Agglomerated boron nitride particles, composition containing said particles, and three-dimensional integrated circuit having layer comprising said composition

Patent metadata

Field	Value
Publication number	US-9822294-B2
Application number	US-201414290219-A
Country	US
Kind code	B2
Filing date	May 29, 2014
Priority date	Nov 29, 2011
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin.
A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m 2 /g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.

First claim

What is claimed is:

1. Agglomerated boron nitride particles which have a specific surface area from at least 10 m 2 /g to at most 30 m 2 /g and a total pore volume of at least 0.1 cm 3 /g and at most 2.15 cm 3 /g, and the surface of which is constituted by boron nitride primary particles having an average particles size of at least 0.05 μm and at most 1 μm.

2. The agglomerated boron nitride particles according to claim 1 , wherein the volume-based maximum particle size of the agglomerated boron nitride particles is within a range of at least 0.1 μm and at most 25 μm.

3. The agglomerated boron nitride particles according to claim 1 , wherein the bulk density is at least 0.3 g/cm 3 .

4. A composition, comprising:
a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s; and
a filler (B) comprising the agglomerated boron nitride particles as defined in claim 1 .

5. The composition according to claim 4 , which contains the filler (B) in an amount of at least 40 parts by weight and at most 400 parts by weight per 100 parts by weight of the resin (A).

6. The composition according to claim 1 , further comprising a curing agent (C).

7. The composition according to claim 4 , further comprising a flux (D).

8. The composition according to claim 4 , wherein the resin (A) is a thermosetting resin.

9. The composition according to claim 8 , wherein the thermosetting resin is an epoxy resin (a).

10. The composition according to claim 9 , wherein the epoxy resin (a) comprises an epoxy resin (al) having an epoxy equivalent of at least 100 g/equivalent and less than 650 g/equivalent.

11. The composition according to claim 9 , wherein the epoxy resin (a) comprises an epoxy resin (a2) having an epoxy equivalent of at least 650 g/equivalent and at most 30,000 g/equivalent.

12. The composition according to claim 9 , wherein the epoxy resin (a) is a phenoxy resin having at least one skeleton among a bisphenol A skeleton, a bisphenol F skeleton and a biphenyl skeleton.

13. A composition coating liquid, comprising:
the composition as defined in claim 4 ; and
an organic solvent (E).

14. A three-dimensional integrated circuit, comprising:
a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and a layer containing the composition as defined in claim 4 .

15. The agglomerated boron nitride particles according to claim 1 , having a specific surface area from at least 10 m 2 /g to at most 26.7 m 2 /g.

16. A process for producing the agglomerated boron nitride particles of claim 1 , comprising:
granulating a slurry containing a material boron nitride powder,
wherein the volume-based average particle size D 50 of the material boron nitride powder in the slurry is at most ⅕ of the volume-based average particle size D 50 of granulated particles.

17. The process for producing agglomerated boron nitride particles according to claim 16 , wherein the total oxygen content of the material boron nitride powder is at least 1 wt % and at most 10 wt %.

18. The process for producing agglomerated boron nitride particles according to claim 16 , wherein the material boron nitride powder satisfies the following conditions (1) and/or (2):
(1) the total pore volume is at most 1.0 cm 3 /g; and
(2) the specific surface area is at least 20 m 2 /g.

19. The process for producing agglomerated boron nitride particles according to claim 16 , wherein the slurry containing a material boron nitride powder is granulated into spherical particles by a spray drying method, and the obtained granulated particles are subjected to heat treatment in a non-oxidizing gas atmosphere.

20. The process for producing agglomerated boron nitride particles according to claim 16 , wherein the slurry containing a material boron nitride powder contains a metal oxide in an amount of at least 1 wt % and at most 30 wt % based on the material boron nitride powder.

21. A process for producing a three-dimensional integrated circuit, comprising:
forming a film of the composition coating liquid as defined in claim 13 on the surface of a plurality of semiconductor substrates; and pressure-bonding such semiconductor substrates.

22. A composition, comprising:
a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s; and
a filler (B) comprising boron nitride which has a crystallite size (Lc) of the 002 plane of at least 450 [Å], a crystallite size (La) of the 100 plane of at least 500 [Å], the crystallize size (Lc) and the crystallite size (La) satisfying the following formula (i), and has an oxygen content of at most 0.30 wt %:
0.70 ≦Lc/La   (i).

23. The composition according to claim 22 , wherein the volume average particle size of the filler (B) is at most 10 μm.

24. The composition according to claim 22 , which contains the filler (B) in an amount of at least 40 parts by weight and at most 400 parts by weight per 100 parts by weight of the resin (A).

Assignees

• Mitsubishi Chem Corp

Inventors

• Yamazaki Masanori
• Abe Mari
• Murase Tomohide
• Kawase Yasuhiro
• Ikemoto Makoto
• Kiritani Hideki
• Matsushita Yasunori

Classifications

• H10D84/01

  Manufacture or treatment · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• C01P2004/50

  Agglomerated particles · CPC title

• C01P2004/61

  Micrometer sized, i.e. from 1-100 micrometer · CPC title