Nucleation layer for thin film metal layer formation

US9822454B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9822454-B2
Application numberUS-51998307-A
CountryUS
Kind codeB2
Filing dateDec 28, 2007
Priority dateDec 28, 2006
Publication dateNov 21, 2017
Grant dateNov 21, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied metal layer in a more uniform or more dense fashion, or promotes earlier formation (viz., at a thinner applied thickness) of a continuous metal layer. The resulting films have high visible light transmittance and low electrical resistance.

First claim

Opening claim text (preview).

We claim: 1. A conductive film comprising a flexible polymer support; a discontinuous seed layer as a series of islands having a physical thickness less than 3 nanometers and comprising a mixture selected from two or more of gallium oxide, indium oxide, magnesium oxide, zinc oxide, and tin oxide on the support; and a visible light-transmissive metal layer atop the seed layer. 2. The film of claim 1 , further comprising an organic support coating between the support and the seed layer. 3. The film of claim 1 , wherein the seed layer comprises indium oxide:zinc oxide, indium oxide:tin oxide, or indium gallium zinc oxide. 4. The film of claim 1 , wherein the metal layer physical thickness is about 5 to about 50 nm. 5. The film of claim 1 , wherein the film has at least about 70% visible light transmittance and less than about 20 ohms per square sheet resistivity. 6. The film of claim 1 , wherein the film has from about 7.5 to about 15 ohms per square sheet resistivity. 7. The film of claim 1 , wherein the seed layer comprises zinc oxide. 8. The film of claim 7 , wherein the zinc oxide is doped with aluminum or aluminum oxide. 9. The film of claim 1 , further comprising a second discontinuous seed layer as a series of islands atop the metal layer and a second metal layer atop the second discontinuous seed layer. 10. The film of claim 9 , wherein the metal layers are separated by a polymeric spacing layer and provide an infrared-rejecting Fabry-Perot stack. 11. The film of claim 9 , further comprising third, fourth, fifth or sixth discontinuous seed layers as a series of islands and third, fourth, fifth or sixth metal layers atop the second metal layer, wherein the metal layers are separated by polymeric spacing layers and provide an infrared-rejecting Fabry-Perot stack. 12. An electrical device comprising the film of claim 1 . 13. A method for forming a conductive film on a flexible polymer support, which method comprises: a) forming on the flexible polymer support or on an organic support coating on the flexible polymer support, a discontinuous seed layer formed as a series of islands having a physical thickness less than 3 nanometers and comprising a mixture selected from two or more of gallium oxide, indium oxide, magnesium oxide, zinc oxide, and tin oxide; and b) depositing a visible light-transmissive metal layer over the seed layer. 14. The method of claim 13 , wherein the seed layer comprises zinc oxide. 15. The method of claim 13 , wherein the seed layer is formed using a sputtering target comprising zinc oxide:alumina, indium oxide:zinc oxide, indium oxide:tin oxide, indium oxide:tin oxide:zinc oxide, indium:zinc, indium:tin, or indium gallium zinc oxide. 16. The method of claim 13 , wherein the metal layer comprises silver. 17. The method of claim 13 , wherein the metal layer physical thickness is about 5 to about 50 nm. 18. The method of claim 13 , wherein the film has at least about 70% visible light transmittance and less than about 20 ohms per square sheet resistivity. 19. The method of claim 13 , further comprising; c) forming a second discontinuous seed layer as a series of islands comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide, tin oxide or mixtures including mixed oxides or doped oxides thereof over the metal layer; and d) depositing a second visible light-transmissive metal layer over the second seed layer. 20. The method of claim 19 , further comprising forming a polymeric spacing layer between the metal layers to provide an infrared-rejecting Fabry-Perot stack. 21. A method for making a glazing article, which method comprises: a) assembling a layer of glazing material and a film comprising: a flexible polymer support; a discontinuous seed layer on the flexible polymer support or on an organic support coating on the flexible polymer support, formed as a series of islands having a physical thickness less than 3 nanometers and comprising a mixture selected from two or more of gallium oxide, indium oxide, magnesium oxide, zinc oxide, and tin oxide; and a visible light-transmissive metal layer atop the discontinuous seed layer; and b) bonding the glazing material and film together into a unitary article. 22. The method of claim 21 , wherein the glazing material comprises glass and the glazing article further comprises an energy-absorbing layer between the film and the glass. 23. The method of claim 21 , wherein the seed layer comprises indium oxide:zinc oxide, indium oxide:tin oxide, or indium gallium zinc oxide. 24. The method of claim 21 , further comprising at least a second discontinuous seed layer as a series of islands atop the metal layer and at least a second metal layer atop the second discontinuous seed layer, wherein the metal layers are separated by a polymeric spacing layer and provide an infrared-rejecting Fabry-Perot stack, and the metal layer physical thicknesses are about 5 to about 50 nm.

Assignees

Inventors

Classifications

  • comprising only one glass sheet · CPC title

  • Methods of surface bonding and/or assembly therefor · CPC title

  • reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection · CPC title

  • using layers comprising organic materials · CPC title

  • of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

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What does patent US9822454B2 cover?
A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied me…
Who is the assignee on this patent?
Stoss Walter, Bright Clark I, 3M Innovative Properties Co
What technology area does this patent fall under?
Primary CPC classification C23C28/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).