Semiconductor Device having Voids and Method of Forming Same
US-2015137378-A1 · May 21, 2015 · US
US9812446B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9812446-B2 |
| Application number | US-201615085534-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2016 |
| Priority date | Mar 30, 2016 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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An electronics apparatus including a first substrate having a first surface and a second surface, a first switch connected to a second switch and soldered in series on the first surface of the first substrate creating a connection to allow switching between the first switch and the second switch at high frequency, an insulation having a third surface attached to the second surface of the first substrate, and a second substrate having a pocket of low permittivity located between the first switch and the second switch on a fourth surface of the insulation, the fourth surface being opposite to the third surface where the first switch and the second switch are located.
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What is claimed is: 1. An electronics apparatus comprising: a first substrate including a first surface and a second surface; a first switch connected to a second switch and soldered in series with the first switch on the first surface of the first substrate creating an electrical connection to allow high frequency switching between the first switch and the second switch; insulation including a first surface attached to the second surface of the first substrate; and a second substrate having a pocket of low permittivity material located between the first switch and the second switch on a second surface of the insulation, the second surface of the insulation being opposite to the first surface of the insulation where the first switch and the second switch are located. 2. The apparatus according to claim 1 , wherein the pocket of low permittivity material formed of an air pocket is completely enclosed by the insulation and the second substrate. 3. The apparatus according to claim 2 , wherein the air pocket is substantially rectangular in shape located directly below the electrical connection. 4. The apparatus according to claim 2 , wherein the air pocket extends along the length of the second substrate. 5. The apparatus according to claim 2 , wherein a first capacitance is formed between the first substrate and the second substrate and a second capacitance corresponding to the air pocket is formed in series with the first capacitance causing a reduction in an overall capacitance of the electronics apparatus. 6. The apparatus according to claim 1 , wherein the first substrate is made of copper. 7. The apparatus according to claim 1 , wherein the second substrate is made of copper. 8. The apparatus according to claim 1 , wherein the second substrate is soldered to a third substrate to transfer heat generated during operation. 9. The apparatus according to claim 1 , wherein the insulation has uniform thickness under the first switch and the second switch.
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between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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Soldering or alloying · CPC title
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