Oxide TFT, preparation method thereof, array substrate, and display device

Patent metadata

Field	Value
Publication number	US-9818605-B2
Application number	US-201314387390-A
Country	US
Kind code	B2
Filing date	Jul 2, 2013
Priority date	Mar 1, 2013
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H 2 , Ar and O 2 . By depositing a channel layer in a first mixed gas containing H 2 , Ar and O 2 , the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.

First claim

The invention claimed is:

1. A preparation method of an Oxide TFT, comprising forming a gate electrode, a gate insulating layer, a channel layer as well as a source electrode and a drain electrode on a substrate,
wherein the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H 2 , Ar and O 2 ,
wherein forming of the channel layer comprises:
depositing a first amorphous oxide semiconductor film having a thickness of 50-80 nm in a mixed gas of Ar and O 2 ;
subsequently depositing a second amorphous oxide semiconductor film having a thickness of 10-20 nm in a mixed gas of Ar and H 2 , wherein during a transition period the mixed gas of Ar and O 2 is mixed with gases of Ar and H 2 , so that a final mixed gas of Ar and H 2 containing only Ar and H 2 is obtained after depositing the second amorphous oxide semiconductor film; and
conducting a patterning process on the first amorphous oxide semiconductor film and the second amorphous oxide semiconductor film to form the channel layer,
in the mixed gas of Ar and O 2 , Ar and O 2 are contained at a ratio of 15:1-20:1; in the mixed gas of Ar and H 2 , Ar and H 2 are contained at a ratio of 9:1-2:1.

2. The preparation method according to claim 1 , wherein the source electrode and the drain electrode are formed by depositing in a second mixed gas containing H 2 and Ar; the source electrode and the drain electrode are formed by using an amorphous oxide material which presents conductor characteristic.

3. The preparation method according to claim 1 , wherein, in the mixed gas of Ar and O 2 , Ar and O 2 are contained at a ratio of 19:1; in the mixed gas of Ar and H 2 , Ar and H 2 are contained at a ratio of 9:1.

4. The preparation method according to claim 2 , wherein forming of the source electrode and the drain electrode comprises:
depositing a first amorphous oxide film having a thickness of 10-20 nm in a mixed gas of Ar and H 2 which are contained at a ratio of 9:1-2:1;
subsequently depositing a second amorphous oxide film having a thickness of 180-200 nm in a mixed gas of Ar and H 2 which are contained at a ratio of 3:2-1:1; and
conducting a patterning process on the first amorphous oxide film and the second amorphous oxide film to form the source and the drain.

5. The preparation method according to claim 4 wherein, when depositing the first amorphous oxide film, Ar and H 2 are contained at a ratio of 2:1.

6. The preparation method according to claim 1 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

7. An array substrate, comprising an Oxide TFT according to claim 1 .

8. A display device, comprising the array substrate according to claim 7 .

9. The array substrate according to claim 7 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

10. The preparation method according to claim 2 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

11. The preparation method according to claim 1 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

12. The preparation method according to claim 3 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

13. The preparation method according to claim 4 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

14. The preparation method according to claim 5 , wherein the amorphous oxide material is Indium Gallium Zinc Oxide (IGZO).

15. A preparation method of an Oxide TFT, comprising forming a gate electrode, a gate insulating layer, a channel layer as well as a source electrode and a drain electrode on a substrate,
wherein the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H 2 , Ar and O 2 ,
wherein forming of the channel layer comprises:
depositing a first amorphous oxide semiconductor film in a mixed gas of Ar and O 2 ;
subsequently depositing a second amorphous oxide semiconductor film in a mixed gas of Ar and H 2 , wherein during a transition period the mixed gas of Ar and O 2 is mixed with gases of Ar and H 2 , so that a final mixed gas of Ar and H 2 containing only Ar and H 2 is obtained after depositing the second amorphous oxide semiconductor film; and
conducting a patterning process on the first amorphous oxide semiconductor film and the second amorphous oxide semiconductor film to form the channel layer.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Optoelectronics Tech Co Ltd
• Bejing Boe Optoelectronics Tech Co Ltd

Inventors

• Yan Changjiang
• Li Tiansheng
• Xu Shaoying
• Xie Zhenyu
• Chen Xu

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3234

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H10P14/3226

  Oxides · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/3426 Primary

  Oxides · CPC title