Plasma deposition process with removal of substrate tube

Patent metadata

Field	Value
Publication number	US-9816178-B2
Application number	US-201414902062-A
Country	US
Kind code	B2
Filing date	Jun 5, 2014
Priority date	Jul 1, 2013
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

The present invention relates to a method of removing a substrate tube from the deposited layer inside of said substrate tube. In other words, the present invention relates to a method for manufacturing a precursor for a primary preform for optical fibers by means of an internal plasma deposition process, which method comprises the steps of providing a hollow substrate tube; creating a first plasma reaction zone having first reaction conditions in the interior of said hollow substrate tube by means of electromagnetic radiation for effecting the deposition of non-vitrified silica layers on the inner surface of said hollow substrate tube, and subsequently creating a second plasma reaction zone having second reaction conditions in the interior of said hollow substrate tube by means of electromagnetic radiation for effecting the deposition of vitrified silica layers on the non-vitrified silica layers deposited in the previous step; and removing the hollow substrate tube from the vitrified silica layers and the non-vitrified silica layers to obtain a deposited tube.

First claim

The invention claimed is:

1. A method for manufacturing a precursor for a primary preform for optical fibres by means of an internal plasma deposition process, which method comprises the steps of:
i) providing a hollow substrate tube;
ii) creating a first plasma reaction zone having first reaction conditions in the interior of said hollow substrate tube by means of electromagnetic radiation for effecting the deposition of non-vitrified silica layers on the inner surface of said hollow substrate tube, and subsequently;
iii) creating a second plasma reaction zone having second reaction conditions in the interior of said hollow substrate tube by means of electromagnetic radiation for effecting the deposition of vitrified silica layers on the non-vitrified silica layers deposited in step ii);
iv) removing the hollow substrate tube from the vitrified silica layers deposited in step iii) and the non-vitrified silica layers deposited in step ii) to obtain a deposited tube.

2. The method according to claim 1 , comprising an additional step v) carried out after step iv), step v) being: subjecting the deposited tube obtained in step iv) to a collapsing treatment so as to form a primary preform.

3. The method according to claim 2 , comprising an additional step vi) carried out after step v), step vi) being: externally providing said primary preform of step v) with an additional amount of glass.

4. The method according to claim 1 , wherein during step iv) the substrate tube is removed mechanically.

5. The method according to claim 1 , wherein the first reaction conditions comprise a pressure of higher than 30 millibar.

6. The method according to claim 1 , wherein the first reaction conditions comprise a pressure of lower than 1000 millibar.

7. The method according to claim 1 , wherein the second reaction conditions comprise a pressure of between 1 and 25 millibar.

8. The method according to claim 1 , wherein as the substrate tube provided in step i) a non-quartz substrate tube is used.

9. The method according to claim 1 , wherein in step ii) between 1 and 500 non-vitrified silica layers are deposited.

10. The method according to claim 1 , wherein the non-vitrified silica layers each, independently, have a thickness between 1 and 5 micrometer.

11. The method according to claim 1 , wherein the non-vitrified silica layers that are deposited in total have a thickness between 1 and 1000 micrometer.

12. The method according to claim 1 , comprising the subsequent step of creating a plasma reaction zone having reaction conditions in the interior of said deposited tube by means of electromagnetic radiation for effecting the deposition of vitrified silica layers on inner surface of said deposited tube.

13. The method according to claim 1 , wherein the electromagnetic radiation used is microwaves.

14. The method according to claim 1 , comprising an additional step vi) carried out after step iv), step vi) being: externally providing said deposited tube of step iv) with an additional amount of glass.

15. The method according to claim 1 , wherein the first reaction conditions comprise a pressure of higher than 60 millibar.

16. The method according to claim 1 , wherein the first reaction conditions comprise a pressure of lower than 200 millibar.

17. The method according to claim 1 , wherein the second reaction conditions comprise a pressure of between 5 and 20 millibar.

18. The method according to claim 1 , wherein the second reaction conditions comprise a pressure of between 10 and 15 millibar.

19. The method according to claim 1 , wherein as the substrate tube provided in step i) an alumina substrate tube is used.

20. The method according to claim 1 , wherein as the substrate tube provided in step i) a glass substrate tube is used.

Assignees

• Draka Comteq Bv
• Draka Comteq Bv

Inventors

• Milicevic Igor
• Hartsuiker Johannes Antoon
• Van Stralen Mattheus Jacobus Nicolaas
• Krabshuis Gertjan

Classifications

• C23C16/402

  Silicon dioxide · CPC title

• C03B37/0183 Primary

  for plasma within a tube substrate · CPC title

• C23C16/01 Primary

  on temporary substrates, e.g. substrates subsequently removed by etching · CPC title

• C03B37/018 Primary

  by glass deposition on a glass substrate, e.g. by {inside-, modified-, plasma- or plasma modified-} chemical vapour deposition {[ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod} (C03B37/016 takes precedence; surface treatment of glass by coating with glass C03C17/02) · CPC title