Quantum dot color filter substrate and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9817264-B2
Application number	US-201514914650-A
Country	US
Kind code	B2
Filing date	Dec 28, 2015
Priority date	Nov 13, 2015
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.

First claim

What is claimed is:

1. A manufacturing method for a quantum dot (QD) color filter (CF) substrate, which comprises:
Step 1: providing a substrate, the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
Step 2: forming a patterned red color-resist layer and a patterned green color-resist layer, and a patterned organic transparent color-resist layer respectively on each of the red sub-pixel areas, each of the green sub-pixel areas, and each of the blue sub-pixel areas of the substrate to obtain a color filter (CF) layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer; and forming a photo-resist protective layer on the CF layer;
Step 3: coating a layer of QD solution on the photo-resist protective layer, the QD solution being obtained by dispersing treated oil-soluble red and green QD materials in a solvent; heating the QD solution to make the solvent volatile; and repeating the steps of coating the QD solution and heating to make the solvent volatile a plurality of times to obtain a QD layer of uniform thickness;
Step 4: providing an organic transparent photo-resist material on the QD layer; using a lithography etching process to pattern the organic transparent photo-resist material; and removing a portion of the organic transparent photo-resist material located above the blue sub-pixel areas to obtain a photo-resist layer;
Step 5: using the photo-resist layer as a masking layer to use a quencher to quench QD fluorescence of the QD layer to perform selective quenching, wherein a portion of the QD layer located above the red sub-pixel areas and green sub-pixel areas is shielded by the photo-resist layer and is not quenched to become a first QD layer, and the red and green QD materials in a portion of the QD layer located above the blue sub-pixel areas are exposed through the removed portion of the organic transparent photo-resist material of the photo-resist layer and are quench to become a second QD layer; and
Step 6: coating a curing gel on the photo-resist layer and the QD layer; the curing gel forming a protective layer with the photo-resist layer after curing.

2. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein the solvent of the QD solution is petroleum ether, methylene chloride, or ethyl acetate.

3. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein the red and green QD materials in the QD solution comprise one or more of II-VI group QD material and III-V group QD material.

4. The manufacturing method for QD CF substrate as claimed in claim 3 , wherein the red and green QD materials in the QD solution comprise one or more of ZnCdSe 2 , CdSe, CdTe, InP, and InAs.

5. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein in Step 3, the QD layer has a thickness that is 0.5-5 μm.

6. The manufacturing method for QD CF substrate as claimed in claim 1 , wherein in Step 5, the quencher is an organic agent that absorbs electrons.

7. The manufacturing method for QD CF substrate as claimed in claim 6 , wherein the quencher is a non-polar solution of 12-alkyl mercaptan, 14-alkyl mercaptan, or pyridine; and the concentration of the quencher is 0.2-4 mol/L.

8. A quantum dot (QD) color filter (CF) substrate, which comprises: a substrate, a CF layer disposed on the substrate, a color-resist protective layer disposed on the CF layer, a QD layer disposed on the color-resist protective layer, and a protective layer disposed on the QD layer;
wherein the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas; the CF layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer disposed respectively on the each of the red sub-pixel areas, each of the green sub-pixel areas, and each of the blue sub-pixel areas;
the QD layer comprising: a first QD layer located on the red sub-pixel areas and green sub-pixel areas, and a second QD layer located on the blue sub-pixel areas; the QD layer being formed by making a solvent volatile from a QD solution mixing a red QD material and a green QD material; the red QD material and the green QD material in the first QD layer emitting red and green light respectively under excitement by blue light; the red QD material and the green QD material in the second QD layer not emitting light when excited; and
the QD CF substrate being used to a display using blue backlight.

9. The QD CF substrate as claimed in claim 8 , wherein the display is an liquid crystal display (LCD), an organic light-emitting diode (OLED) display, or a quantum dot light-emitting display (QLED) display.

10. The QD CF substrate as claimed in claim 8 , wherein the QD layer has a thickness that is 0.5-5 μm.

11. A manufacturing method for a quantum dot (QD) color filter (CF) substrate, which comprises:
Step 1: providing a substrate, the substrate comprising: red sub-pixel areas, green sub-pixel areas, and blue sub-pixel areas;
Step 2: forming a patterned red color-resist layer and a patterned green color-resist layer, and a patterned organic transparent color-resist layer respectively on each of the red sub-pixel areas, each of the green sub-pixel areas, and each of the blue sub-pixel areas of the substrate to obtain a color filter (CF) layer comprising a red color-resist layer, a green color-resist layer and an organic transparent layer; and forming a photo-resist protective layer on the CF layer;
Step 3: coating a layer of QD solution on the photo-resist protective layer, the QD solution being obtained by dispersing treated oil-soluble red and green QD materials in a solvent; heating the QD solution to make the solvent volatile; and repeating the steps of coating the QD solution and heating to make the solvent volatile a plurality of times to obtain a QD layer of uniform thickness;
Step 4: providing an organic transparent photo-resist material on the QD layer using a lithography etching process to pattern the organic transparent photo-resist material; and removing a portion of the organic transparent photo-resist material located above the blue sub-pixel areas to obtain a photo-resist layer;
Step 5: using the photo-resist layer as a masking layer to use a quencher to quench QD fluorescence of the QD layer to perform selective quenching, wherein a portion of the QD layer located above the red sub-pixel areas and green sub-pixel areas is shielded by the photo-resist layer and is not quenched to become a first QD layer, and the red and green QD materials in a portion of the QD layer located above the blue sub-pixel areas are exposed through the removed portion of the organic transparent photo-resist material of the photo-resist layer and are quench to become a second QD layer; and
Step 6: coating a curing gel on the photo-resist layer and the QD layer; the curing gel forming a protective layer with the photo-resist layer after curing;
wherein the solvent of the QD solution is petroleum ether, methylene chloride, or ethyl acetate;
wherein the red and green QD materials in the QD solution comprise one or more of II-VI group QD material and III-V group QD material;
wherein in Step 3, the QD layer has a thickness that is 0.5-5 μm; and
wherein in Step 5, the quencher is an organic agent that absorbs electrons.

12. The manufacturing method for QD CF substrate as claimed in claim 11 , wherein the red and green QD materials in the QD solution comprise one or more of ZnCdSe 2 , CdSe, CdTe, InP, and InAs.

13. The manufacturing method for QD CF substrate as claimed in claim 11 , wherein the quencher is a non-polar solution of 12-alkyl mercaptan,

Assignees

• Shenzhen China Star Optoelect

Inventors

• Li Dongze

Classifications

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02F1/133514

  Colour filters · CPC title

• H01L33/504

  Electricity · mapped topic

• G02F1/0063

  Optical properties, e.g. absorption, reflection or birefringence (materials for non-linear optics G02F1/355) · CPC title

• G02F2001/0155

  Physics · mapped topic