Metal-foil-assisted fabrication of thin-silicon solar cell

US9812592B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9812592-B2
Application numberUS-201213725580-A
CountryUS
Kind codeB2
Filing dateDec 21, 2012
Priority dateDec 21, 2012
Publication dateNov 7, 2017
Grant dateNov 7, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina includes the P-type and N-type doped regions. A metal foil is attached to the backside of the silicon lamina. The metal foil may be used advantageously as a built-in carrier for handling the silicon lamina during processing of a frontside of the silicon lamina. Another embodiment relates to a solar cell that includes a silicon lamina having P-type and N-type doped regions on the backside. A metal foil is adhered to the backside of the lamina, and there are contacts formed between the metal foil and the doped regions. Other embodiments, aspects and features are also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of fabricating a solar cell, the method comprising: cleaving a silicon lamina from a silicon substrate, wherein a backside of the silicon lamina includes P-type and N-type doped regions; and positioning a metal foil between a secondary substrate and the backside of the silicon lamina; and forming contacts between the metal foil and the doped regions by transmitting a pulsed laser through the secondary substrate. 2. The method of claim 1 , wherein an extended area of the metal foil extends beyond a perimeter of the silicon lamina, further comprising: using the metal foil as an integrated carrier for handling the silicon lamina. 3. The method of claim 1 , further comprising: forming a first set of contacts between the metal foil and the P-type doped regions; and forming a second set of contacts between the metal foil and the N-type doped regions. 4. The method of claim 1 , further comprising: forming a finger separation pattern in the metal foil. 5. The method of claim 4 , wherein the finger separation pattern is pre-formed in the metal foil prior to attachment to the backside. 6. The method of claim 5 , further comprising: attaching the metal foil to a secondary substrate prior to attachment to the backside, wherein the secondary substrate is transparent to a laser light. 7. The method of claim 1 , wherein the metal foil is attached to the backside using an adhesive layer. 8. The method of claim 1 , wherein the metal foil is attached to the backside at an array of contact spots between the metal foil and the backside of the silicon substrate, and wherein the contact spots are formed by spot melting of the metal foil. 9. The method of claim 1 , wherein the metal foil comprises aluminum. 10. The method of claim 1 , further comprising: texturing and passivating a frontside of the silicon lamina while using the metal foil as the carrier for handling the silicon lamina; and encapsulating the frontside of the silicon lamina.

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What does patent US9812592B2 cover?
One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate. The backside of the silicon lamina includes the P-type and N-type doped regions. A metal foil is attached to the backside of the silicon lamina. The metal foil may be used advantageously as a built-in carrier for handling the silicon lamina during processing of a frontside of …
Who is the assignee on this patent?
Rim Seung Bum, Harley Gabriel, Sunpower Corp
What technology area does this patent fall under?
Primary CPC classification H01L31/0216. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 07 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).