Composite substrate, semiconductor device, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9812345-B2
Application number	US-201514825715-A
Country	US
Kind code	B2
Filing date	Aug 13, 2015
Priority date	Feb 19, 2013
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14 a and 14 b made of the same material and bonded together with a strength that allows the first and second substrates 14 a and 14 b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14 a opposite a surface thereof bonded to the second substrate 14 b.

First claim

What is claimed is:

1. A composite substrate including a semiconductor substrate and an insulating support substrate that are laminated together,
wherein the support substrate includes first and second substrates made of the same insulating material and bonded together with a strength that allows the first and second substrates to be separated from each other with a blade, and the semiconductor substrate is laminated on a surface of the first substrate opposite a surface thereof bonded to the second substrate.

2. The composite substrate according to claim 1 , wherein the material for the first and second substrates is one selected from the group consisting of silicon, sapphire, alumina, silicon nitride, aluminum nitride, and silicon carbide.

3. The composite substrate according to claim 1 , wherein the material for the first and second substrates is transparent alumina.

4. The composite substrate according to claim 1 , wherein the strength that allows the first and second substrates to be separated from each other with a blade is 0.05 to 0.6 J/m 2 as expressed in binding energy per unit area of the first and second substrates.

5. A method for manufacturing a semiconductor device including the steps of:
(a) providing the composite substrate according to claim 1 ;
(b) forming a CMOS semiconductor structure on the semiconductor substrate of the composite substrate;
(c) separating and removing the second substrate from the first substrate with a blade; and
(d) dicing the composite substrate to obtain a semiconductor device.

6. The method for manufacturing a semiconductor device according to claim 5 , wherein the step (a) comprises bonding together the first and second substrates with a strength that allows the first and second substrates to be separated from each other with a blade to fabricate the support substrate and then bonding the support substrate to the semiconductor substrate.

7. The semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 5 .

Assignees

• Ngk Insulators Ltd

Inventors

• Ide Akiyoshi
• Takagaki Tatsuro
• Miyazawa Sugio
• Hori Yuji
• Tai Tomoyoshi
• Hattori Ryosuke

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P72/74 Primary

  using temporarily an auxiliary support · CPC title

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title

• B32B7/12

  using interposed adhesives or interposed materials with bonding properties · CPC title

• H03H9/02574

  of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate · CPC title