Hybrid optical source with optical proximity coupling provided by an external reflector

Patent metadata

Field	Value
Publication number	US-9812842-B2
Application number	US-201615189598-A
Country	US
Kind code	B2
Filing date	Jun 22, 2016
Priority date	Apr 12, 2016
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

First claim

What is claimed is:

1. A hybrid optical source, comprising:
an optical gain chip including an optical gain material that provides an optical signal;
an optical reflector chip including an optical reflector that is optically coupled to the optical gain chip to reflect the optical signal; and
a semiconductor-on-insulator (SOI) chip optically coupled to the optical reflector, wherein the SOI chip includes a semiconductor layer having a planarized surface facing the semiconductor reflector, wherein the semiconductor layer includes,
an optical coupler to redirect the optical signal to and from the planarized surface of the semiconductor layer, and
an optical waveguide to convey the optical signal from the optical coupler; and

wherein when the optical gain chip, the optical reflector chip and the SOI chip are assembled, a height of the optical gain material in the optical gain chip is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector in the optical reflector chip is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material reflects off of the optical reflector and into the optical coupler.

2. The hybrid optical source of claim 1 , wherein the optical gain material comprises a III-V semiconductor.

3. The hybrid optical source of claim 1 , wherein the optical gain material comprises a distributed feedback (DFB) laser.

4. The hybrid optical source of claim 1 , wherein the optical gain material comprises a semiconductor optical amplifier.

5. The hybrid optical source of claim 4 , wherein the semiconductor layer includes an internal reflector that reflects a wavelength in the optical signal, so that the semiconductor optical amplifier, the optical reflector, the optical coupler, the optical waveguide and the internal reflector define an optical cavity in the hybrid optical source.

6. The hybrid optical source of claim 1 , wherein a wavelength reflected by the optical reflector is tunable.

7. The hybrid optical source of claim 1 , wherein the optical reflector comprises a mirror.

8. The hybrid optical source of claim 7 , wherein the mirror is etched into a semiconductor substrate.

9. The hybrid optical source of claim 8 , wherein the semiconductor substrate includes silicon.

10. The hybrid optical source of claim 1 , wherein a distance between the optical reflector and the planarized surface of the semiconductor layer is less than a predefined length so that divergence of the optical signal is reduced during optical coupling between the optical reflector and the optical coupler.

11. The hybrid optical source of claim 1 , wherein the optical coupler comprises a diffraction grating.

12. A system, comprising:
a processor;
memory; and
a hybrid optical source, wherein the hybrid optical source includes:
an optical gain chip including an optical gain material that provides an optical signal;
an optical reflector chip including an optical reflector that is optically coupled to the optical gain chip to reflect the optical signal; and
a semiconductor-on-insulator (SOI) chip optically coupled to the optical reflector, wherein the SOI chip includes a semiconductor layer having a planarized surface facing the semiconductor reflector, wherein the semiconductor layer includes:
an optical coupler to redirect the optical signal to and from the planarized surface of the semiconductor layer, and
an optical waveguide to convey the optical signal from the optical coupler; and

wherein when the optical gain chip, the optical reflector chip and the SOI chip are assembled, a height of the optical gain material in the optical gain chip is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector in the optical reflector chip is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material reflects off of the optical reflector and into the optical coupler.

13. The system of claim 12 , wherein the optical gain material comprises a III-V semiconductor.

14. The system of claim 12 , wherein the optical gain material comprises one of:
a distributed feedback (DFB) laser; and
a multi-wavelength (comb) laser.

15. The system of claim 12 , wherein the optical gain material comprises a semiconductor optical amplifier.

16. The system of claim 15 , wherein the semiconductor layer includes an internal reflector that reflects a wavelength in the optical signal, so that the semiconductor optical amplifier, the optical reflector, the optical coupler, the optical waveguide and the internal reflector define an optical cavity in the hybrid optical source.

17. A method for assembling a hybrid optical source, comprising:
obtaining a semiconductor-on-insulator (SOI) chip, wherein the SOI chip includes a semiconductor layer having a planarized surface, wherein the semiconductor layer includes an optical coupler to redirect an optical signal to and from the planarized surface of the semiconductor layer, and an optical waveguide to convey the optical signal from the optical coupler;
locating an optical gain chip on the SOI chip, wherein the optical gain chip includes an optical gain material that provides the optical signal, wherein when the optical gain chip is located on the SOI chip, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer of the SOI chip; and
locating an optical reflector chip on the SOI chip, wherein the optical reflector chip includes an optical reflector, and wherein when the optical reflector chip is located on the SOI chip, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler in the semiconductor layer, so that the optical signal emanating from the optical gain material reflects off of the optical reflector and into the optical coupler.

18. The method of claim 17 , wherein the optical reflector is aligned with the optical coupler by performing an active alignment operation, which comprises:
powering the optical gain chip so that the optical gain material produces the optical signal, which reflects off of the optical reflector into the optical coupler;
adjusting a location of the optical reflector chip in a direction parallel to the planarized surface of the semiconductor layer while measuring a strength of an optical signal received by the optical coupler to maximize a strength of the received optical signal; and
after adjusting the location of the optical reflector chip, bonding the optical reflector chip to the SOI chip.

19. The method of claim 17 , wherein the optical reflector is aligned with the optical coupler by performing a passive alignment operation, which involves aligning one or more features on the optical reflector chip with one or more features on the SOI chip.

20. The method of claim 17 , wherein prior to assembling the hybrid optical source, the method comprises fabricating the optical reflector chip, by:
obtaining a wafer comprised of silicon;
performing an anisotropic wet chemical etching operation that uses a mask to form one or more V-grooves on the wafer;
applying a metal coating to surfaces of the V-grooves to form reflectors;
thinning the wafer; and
dicing

Assignees

• Oracle Int Corp

Inventors

• Shubin Ivan
• Zheng Xuezhe
• Yao Jin
• Lee Jin-Hyoung
• Bovington Jock T
• Lin Shiyun
• Krishnamoorthy Ashok V

Classifications

• H01S5/1014

  Tapered waveguide, e.g. spotsize converter (H01S5/1064 takes precedence) · CPC title

• H01S5/021

  Silicon based substrates · CPC title

• H01S5/0228

  Electricity · mapped topic

• H01S5/026 Primary

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H01S5/1092

  Multi-wavelength lasing · CPC title