Stacked memory chip having reduced input-output load, memory module and memory system including the same

Patent metadata

Field	Value
Publication number	US-9818707-B2
Application number	US-201514960909-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Dec 22, 2014
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A stacked memory chip includes a chip input-output pad unit, a first semiconductor die and a second semiconductor die. The chip input-output pad unit includes a chip command-address pad unit, a lower chip data pad unit and an upper chip data pad unit that are to be connected to an external device. The first semiconductor die electrically is connected to the chip command-address pad unit and the lower chip data pad unit and electrically disconnected from the upper chip data pad unit. The second semiconductor die electrically is connected to the chip command-address pad unit and the upper chip data pad unit and electrically disconnected from the lower chip data pad unit. The input-output load may be reduced by selectively connecting each of the stacked semiconductor dies to one of the lower chip data pad unit and the upper chip data pad unit.

First claim

What is claimed is:

1. A stacked memory chip comprising:
chip input-output (I/O) pads configured to connect to an external device, the chip I/O pads including a chip command-address pad, a lower chip data pad and an upper chip data pad; and
a plurality of semiconductor dies including a first semiconductor die and a second semiconductor die, each of the plurality of semiconductor dies including die I/O pads, a memory device, and a conversion block, the die I/O pads including a die command-address pad, a lower die data pad and an upper die data pad corresponding to the chip command-address pad, the lower chip data pad, and the upper chip data pad, respectively, the memory device having a memory core and an I/O buffer, the I/O buffer including a lower I/O buffer and an upper I/O buffer corresponding to the lower die data pad and the upper die data pad, respectively, the I/O buffer configured to buffer data exchanged between the memory core and the die I/O pads, and the conversion block configured to electrically connect one of the lower I/O buffer and the upper I/O buffer to the die I/O pads associated with a respective one of the semiconductor dies such that the first semiconductor die is electrically connected to the chip command-address pad and the lower chip data pad while being electrically isolated from the upper chip data pad, and the second semiconductor die is electrically connected to the chip command-address pad and the upper chip data pad while being electrically isolated from the lower chip data pad.

2. The stacked memory chip of claim 1 , wherein
the upper die data pad of the first semiconductor die is electrically disconnected from a memory device associated with the first semiconductor die such that the upper die data pad associated with the first semiconductor die is a floating node, and
the lower die data pad of the second semiconductor die is electrically disconnected from a memory device associated with the second semiconductor die such that the lower die data pad associated with the second semiconductor die is a floating node.

3. The stacked memory chip of claim 1 , wherein the plurality of semiconductor dies further include:
a third semiconductor die configured to electrically connect to the chip command-address pad and the lower chip data pad while being electrically isolated from the upper chip data pad; and
a fourth semiconductor die configured to electrically connect to the chip command-address pad and the upper chip data pad while being electrically isolated from the lower chip data pad.

4. The stacked memory chip of claim 3 , wherein
the first semiconductor die and the second semiconductor die are configured to receive a first common chip selection signal, and to simultaneously activate when the first common chip selection signal is activated, and
the third semiconductor die and the fourth semiconductor die are configured to receive a second common chip selection signal, and simultaneously activate when the second common chip selection signal is activated.

5. The stacked memory chip of claim 1 , wherein each of the first semiconductor die and the second semiconductor die include a first channel region and a second channel region, the first channel region configured to operate independently of the second channel region.

6. The stacked memory chip of claim 1 , wherein the stacked memory chip is configured to receive a command and an address through the chip command-address pad during a plurality of clock cycles.

7. A stacked memory chip comprising:
chip input-output (I/O) pads configured to connect to an external device, the chip I/O pads including a chip command-address pad, a lower chip data pad and an upper chip data pad; and
a plurality of semiconductor dies including,
a first semiconductor die configured to electrically connect to the chip command-address pad and the lower chip data pad while being electrically isolated from the upper chip data pad, and
a second semiconductor die configured to electrically connect to the chip command-address pad and the upper chip data pad while being electrically isolated from the lower chip data pad,

wherein each of the first semiconductor die and the second semiconductor die include,
die I/O pads, the die I/O pads including a die command-address pad, a lower die data pad and an upper die data pad corresponding to the chip command-address pad, the lower chip data pad, and the upper chip data pad, respectively,
a memory device having a memory core and an I/O buffer, the I/O buffer configured to buffer data exchanged between the memory core and the die I/O pads, the I/O buffer including a lower I/O buffer and an upper I/O buffer corresponding to the lower die data pad and the upper die data pad, respectively, and the memory core having a plurality of memory cells formed therein, and
a conversion block configured to electrically connect the I/O buffer to one of the lower die data pad and the upper die data pad.

8. The stacked memory chip of claim 7 , wherein the conversion block includes:
a switch block connected to the lower I/O buffer and the upper I/O buffer of a respective one of the plurality of semiconductor dies;
a first fuse array connected between the switch block and the lower die data pad of a respective one of the plurality of semiconductor dies; and
a second fuse array connected between the switch block and the upper die data pad of a respective one of the plurality of semiconductor dies, and
wherein the switch block is configured to cut one of the first fuse array and the second fuse array associated with a respective one of the plurality of semiconductor dies.

9. The stacked memory chip of claim 8 , wherein
the second fuse array of the first semiconductor die is cut such that the upper die data pad of the first semiconductor die is a floating node, and
the first fuse array of the second semiconductor die is cut such that the lower die data pad of the second semiconductor die is a floating node.

10. The stacked memory chip of claim 7 , wherein the conversion block is configured to electrically connect one of the lower I/O buffer and the upper I/O buffer to the die I/O pads associated with a respective one of the semiconductor dies in response to a path selection signal.

11. The stacked memory chip of claim 7 , wherein the I/O buffer is configured to enable one of the lower I/O buffer and the upper I/O buffer in response to a path selection signal.

12. The stacked memory chip of claim 7 , wherein the first semiconductor die and the second semiconductor die are configured to receive a common chip selection signal such that the first semiconductor die and the second semiconductor die simultaneously activate when the common chip selection signal is activated.

13. The stacked memory chip of claim 12 , further comprising:
a path controller configured to generate a path selection signal based on the common chip selection signal and a most significant address bit signal,
wherein the conversion block is configured to electrically connect one of the lower I/O buffer and the upper I/O buffer to the die I/O pads in response to the path selection signal.

14. The stacked memory chip of claim 7 , wherein the first semiconductor die and the second semiconductor die are both configured to receive a first chip selection signal and a second chip selection signal, and to simultaneously activate when one of the first chip selection signal and the second chip selection signal is activated.

15. The stacked memory chip of claim 14 , further comprising:
a path controller configured to generate a path selection signal based on the first chi

Assignees

• Oh Ki-Seok
• Hwang Doo-Hee
• Lee Dong-Yang
• Choi Jong-Hyun
• Samsung Electronics Co Ltd

Inventors

• Oh Ki-Seok
• Hwang Doo-Hee
• Lee Dong-Yang
• Choi Jong-Hyun

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/26

  the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape · CPC title

• H10W72/967

  Multiple bond pads having different functions · CPC title