High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same

US9822430B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9822430-B2
Application numberUS-201314019615-A
CountryUS
Kind codeB2
Filing dateSep 6, 2013
Priority dateFeb 29, 2012
Publication dateNov 21, 2017
Grant dateNov 21, 2017

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Abstract

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High-density thermodynamically stable nanostructured copper-based metallic systems, and methods of making, are presented herein. A ternary high-density thermodynamically stable nanostructured copper-based metallic system includes: a solvent of copper (Cu) metal; that comprises 50 to 95 atomic percent (at. %) of the metallic system; a first solute metal dispersed in the solvent that comprises 0.01 to 50 at. % of the metallic system; and a second solute metal dispersed in the solvent that comprises 0.01 to 50 at. % of the metallic system. The internal grain size of the solvent is suppressed to no more than 250 nm at 98% of the melting point temperature of the solvent and the solute metals remain uniformly dispersed in the solvent at that temperature. Processes for forming these metallic systems include: subjecting powder metals to a high-energy milling process, and consolidating the resultant powder metal subjected to the milling to form a bulk material.

First claim

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The invention claimed is: 1. A process for forming a thermodynamically stable nanostructured copper-based metallic system comprising a solvent of copper (Cu) metal that comprises 50 to 99.98 atomic percent (at. %) of the metallic system; a first solute metal dispersed in the solvent metal that comprises 0.01 to 50 at. % of the metallic system; and a second solute metal dispersed in the solvent metal that comprises 0.01 to 50 at. % of the metallic system, the process comprising: subjecting powder metals of the solvent metal and the solute metals to a milling process using a milling device configured to shake the powder metals with ball media in a generally back and forth direction at least 1060 times per minute to impart impacts to its contents; and consolidating the resultant powder metal subjected to the milling to form a bulk material, wherein the bulk material remains thermally stable, with the absence of substantial gross grain growth, such that the internal grain size of the solvent metal is substantially suppressed to no more than about 250 nm at approximately 98% of the melting point temperature of the solvent metal and the solute metals remain substantially uniformly dispersed in the solvent metal at that temperature. 2. The process of claim 1 , wherein the bulk material formed comprises a pellet, bullet, ingot, bar, plate, disk, or sheet. 3. The process of claim 1 , wherein consolidating comprises pressure-less sintering, hot isostatic pressing, hot pressing, vacuum arc melting, field assisted sintering, dynamic compaction using explosives or forging-like operations, high pressure torsion, hot extrusion, cold extrusion, or equal channel angular extrusion. 4. The process of claim 3 , wherein the consolidating comprises vacuum arc melting. 5. The process of claim 4 , wherein the vacuum arc melting is performed in multiple steps, with the metal being rotated relative to the top and bottom of the arc melter apparatus after each step. 6. The process of claim 4 , further comprising: liquefying miscible and/or partially miscible metals first; and then liquefying immiscible metals. 7. The process of claim 6 , further comprising: heating the powdered metal to a temperature of about 90-95% of the melting point of pure Cu prior to consolidating. 8. The process of claim 3 , wherein the consolidating comprises equal channel angular extrusion (ECAE). 9. The process of claim 8 , wherein the ECAE is performed in multiple passes, with the bulk material being rotated by 90 or 180° after each pass. 10. The process of claim 3 , further comprising: placing the powdered metals into a cavity of billet of a metal or alloy; and sealing the powdered metals within said cavity prior to extrusion. 11. The process of claim 1 , wherein the milling produces the metallic system having an average grain size of no more than approximately 10 nm. 12. The process of claim 1 , wherein the milling device is a shaker mill. 13. The process of claim 1 , wherein the milling results in at least 2120 impacts a minute. 14. The process of claim 1 , wherein the ball-to-powder mass ratio utilized by the milling device is about 10:1 or more. 15. The process of claim 1 , wherein the milling ball media is comprised only of stainless steel. 16. The process of claim 1 , wherein the density of the bulk material is about 9.5 g/cm 3 or more. 17. The process of claim 1 , wherein the first solute metal is selected from the group consisting of: iron (Fe), molybdenum (Mo), and tantalum (Ta); and the second solute metal is selected from the group consisting of aluminum (Al), tantalum (Ta) and molybdenum (Mo), with the first and second solute metals being different. 18. The process of claim 1 , further comprising: cooling the metallic powders, during the milling process, to a cryogenic temperature. 19. The process of claim 1 , further comprising: mixing an additive or a surfactant with the metallic powders and ball media during the milling process. 20. The process of claim 1 , further comprising: forming the bulk material into a shaped charge liner. 21. A process for forming a thermodynamically stable nanostructured copper-based metallic system comprising a solvent of copper (Cu) metal that comprises 50 to 99.99 atomic percent (at. %) of the metallic system; and a solute metal dispersed in the solvent metal that comprises 0.01 to 50 at. % of the metallic system, the process comprising: subjecting powder metals of the solvent metal and the solute metal to a milling process using a milling device configured to shake the powder metals with ball media in a generally back and forth direction at least 1060 times per minute to impart impacts to its contents; and consolidating the resultant powder metal subjected to the milling to form a bulk material, wherein the bulk material remains thermally stable, with the absence of substantial gross grain growth, such that the internal grain size of the solvent metal is substantially suppressed to no more than about 250 nm at approximately 98% of the melting point temperature of the solvent metal and the solute metals remain substantially uniformly dispersed in the solvent metal at that temperature. 22. The process of claim 21 , wherein the metallic system is binary, ternary or higher. 23. The process of claim 21 , wherein the solute metal is selected from the group consisting of: tantalum (Ta), vanadium (V), iron (Fe), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium (Hf), and tungsten (W).

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Classifications

  • Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties · CPC title

  • Making amorphous alloys · CPC title

  • Supplementary information concerning processes or compositions relating to powder metallurgy · CPC title

  • Processes characterised by the sequence of their steps · CPC title

  • by ball milling · CPC title

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What does patent US9822430B2 cover?
High-density thermodynamically stable nanostructured copper-based metallic systems, and methods of making, are presented herein. A ternary high-density thermodynamically stable nanostructured copper-based metallic system includes: a solvent of copper (Cu) metal; that comprises 50 to 95 atomic percent (at. %) of the metallic system; a first solute metal dispersed in the solvent that comprises 0.…
Who is the assignee on this patent?
The United States Of America As Represented By Sec Of Army, Us Army
What technology area does this patent fall under?
Primary CPC classification C22C9/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 21 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).