim 1 wherein the primary electrode and the additional electrode have superimposed surfaces in contact with one another.

4. The capacitor according to claim 1 wherein the first electrode comprises a first layer of electrically conductive material and a second layer of electrically conductive material electrically connected so as to encase the zone of dielectric material, which is encasing the second electrode.

5. The capacitor according to claim 1 wherein the primary electrode and the additional electrode are at least partially in the same plane.

6. The capacitor according to claim 1 wherein the state-change material comprises a discontinuous layer forming patches placed in a dielectric material matrix.

7. The capacitor according to claim 6 wherein the primary electrode is a discontinuous layer configured to allow an at least partial overlap with the discontinuous layer of state-change material.

8. The capacitor according to claim 2 wherein the layer of electrically conductive material of the additional electrode is a discontinuous layer configured to allow an at least partial overlap with a discontinuous layer of the state-change material.

9. The capacitor according to claim 1 wherein the state-change material is a bistable material.

10. A device comprising a capacitor according to claim 1 and control means of the state of the state-change material.

11. The device according to claim 6 comprising an independent control means of the state of the state-change material for each patch.

12. The device according to claim 10 comprising a capacitor wherein the additional electrode comprises a layer of electrically conductive material arranged such that the state-change material is placed at least partially between the primary electrode and the layer of electrically conductive material of the additional electrode along a direction in respect of a thickness of the first stack, and wherein the control means are configured to apply a difference in potential between the primary electrode and the layer of electrically conductive material of the additional electrode.

13. The device according to claim 10 , wherein the control means comprise a heat source configured to generate heating of the state-change material.

14. The device according to claim 13 wherein the heat source comprises a light source.

15. A variable-capacitance electrical capacitor, comprising at least:
a first stack including a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes, first stack wherein the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode respectively facing the first electrode according to a fixed orientation relative to the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary an electrically active surface area of the second electrode,
a second stack comprising a third electrode and a fourth electrode facing the third electrode and a zone of a dielectric material arranged between said third and fourth electrodes, the fourth electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material of the second stack, the primary electrode and the additional electrode of the fourth electrode respectively facing the third electrode, said state-change material of the second stack being arranged at least partially in contact with the primary electrode of the fourth electrode and being configured to alternatively adopt a high-resistivity state wherein the additional electrode of the fourth electrode is electrically insulated from the primary electrode of the fourth electrode and a low-resistivity state wherein the additional electrode of the fourth electrode is in electrical conduction with the primary electrode of the fourth electrode so as to vary the electrically active surface area of the fourth electrode,
and wherein a part of the first electrode of the first stack forms the primary electrode of the second stack.

16. The capacitor according to claim 15 wherein the first electrode of the first stack comprises a first layer of electrically conductive material and a second layer of electrically conductive material electrically connected so as to encase the third electrode of the second stack and a zone of dielectric material and wherein the primary electrode of the second stack is formed by a second layer of electrically conductive material of the first electrode of the first stack.

17. The capacitor according to claim 15 , wherein the third electrode of the second stack is electrically connected to the primary electrode of the first stack, so as to encase the fourth electrode of the second stack.

18. A method for varying the capacitance of a variable-capacitance capacitor, which includes at least a first stack including a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes, wherein the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other hand, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode respectively facing the first electrode according to a fixed orientation relative to the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively ado

Assignees

• Commissariat Energie Atomique

Inventors

• Reig Bruno
• Bastien Jean-Claude

Classifications

• H01G7/06 Primary

  having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors (electrets H01G7/02) · CPC title

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01L45/1233

  Electricity · mapped topic

• H01L45/085

  Electricity · mapped topic

• H01L45/06

  Electricity · mapped topic