System and method to generate a random number

Patent metadata

Field	Value
Publication number	US-9824735-B1
Application number	US-201615237078-A
Country	US
Kind code	B1
Filing date	Aug 15, 2016
Priority date	Aug 15, 2016
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

An apparatus includes a perpendicular magnetic tunnel junction (MTJ) including a free layer. The apparatus includes a spin orbit torque metal layer coupled to the perpendicular MTJ and configured to change a magnetization state of the free layer responsive to flow of a current along the spin orbit torque metal layer. The apparatus includes a random number generator configured to generate a random number at least partially based on a state of the perpendicular MTJ.

First claim

What is claimed is:

1. An apparatus comprising:
a perpendicular magnetic tunnel junction (MTJ) including a free layer;
a spin orbit torque metal layer coupled to the perpendicular MTJ and configured to change a magnetization state of the free layer responsive to flow of an in-plane current along the spin orbit torque metal layer;
a current source configured to apply a current to the spin orbit torque metal layer causing the free layer to have a first magnetization orientation during a first time period and to discontinue application of the current to the spin orbit torque metal layer causing the free layer to have a second magnetization orientation during a second time period following the first time period; and
a random number generator configured to generate a random number at least partially based on a state of the perpendicular MTJ.

2. The apparatus of claim 1 , wherein the spin orbit torque metal layer is substantially non-magnetic, and wherein the spin orbit torque metal layer is configured to exert a spin orbit torque on the free layer responsive to the flow of the current along spin orbit torque metal layer.

3. The apparatus of claim 1 , wherein application of the current to the spin orbit torque metal layer produces the current flow along the spin orbit torque metal layer during the first time period.

4. The apparatus of claim 3 , wherein the random number is based on whether the perpendicular MTJ has a parallel state or an anti-parallel state.

5. The apparatus of claim 3 , wherein the current source is configured to apply the current during the first time period in the absence of application of a bias magnetic field to the perpendicular MTJ.

6. The apparatus of claim 4 , wherein the current source is configured to discontinue application of the current during the second time period in the absence of application of a bias magnetic field.

7. The apparatus of claim 3 , wherein the first magnetization orientation comprises a substantially in-plane magnetization orientation and the second magnetization orientation comprises a substantially perpendicular magnetization orientation.

8. The apparatus of claim 1 , further comprising:
a bit line; and
a diode coupled between the perpendicular MTJ and the bit line.

9. The apparatus of claim 8 , further comprising:
one or more additional perpendicular MTJs coupled to the spin orbit torque metal layer;
one or more additional bit lines; and
one or more additional diodes coupled between the one or more additional perpendicular MTJs and the one or more additional bit lines.

10. A method comprising:
changing a magnetization state of a free layer of a perpendicular magnetic tunnel junction (MTJ) responsive to flow of an in-plane current along a spin orbit torque metal layer that is coupled to the perpendicular MTJ, wherein changing the magnetization state of the free layer includes applying a current to the spin orbit torque metal layer causing the free layer to have a first magnetization orientation during a first time period and discontinuing application of the current to the spin orbit torque metal layer causing the free layer to have a second magnetization orientation during a second time period following the first time period; and
generating a random number based at least in part on a state of the perpendicular MTJ.

11. The method of claim 10 , wherein application of the current to the spin orbit torque metal layer results in the current flow along the spin orbit torque metal layer.

12. The method of claim 11 , wherein the first magnetization orientation comprises a substantially in-plane magnetization orientation and the second magnetization orientation comprises a substantially perpendicular magnetization orientation.

13. The method of claim 12 , wherein application of the current to the spin orbit torque metal layer during the first time period results in a first state of the perpendicular MTJ corresponding to a first logical value, and further comprising:
applying the current to the spin orbit torque metal layer during a third time period following the second time period; and
discontinuing application of the current to the spin orbit torque metal layer during a fourth time period following the third time period,
wherein the current applied during the first time period is substantially equal to the current applied during the third time period, and
wherein the application and discontinuation of the current during the third time period and the fourth time period results in a second state of the perpendicular MTJ corresponding to a second logical value.

14. The method of claim 12 , wherein application of the current to the spin orbit torque metal layer is discontinued, during the second time period, in the absence of application of a bias magnetic field to the perpendicular MTJ.

15. The method of claim 11 , wherein applying, during the first time period, the current to the spin orbit torque metal layer changes a magnetization of a second free layer of a second perpendicular MTJ coupled to the spin orbit torque metal layer responsive to the current flow along the spin orbit torque metal layer.

16. An apparatus comprising:
a first perpendicular magnetic tunnel junction (MTJ) including a first free layer;
a second perpendicular MTJ including a second free layer;
a word line;
a spin orbit torque metal layer coupled to the first free layer, to the second free layer, and to the word line, the spin orbit torque metal layer configured to change a magnetization state of the first free layer and the second free layer responsive to flow of a current along the spin orbit torque metal layer; and
a current source configured to apply a current to the spin orbit torque metal layer during a first time period and to discontinue application of the current to the spin orbit torque metal layer during a second time period following the first time period, wherein at least one of the first and second perpendicular MTJ is configured to have a first magnetization orientation during the first time period and a second magnetization orientation during the second time period.

17. The apparatus of claim 16 , further comprising:
a first bit line; and
a first diode coupled between the first perpendicular MTJ and the first bit line.

18. The apparatus of claim 17 , further comprising:
a second bit line; and
a second diode coupled between the second perpendicular MTJ and the second bit line.

19. The apparatus of claim 18 , further comprising:
a third perpendicular MTJ including a third free layer;
a second word line; and
a second spin orbit torque metal layer coupled to the third perpendicular MTJ and to the second word line, the second spin orbit torque metal layer configured to change a magnetization state of the third free layer responsive to flow of a current along the second spin orbit torque metal layer.

20. The apparatus of claim 19 , further comprising a third diode coupled between the third perpendicular MTJ and the first bit line.

21. An apparatus comprising:
means for indicating a logical value based on an orientation of a magnetization of a layer of the means for indicating;
means for inducing a spin orbit torque responsive to flow of an in-plane current along the means for inducing, the means for inducing coupled to the means for indicating a logical value;
means for supplying current to:
apply a current to the means for inducing causing the layer to have a first magnetization orientation during a first time period; and
discontinue a

Assignees

• Qualcomm Inc

Inventors

• Kan Jimmy Jianan
• Park Chando
• Wang Peiyuan
• Kang Seung Hyuk

Classifications

• G11C11/1697

  Power supply circuits · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G06F7/588

  Random number generators, i.e. based on natural stochastic processes · CPC title

• G11C11/18 Primary

  using Hall-effect devices · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title