Method and system for optoelectronics transceivers integrated on a CMOS chip

Patent metadata

Field	Value
Publication number	US-9813152-B2
Application number	US-24196108-A
Country	US
Kind code	B2
Filing date	Sep 30, 2008
Priority date	Jan 14, 2004
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

First claim

What is claimed is:

1. A method for processing signals, the method comprising:
in a CMOS chip comprising photonics devices and electronics devices that were fabricated using a CMOS process,
receiving optical signals from one or more optical fibers via optical couplers on a top surface of said CMOS chip;
converting said optical signals to electrical signals via one or more photodetectors integrated in said CMOS chip;
processing said electrical signals using circuitry in said CMOS chip;
receiving a continuous-wave (CW) optical signal from a laser source via optical couplers on said top surface of said CMOS chip;
modulating said received CW optical signal using one or more optical modulators integrated in said CMOS chip;
receiving electrical signals from circuitry in said CMOS chip;
driving said one or more optical modulators using said received electrical signals; and
communicating said modulated optical signal out of said top surface of said CMOS chip into one or more optical fibers via one or more optical couplers integrated in said CMOS chip.

2. The method according to claim 1 , comprising modulating said received CW optical signal using Mach-Zehnder modulators.

3. The method according to claim 1 , comprising modulating said received CW optical signal using ring modulators.

4. The method according to claim 1 , wherein said CMOS chip comprises a CMOS guard ring.

5. The method according to claim 1 , comprising communicating said received optical signals between devices on said CMOS chip via waveguides.

6. The method according to claim 1 , wherein said one or more photodetectors comprise germanium waveguide photodiodes.

7. The method according to claim 1 , wherein said wherein said one or more photodetectors comprise germanium waveguide avalanche photodiodes.

8. The method according to claim 1 , wherein said wherein said one or more photodetectors comprise heterojunction diodes.

9. The method according to claim 1 , comprising generating said CW optical signal using an edge-emitting semiconductor laser.

10. The method according to claim 1 , comprising generating said CW optical signal using a vertical-cavity surface emitting semiconductor laser.

11. The method according to claim 1 , wherein said laser source is bonded to said top surface of said CMOS chip.

12. A system for processing signals, the system comprising:
a CMOS chip comprising photonics devices and electronics devices that were fabricated in a CMOS process, wherein said CMOS chip comprises:
one or more optical couplers on a top surface of said CMOS chip and enabled to receive optical signals from one or more optical fibers;
one or more photodetectors integrated in said CMOS chip and enabled to convert said received optical signals to electrical signals;
one or more circuits integrated in said CMOS chip and enabled to process said electrical signals;
one or more optical couplers on said top surface of said CMOS chip and enabled to receive a continuous-wave (CW) optical signal from a laser source;
one or more optical modulators integrated in said CMOS chip and enabled to modulate said received CW optical signal;
one or more circuits integrated in said CMOS chip and enabled to receive electrical signals and drive said one or more optical modulators using said received electrical signals; and
one or more optical couplers integrated in said CMOS chip and enabled to communicate said modulated optical signal out of said top surface of said CMOS chip into one or more optical fibers.

13. The system according to claim 12 , wherein said optical modulators comprise Mach-Zehnder modulators.

14. The system according to claim 12 , wherein said optical modulators comprise ring modulators.

15. The system according to claim 12 , wherein said CMOS chip comprises a CMOS guard ring.

16. The system according to claim 12 , wherein said received optical signals are communicated between devices on said CMOS chip using waveguides.

17. The system according to claim 12 , wherein said one or more photodetectors comprise germanium waveguide photodiodes.

18. The system according to claim 12 , wherein said wherein said one or more photodetectors comprise germanium waveguide avalanche photodiodes.

19. The system according to claim 12 , wherein said wherein said one or more photodetectors comprise heterojunction diodes.

20. The system according to claim 12 , wherein said laser source is an edge-emitting semiconductor laser.

21. The system according to claim 12 , wherein said laser source is a vertical-cavity surface emitting semiconductor laser.

22. The system according to claim 12 , wherein said laser source is bonded to said top surface of said CMOS chip.

23. The method according to claim 1 , wherein said photonics devices that were fabricated in a CMOS process comprise said one or more optical couplers, said one or more photodetectors, and said one or more optical modulators.

24. The method according to claim 1 , wherein said one or more optical couplers comprise grating couplers.

25. The system according to claim 12 , wherein said photonics devices that were fabricated in a CMOS process comprise said one or more optical couplers, said one or more photodetectors, and said one or more optical modulators.

26. The system according to claim 12 , wherein said one or more optical couplers comprise grating couplers.

Assignees

• Pinguet Thierry
• Gloeckner Steffen
• Abdalla Sherif
• Mirsaidi Sina
• De Dobbelaere Peter
• Gunn Iii Lawrence C
• Luxtera Inc

Inventors

• Pinguet Thierry
• Gloeckner Steffen
• Abdalla Sherif
• Mirsaidi Sina
• De Dobbelaere Peter
• Gunn Iii Lawrence C

Classifications

• H04B10/25 Primary

  Arrangements specific to fibre transmission · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/43

  Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections · CPC title

• G02B6/124

  Geodesic lenses or integrated gratings · CPC title

• G02B6/4214

  the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device (G02B6/4246 takes precedence) · CPC title