Photonic platform having light-transferring interlayer transitions

Patent metadata

Field	Value
Publication number	US-9817185-B2
Application number	US-201615002615-A
Country	US
Kind code	B2
Filing date	Jan 21, 2016
Priority date	Jan 21, 2016
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A silicon photonic platform includes a substrate supporting a buried oxide layer, an active silicon layer deposited on the buried oxide layer, a first silicon nitride layer separated from the active silicon layer by a first spacer, the first silicon nitride layer and the active silicon layer constituting a first light-transferring interlayer transition and a second silicon nitride layer covered by a cladding and separated from the first silicon layer by a second spacer, the second silicon nitride layer and the first silicon nitride layer constituting a second light-transferring interlayer transition. The second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing. The silicon nitride layers may be substituted with an equivalent dielectric with a similar refractive index and high optical transparency in the desired operating wavelength range.

First claim

The invention claimed is:

1. A silicon photonic platform comprising:
a substrate supporting a buried oxide layer;
an active silicon layer on the buried oxide layer;
a first waveguide layer separated from the active silicon layer by a first spacer, the first waveguide layer and the active silicon layer constituting a first light-transferring interlayer transition; and
a second waveguide layer separated from the first waveguide layer by a second spacer, the first waveguide layer and the second waveguide layer constituting a second light-transferring interlayer transition,
wherein the active silicon layer comprises first, second and third silicon waveguides, wherein the first and second silicon waveguides are disposed on opposite sides of the third silicon waveguide;
wherein the first light-transferring interlayer transition comprises first and second waveguide sections in the first waveguide layer, wherein the first waveguide section is optically coupled to the first silicon waveguide through the first spacer, and wherein the second waveguide section is optically coupled to the second silicon waveguide through the first spacer; and
wherein the second light-transferring interlayer transition comprises a third waveguide section in the second waveguide layer, wherein the third waveguide section is optically coupled at its opposed ends to the first and second waveguide sections through the second spacer, so as to optically couple the first and second silicon waveguides over and across the third silicon waveguide.

2. The platform of claim 1 wherein the first waveguide layer is a first silicon nitride layer and the second waveguide layer is a second silicon nitride layer.

3. The platform of claim 1 wherein the first and second waveguide layers are made of a dielectric material having a refractive index within +/−20% of the refractive index of silicon nitride.

4. The platform of claim 2 wherein the second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing.

5. The platform of claim 2 wherein the interlayer transitions comprise adiabatic tapers.

6. The platform of claim 5 wherein the adiabatic tapers have a taper length of 50 to 150 μm.

7. The platform of claim 2 wherein the substrate is made of silicon and wherein the buried oxide layer, the first spacer, the second spacer and the cladding are made of silica.

8. The platform of claim 2 wherein the first and second silicon nitride layers are thicker than the active silicon layer.

9. The platform of claim 2 wherein the first and second silicon nitride layers are thicker than the first and second spacers.

10. The platform of claim 2 wherein the first and second spacers are equally thick.

11. The platform of claim 2 wherein the buried oxide layer has a thickness of 2-3 μm +/−20%.

12. The platform of claim 2 wherein each of the first and second spacers has a thickness of 200 nm +/−20% and wherein the active silicon layer has a thickness of 150 nm +/−20%.

13. The platform of claim 2 wherein at least one of the first and second silicon nitride layers is partially etched.

14. The platform of claim 1 , wherein the first and second waveguide sections each comprise tapered ends for adiabatic optical coupling to the respective first and second silicon waveguides.

15. The platform of claim 14 , wherein the third waveguide section comprises tapered ends for adiabatic optical coupling to the respective first and second waveguide sections.

16. A photonic switch comprising:
a substrate supporting a buried oxide layer;
an active silicon layer on the buried oxide layer;
a first waveguide layer separated from the active silicon layer by a first spacer, the first waveguide layer and the active silicon layer defining a first interlayer transition across which light couples; and
a second waveguide layer separated from the first waveguide layer by a second spacer, the first waveguide layer and the second waveguide layer defining a second interlayer transition across which light couples, wherein the second waveguide layer traverses one or more waveguides in the active silicon layer to thereby define a waveguide crossing,
wherein the active silicon layer comprises first, second and third silicon waveguides, wherein the first and second silicon waveguides are disposed on opposite sides of the third silicon waveguide;
wherein the first light-transferring interlayer transition comprises first and second waveguide sections in the first waveguide layer, wherein the first waveguide section is optically coupled to the first silicon waveguide through the first spacer, and wherein the second waveguide section is optically coupled to the second silicon waveguide through the first spacer; and
wherein the second light-transferring interlayer transition comprises a third waveguide section in the second waveguide layer, wherein the third waveguide section is optically coupled at its opposed ends to the first and second waveguide sections through the second spacer, so as to optically couple the first and second silicon waveguides over and across the third silicon waveguide.

17. The switch of claim 16 wherein the first waveguide layer is a first silicon nitride layer and wherein the second waveguide layer is a second silicon nitride layer.

18. The switch of claim 17 wherein the interlayer transitions comprise adiabatic tapers.

19. The switch of claim 18 wherein the adiabatic tapers have a taper length of 100 to 150 μm.

20. The switch of claim 17 wherein the first and second silicon nitride layers are thicker than the active silicon layer.

21. The switch of claim 17 wherein each of the first and second silicon nitride layers has a thickness of 400 nm +/−20% and wherein the buried oxide layer has a thickness of 2-3 μm.

22. The switch of claim 16 wherein the first and second waveguide layers are made of a dielectric material having a refractive index within +/−20% of the refractive index of silicon nitride.

Assignees

• Huawei Tech Canada Co Ltd
• Governing Council Univ Toronto

Inventors

• Sacher Wesley David
• Poon Joyce Kai See

Classifications

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/125

  Bends, branchings or intersections · CPC title

• G02B6/122 Primary

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B2006/12061

  Silicon · CPC title

• G02B2006/12038

  Glass (SiO2 based materials) · CPC title