Hybrid bipolar junction transistor
US-2015357386-A1 · Dec 10, 2015 · US
Hybrid bipolar junction transistor
US9812508B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9812508-B2 |
| Application number | US-201615361471-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2016 |
| Priority date | Feb 19, 2014 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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- Title
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Abstract
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Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising obtaining a bipolar junction transistor including a doped crystalline inorganic semiconductor layer and emitter, base and collector contact structures operatively associated with the crystalline inorganic semiconductor layer, the emitter contact structure configured for transporting charge carriers having a first charge type into the inorganic semiconductor layer and suppressing diffusion of charge carriers having a second charge type opposite from the first charge type from the inorganic semiconductor layer, the emitter contact structure including a first organic semiconductor carrier transport layer for transporting the charge carriers having the first type; causing diffusion of charge carriers having the first charge type into the inorganic semiconductor layer from the emitter contact structure; within the emitter contact structure, suppressing diffusion of charge carriers having the second charge type from the inorganic semiconductor layer, and causing the bipolar junction transistor to provide electrical current to an electronic device. 2. The method of claim 1 , wherein the electronic device is an organic light emitting diode, and wherein the step of causing the bipolar junction transistor to provide electrical current to the electronic device further includes causing a switching thin film transistor to send an electrical signal to the bipolar junction transistor. 3. The method of claim 1 , wherein the emitter contact structure includes an emitter electrode operatively associated with the first organic semiconductor carrier transport layer, the emitter electrode and first organic semiconductor transport layer being configured for transporting holes into the inorganic semiconductor layer, wherein: causing diffusion of charge carriers having the first charge type into the inorganic semiconductor layer includes causing diffusion of holes into the inorganic semiconductor layer, and suppressing diffusion of charge carriers having the second charge type includes suppressing diffusion of electrons from the inorganic semiconductor layer towards the emitter electrode.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9812508B2 cover?
- Bipolar junction transistors including inorganic channels and organic emitter junctions are used in some applications for forming high resolution active matrix displays. Arrays of such bipolar junction transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L27/286. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 07 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).