Solid-state imaging device and electronic apparatus with improved storage portion
US-9490373-B2 · Nov 8, 2016 · US
US9812592B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9812592-B2 |
| Application number | US-201213725580-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 21, 2012 |
| Priority date | Dec 21, 2012 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina includes the P-type and N-type doped regions. A metal foil is attached to the backside of the silicon lamina. The metal foil may be used advantageously as a built-in carrier for handling the silicon lamina during processing of a frontside of the silicon lamina. Another embodiment relates to a solar cell that includes a silicon lamina having P-type and N-type doped regions on the backside. A metal foil is adhered to the backside of the lamina, and there are contacts formed between the metal foil and the doped regions. Other embodiments, aspects and features are also disclosed.
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a solar cell, the method comprising: cleaving a silicon lamina from a silicon substrate, wherein a backside of the silicon lamina includes P-type and N-type doped regions; and positioning a metal foil between a secondary substrate and the backside of the silicon lamina; and forming contacts between the metal foil and the doped regions by transmitting a pulsed laser through the secondary substrate. 2. The method of claim 1 , wherein an extended area of the metal foil extends beyond a perimeter of the silicon lamina, further comprising: using the metal foil as an integrated carrier for handling the silicon lamina. 3. The method of claim 1 , further comprising: forming a first set of contacts between the metal foil and the P-type doped regions; and forming a second set of contacts between the metal foil and the N-type doped regions. 4. The method of claim 1 , further comprising: forming a finger separation pattern in the metal foil. 5. The method of claim 4 , wherein the finger separation pattern is pre-formed in the metal foil prior to attachment to the backside. 6. The method of claim 5 , further comprising: attaching the metal foil to a secondary substrate prior to attachment to the backside, wherein the secondary substrate is transparent to a laser light. 7. The method of claim 1 , wherein the metal foil is attached to the backside using an adhesive layer. 8. The method of claim 1 , wherein the metal foil is attached to the backside at an array of contact spots between the metal foil and the backside of the silicon substrate, and wherein the contact spots are formed by spot melting of the metal foil. 9. The method of claim 1 , wherein the metal foil comprises aluminum. 10. The method of claim 1 , further comprising: texturing and passivating a frontside of the silicon lamina while using the metal foil as the carrier for handling the silicon lamina; and encapsulating the frontside of the silicon lamina.
Monocrystalline silicon PV cells · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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