SCRs with checker board layouts

Patent metadata

Field	Value
Publication number	US-9812436-B2
Application number	US-201514844272-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Oct 2, 2013
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

An Electro-Static Discharge (ESD) protection circuit includes a plurality of groups of p-type heavily doped semiconductor strips (p+ strips) and a plurality of groups of n-type heavily doped semiconductor strips (n+ strips) forming an array having a plurality of rows and columns. In each of the rows and the columns, the plurality of groups of p+ strips and the plurality of groups of n+ strips are allocated in an alternating layout. The ESD protection circuit further includes a plurality of gate stacks, each including a first edge aligned to an edge of a group in the plurality of groups of p+ strips, and a second edge aligned to an edge of a group in the plurality of groups of n+ strips.

First claim

What is claimed is:

1. An Electro-Static Discharge (ESD) protection circuit comprising:
a first semiconductor strip in a first well, the first semiconductor strip extending along a first row direction, the first semiconductor strip having a first p-doped portion and a first n-doped portion;
a second semiconductor strip in a second well, the first well and the second well being physically separated and having a same conductivity type, the first well and the second well being in a third well having a different conductivity type, the second semiconductor strip extending along a second row direction parallel to the first row direction, the second semiconductor strip having a second p-doped portion and a second n-doped portion, the first p-doped portion and the second n-doped portion being aligned along a first column direction, the first n-doped portion and the second p-doped portion being aligned along a second column direction parallel to the first column direction; and
a conductor electrically connecting the first n-doped portion to the second p-doped portion.

2. The ESD protection circuit of claim 1 further comprising:
a first gate stack on the first semiconductor strip and between first p-doped portion and the first n-doped portion; and
a second gate stack on the first semiconductor strip and between second p-doped portion and the second n-doped portion.

3. The ESD protection circuit of claim 1 further comprising:
an input/output node electrically connected to the first p-doped portion; and
a Vss node electrically connected to the second n-doped portion.

4. The ESD protection circuit of claim 1 , wherein a p-n junction between the first p-doped portion and the first n-doped portion forms a first diode, and a p-n junction between the second p-doped portion and the second n-doped portion forms a second diode.

5. The ESD protection circuit of claim 1 , wherein:
the first semiconductor strip has a third doped portion, and
the second semiconductor strip has a fourth doped portion, the third doped portion and the fourth doped portion being oppositely doped, the third doped portion and the fourth doped portion being aligned along a third column direction parallel to the first column direction, no diode string being formed between the third doped portion and the fourth doped portion.

6. The ESD protection circuit of claim 1 , wherein the first well and the second well are each an n-type doped well, and the third well is a p-type doped well.

7. An Electro-Static Discharge (ESD) protection circuit comprising:
a substrate having a first doped region of a first dopant type and having a second doped region in the first doped region, a third doped region in the first doped region, a fourth doped region in the first doped region, and a fifth doped region in the first doped region, each of the second doped region, the third doped region, the fourth doped region, and the fifth doped region being of a second dopant type opposite from the first dopant type, the second doped region, the third doped region, the fourth doped region, and the fifth doped region being physically separated from each other, the first dopant type being N type or P type, the second dopant type being N type or P type;
a first semiconductor strip on the second doped region, the first semiconductor strip having a sixth doped region of a third dopant type, the third dopant type being N type or P type;
a second semiconductor strip on the third doped region, the second semiconductor strip having a seventh doped region of a fourth dopant type opposite from the third dopant type, the fourth dopant type being N type or P type;
a third semiconductor strip on the fourth doped region, the third semiconductor strip having an eighth doped region of the third dopant type;
a fourth semiconductor strip on the fifth doped region, the fourth semiconductor strip having a ninth doped region of the fourth dopant type; and
a first electrical connection connecting the seventh doped region of the second semiconductor strip to the eighth doped region of the third semiconductor strip.

8. The ESD protection circuit of claim 7 further comprising:
an input/output node electrically connected to the sixth doped region; and
a Vss node electrically connected to the ninth doped region.

9. The ESD protection circuit of claim 7 , wherein the sixth doped region, the seventh doped region, the eighth doped region, and the ninth doped region are aligned along a direction perpendicular to respective longitudinal directions of the first semiconductor strip, the second semiconductor strip, the third semiconductor strip, and the fourth semiconductor strip.

10. The ESD protection circuit of claim 7 , wherein the sixth doped region, the seventh doped region, the eighth doped region, and the ninth doped region do not form a portion of a diode string.

11. The ESD protection circuit of claim 7 , wherein:
the first semiconductor strip has a tenth doped region of the fourth dopant type, a junction between the sixth doped region and the tenth doped region being a junction of a first diode,
the second semiconductor strip has an eleventh doped region of the third dopant type, a junction between the seventh doped region and the eleventh doped region being a junction of a second diode,
the third semiconductor strip has a twelfth doped region of the fourth dopant type, a junction between the eighth doped region and the twelfth doped region being a junction of a third diode, and
the fourth semiconductor strip has a thirteenth doped region of the third dopant type, a junction between the ninth doped region and the thirteenth doped region being a junction of a fourth diode, and further comprising:
a second electrical connection connecting the tenth doped region of the first semiconductor strip to the eleventh doped region of the second semiconductor strip; and
a third electrical connection connecting the twelfth doped region of the third semiconductor strip to the thirteenth doped region of the fourth semiconductor strip.

12. The ESD protection circuit of claim 11 , wherein:
the sixth doped region, the seventh doped region, the eighth doped region, and the ninth doped region are aligned along a first direction perpendicular to respective longitudinal directions of the first semiconductor strip, the second semiconductor strip, the third semiconductor strip, and the fourth semiconductor strip, and
the tenth doped region, the eleventh doped region, the twelfth doped region, and the thirteenth doped region are aligned along a second direction parallel to the first direction.

13. The ESD protection circuit of claim 7 , wherein each of the first dopant type and the third dopant type is a p-type, and each of the second dopant type and the fourth dopant type is an n-type.

14. A circuit comprising:
an Electro-Static Discharge (ESD) protection circuit comprising:
a Silicon-Controlled Rectifier (SCR)/diode-string combination unit electrically coupled between a first node and a second node, the SCR/diode-string combination unit comprising:
a first doped region and a second doped region in a first semiconductor strip, the first doped region and the second doped region being doped opposite dopant types, a p-n junction of a first diode being formed between the first doped region and the second doped region, the first semiconductor strip being in a first doped well region,
a third doped region and a fourth doped region in a second semiconductor strip, the third doped region and the fourth doped region being doped opposite dopant types, a p-n junction of a second diode being formed between the third doped region and the four

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Su Yu-Ti
• Lin Wun-Jie
• Yang Han-Jen
• Cheng Shui-Ming
• Song Ming-Hsiang

Classifications

• H01L29/7436

  Electricity · mapped topic

• H01L27/0248 Primary

  Electricity · mapped topic

• H01L27/0814

  Electricity · mapped topic

• H01L27/0262

  Electricity · mapped topic

• H01L27/0647

  Electricity · mapped topic