Perylene-based semiconductors

Patent metadata

Field	Value
Publication number	US-9812645-B2
Application number	US-201615043956-A
Country	US
Kind code	B2
Filing date	Feb 15, 2016
Priority date	Feb 13, 2015
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

The present invention relates to new semiconductor materials prepared from perylene-based compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

First claim

What is claimed is:

1. A compound of formula:

wherein:
W 1 and W 2 independently are selected from the group consisting of —(CR a R b ) m —, —(SiR c R d )—, and Ar;
X 1 , X 2 , X 3 , X 4 , X 5 , X 6 , X 7 , and X 8 independently are selected from the group consisting of H, halogen, CN, and OR e , provided at least one of X 1 , X 2 , X 3 , X 4 , X 5 , X 6 , X 7 , and X 8 is not H;
Ar is a divalent aryl or heteroaryl group selected from the group consisting of phenyl, thienyl, and furyl;
R a and R b independently are selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group;
R c and R d independently are selected from the group consisting of H, a C 1-20 alkyl group, and a C 1-20 haloalkyl group;
R e is selected from the group consisting of H, a C 1-20 alkyl group, a C 2-20 alkenyl group, and a C 1-20 haloalkyl group;
R 1 , R 1′ , R 2 , and R 2′ independently are selected from the group consisting of H, a linear C 1-40 alkyl group, a linear C 2-40 alkenyl group, and a linear C 1-40 haloalkyl group; and
m is 0, 1, 2, 3, or 4.

2. The compound of claim 1 , wherein the compound is represented by the formula:

wherein n′ is 2, 4, 6 or 8; and R 1 , R 1′ , R 2 , R 2′ , W 1 , and W 2 are as defined in claim 1 .

3. The compound of claim 1 , wherein the compound is represented by the formula:

wherein two of X 1 , X 2 , X 3 , X 4 , X 5 , X 6 , and X 8 are CN, and the other six of X 1 , X 2 , X 3 , X 4 , X 5 , X 6 , X 7 , and X 8 are H.

4. The compound of claim 3 , wherein X 2 and X 4 are CN, and X 1 , X 3 , X 5 , X 6 , X 7 , and X 8 are H.

5. The compound of claim 3 , wherein X 6 and X 8 are CN, and X 1 , X 2 , X 3 , X 4 , X 5 , and X 7 are H.

6. The compound of claim 3 , wherein X 1 and X 3 are CN, and X 2 , X 4 , X 5 , X 6 , X 7 , and X 8 are H.

7. The compound of claim 3 , wherein X 5 and X 7 are CN, and X 1 , X 2 , X 3 , X 4 , X 6 , and X 8 are H.

8. The compound of claim 3 , wherein X 5 and X 8 are CN, and X 1 , X 2 , X 3 , X 4 , X 6 , and X 7 are H.

9. The compound of claim 1 , wherein the compound is represented by a formula selected from the group consisting of:

10. The compound of claim 1 , wherein R 1 is different from R 1′ , and R 2 is different from R 2′ .

11. The compound of claim 1 , wherein R 1′ and R 2′ are selected from the group consisting of consisting of a linear C 1-6 alkyl group, a linear C 2-6 alkenyl group, and a linear C 1-6 haloalkyl group; and R 1 and R 2 are selected from the group consisting of a linear C 3-40 alkyl group, a linear C 4-40 alkenyl group, and a linear C 3-40 haloalkyl group.

12. The compound of claim 1 , wherein R 1′ and R 2′ are selected from the group consisting of CH 3 , CF 3 , C 2 H 5 , CH 2 CF 3 , CF 2 CH 3 , and C 2 F 5 ; and R 1 and R 2 are selected from the group consisting of a linear C 3-20 alkyl group, a linear C 4-20 alkenyl group, and a linear C 3-20 haloalkyl group.

13. A thin film semiconductor comprising a compound of claim 1 .

14. A composite comprising a substrate and the thin film semiconductor of claim 13 deposited on the substrate.

15. An electronic device, an optical device, or an optoelectronic device comprising the thin film semiconductor of claim 13 .

16. A field effect transistor device comprising a source electrode, a drain electrode, a gate electrode, and the thin film semiconductor of claim 13 in contact with a dielectric material.

17. The device of claim 16 , wherein the field effect transistor has a structure selected from the group consisting of a top-gate bottom-contact structure, a bottom-gate top-contact structure, a top-gate top-contact structure, and a bottom-gate bottom-contact structure.

18. The device of claim 16 , wherein the dielectric material comprises an organic dielectric material.

19. The device of claim 16 , wherein the dielectric material comprises an inorganic dielectric material or a hybrid organic/inorganic dielectric material.

20. An optoelectronic device for producing an image, the optoelectronic device comprising a plurality of field effect transistors interconnected to each other and deposited on a substrate, such field effect transistors each comprising a thin film semiconductor comprising a compound of claim 1 , a source electrode, a drain electrode, a gate electrode, and a dielectric material.

Assignees

• Flexterra Inc

Inventors

• Facchetti Antonio
• Denti Mitchell

Classifications

• C07D487/06 Primary

  Peri-condensed systems · CPC title

• H01L51/4253

  Electricity · mapped topic

• H01L51/0053 Primary

  Electricity · mapped topic

• H01L51/5012

  Electricity · mapped topic

• H01L51/0558

  Electricity · mapped topic