Infrared sensor device and method for producing an infrared sensor device

Patent metadata

Field	Value
Publication number	US-9818792-B2
Application number	US-201314400461-A
Country	US
Kind code	B2
Filing date	Apr 19, 2013
Priority date	May 16, 2012
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.

First claim

The invention claimed is:

1. An infrared sensor device, comprising:
a semiconductor substrate;
a plurality of electrically conductive column lines and/or a plurality of electrically conductive row lines associated with the substrate;
at least one micromechanically formed sensor element in the semiconductor substrate;
at least one micromechanically formed calibration element in the semiconductor substrate, the calibration element being configured for the sensor element and including a diode region; and
a suspension arrangement supporting said sensor element and said calibration element relative to said semiconductor substrate,
wherein an absorber material is arranged on the semiconductor substrate in the region of the sensor element and of the calibration element,
wherein a cavern is respectively formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element,
wherein the sensor element and the calibration element are separated from the rest of the semiconductor substrate by the caverns,
wherein the calibration element is thermally coupled to the semiconductor substrate by thermal bridges, between regions of said column lines or row lines and said diode region;
wherein the sensor element is not thermally coupled to the semiconductor substrate by thermal bridges between regions of said column lines or row lines, and
wherein the thermal bridges are separate from said suspension arrangement.

2. The infrared sensor device as claimed in claim 1 , wherein the semiconductor substrate is a monocrystalline silicon substrate, and wherein at least one diode is respectively formed in the semiconductor substrate for the sensor element and for the calibration element.

3. The infrared sensor device as claimed in claim 1 , wherein the sensor element is fastened in two regions on the semiconductor substrate by a suspension arrangement.

4. The infrared sensor device as claimed in claim 3 , wherein the suspension arrangement is formed substantially symmetrically in the vertical direction, wherein an electrical conductive track in the suspension arrangement is arranged substantially centrally between two substantially equally thick layers of the absorber material, and wherein the conductive track is covered laterally by the absorber material.

5. The infrared sensor device as claimed in claim 3 , wherein the absorber material has a smaller layer thickness in the region of the suspension arrangement of the sensor element and at least a portion of the absorber material in the region of the diodes of the calibration element has a smaller thickness than in the rest of the calibration element.

6. The infrared sensor device as claimed in claim 1 , wherein an optical thickness of the absorber material arranged on the sensor element substantially corresponds to an odd multiple of one fourth of a wavelength of a radiation to be detected.

7. The infrared sensor device as claimed in claim 1 , wherein the absorber material is an oxide.

8. The infrared sensor device as claimed in claim 1 , wherein a reflector layer is arranged on the absorber material on an exposed surface of the sensor element.

9. The infrared sensor device as claimed in claim 4 , wherein a material of the electrical conductive track is at least one from the group: Ti, TiN, Ta, TaN and/or a combination of two or more of Ti, TiN, Ta, and TaN.

10. The infrared sensor device as claimed in claim 1 , wherein a focusing arrangement is formed substantially below the sensor element at the bottom of the cavern, the focusing arrangement being configured to focus the radiation to be detected by the sensor element.

11. The infrared sensor device as claimed in claim 1 , wherein the absorber material is formed with bumps on top on at least one section of a surface of the sensor element and of the calibration element.

12. An infrared sensor array having a plurality of electrically conductive column and row lines, comprising:
a plurality of infrared sensor devices, the infrared sensor devices including:
a semiconductor substrate;
at least one micromechanically formed sensor element in the semiconductor substrate;
at least one micromechanically formed calibration element in the semiconductor substrate, the calibration element being configured for the sensor element and including a diode region; and
a suspension arrangement supporting said sensor element and said calibration element relative to said semiconductor substrate,
wherein an absorber material is arranged on the semiconductor substrate in the region of the sensor element and of the calibration element,
wherein a cavern is respectively formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element,
wherein the sensor element and the calibration element are separated from the rest of the semiconductor substrate by the caverns,
wherein the calibration element is thermally coupled to the semiconductor substrate by thermal bridges, between column or row line regions and said diode region;
wherein the sensor element is not thermally coupled to the semiconductor substrate by thermal bridges between regions of said column lines or row lines, and
wherein the thermal bridges are separate from said suspension arrangement.

13. The infrared sensor array as claimed in claim 12 , wherein each row or column of the sensor array comprises at least one calibration element.

14. The infrared sensor device as claimed in claim 1 , wherein the thermal bridges contain a metal structure to increase the thermal conductivity.

15. The infrared sensor device as claimed in claim 1 , wherein the absorber material is a silicon oxide.

Assignees

• Bosch Gmbh Robert

Inventors

• Herrmann Ingo
• Sommer Edda
• Schelling Christoph
• Rettig Christian
• Hattass Mirko

Classifications

• H01L27/1467

  Electricity · mapped topic

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• H01L31/028

  Electricity · mapped topic

• G01J2005/067

  Physics · mapped topic

• H01L27/14629

  Electricity · mapped topic